Dr. Biswanath Senapati
Dr. Biswanath Senapati
IBM, Global Foundries Inc., Austriamicrosystems AG, IHP, IIT-Kharagpur
Verified email at ibm.com - Homepage
Cited by
Cited by
A flexible, low-cost, high performance SiGe: C BiCMOS process with a one-mask HBT module
D Knoll, KE Ehwald, B Heinemann, A Fox, K Blum, H Rucker, ...
Digest. International Electron Devices Meeting,, 783-786, 2002
A 7nm CMOS technology platform for mobile and high performance compute application
S Narasimha, B Jagannathan, A Ogino, D Jaeger, B Greene, C Sheraw, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2017
A modular, low-cost SiGe: C BiCMOS process featuring high-f/sub T/and high BV/sub CEO/transistors
D Knoll, B Heinemann, R Barth, K Blum, J Borngraber, J Drews, ...
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 …, 2004
Advanced technique for broadband on-wafer RF device characterization
RF Scholz, F Korndorfer, B Senapati, A Rumiantsev
ARFTG Microwave Measurements Conference-Spring, 63rd, 83-90, 2004
A two mask complementary LDMOS module integrated in a 0.25/spl mu/m SiGe: C BiCMOS platform
KE Ehwald, A Fischer, F Fuernhammer, W Winkler, B Senapati, R Barth, ...
Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat …, 2004
Advanced SPICE modelling of SiGe HBTs using VBIC model
B Senapati, CK Maiti
IEE Proceedings-Circuits, Devices and Systems 149 (2), 129-135, 2002
High performance SiGe: C HBTs using atomic layer base doping
B Tillack, Y Yamamoto, D Knoll, B Heinemann, P Schley, B Senapati, ...
Applied surface science 224 (1-4), 55-58, 2004
Silicon heterostructure devices for RF wireless communication
B Senapati, CK Maiti, NB Chakrabarti
VLSI Design 2000. Wireless and Digital Imaging in the Millennium …, 2000
Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained- layers
B Senapati, SK Samanta, S Maikap, LK Bera, CK Maiti
Applied Physics Letters 77 (12), 1840-1842, 2000
High voltage MOSFET modeling
E Seebacher, K Molnar, W Posch, B Senapati, A Steinmair, W Pflanzl
Compact Modeling: Principles, Techniques and Applications, 105-136, 2010
A low-cost SiGe: C BiCMOS technology with embedded flash memory and complementary LDMOS module
D Knoll, A Fox, KE Ehwald, B Heinemann, R Barth, A Fischer, H Rucker, ...
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 …, 2005
Challenges of analog and I/O scaling in 10nm SoC technology and beyond
A Wei, J Singh, G Bouche, M Zaleski, R Augur, B Senapati, J Stephens, ...
2014 IEEE International Electron Devices Meeting, 18.3. 1-18.3. 4, 2014
Symmetrical lateral bipolar junction transistor and use of same in characterizing and protecting transistors
B Senapati, J Singh
US Patent 9,966,459, 2018
Implementation of a scalable VBIC model for SiGe: C HBTs
A Chakravorty, RF Scholz, D Knoll, A Fox, B Senapati, CK Maiti
Solid-state electronics 50 (3), 399-407, 2006
Accurate modeling of low-cost SiGe: C-HBTs using adaptive neuro-fuzzy inference system
A Chakravorty, RF Scholz, B Senapati, D Knoll, A Fox, R Garg, CK Maiti
Materials science in semiconductor processing 8 (1-3), 307-311, 2005
Design of active inductors in SiGe/SiGe: C processes for RF applications
A Chakravorty, RF Scholz, B Senapati, R Garg, CK Maiti
International Journal of RF and Microwave Computer‐Aided Engineering: Co …, 2007
Modelling of strained silicon-germanium material parameters for device simulation
B Senapati
IETE Journal of Research 53 (3), 215-236, 2007
Analog Compact Modeling for a 20-120V HV CMOS Technology
BS E. Seebacher, W. Posch, K. Molnar, A. Steinmair
NSTI-Nanotech 3, 720-723, 2006
High performance MOS varactor SPICE model
B Senapati, K Ehwald, W Winkler, F Furnhammer
Electronics Letters 38 (23), 1416-1417, 2002
Effects of O2/N2O-plasma treatment on nitride films on strained Si
LK Bera, B Senapati, S Maikap, CK Maiti
Solid-State Electronics 44 (9), 1533-1536, 2000
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