| Synthesis of nanometre-thick MoO 3 sheets K Kalantar-Zadeh, J Tang, M Wang, KL Wang, A Shailos, K Galatsis, ... Nanoscale 2 (3), 429-433, 2010 | 311 | 2010 |
| A stacked memory device on logic 3D technology for ultra-high-density data storage J Kim, AJ Hong, SM Kim, KS Shin, EB Song, Y Hwang, F Xiu, K Galatsis, ... Nanotechnology 22 (25), 254006, 2011 | 290 | 2011 |
| Comparison of single and binary oxide MoO3, TiO2 and WO3 sol–gel gas sensors K Galatsis, YX Li, W Wlodarski, E Comini, G Sberveglieri, C Cantalini, ... Sensors and Actuators B: Chemical 83 (1-3), 276-280, 2002 | 251 | 2002 |
| Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ... Journal of Applied Physics 109 (7), 2011 | 244 | 2011 |
| Fully printed separated carbon nanotube thin film transistor circuits and its application in organic light emitting diode control P Chen, Y Fu, R Aminirad, C Wang, J Zhang, K Wang, K Galatsis, C Zhou Nano letters 11 (12), 5301-5308, 2011 | 237 | 2011 |
| Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ... Applied Physics Letters 98 (11), 2011 | 226 | 2011 |
| Gas sensing properties of p-type semiconducting Cr-doped TiO2 thin films Y Li, W Wlodarski, K Galatsis, SH Moslih, J Cole, S Russo, N Rockelmann Sensors and Actuators B: Chemical 83 (1-3), 160-163, 2002 | 204 | 2002 |
| Investigation of the oxygen gas sensing performance of Ga2O3 thin films with different dopants Y Li, A Trinchi, W Wlodarski, K Galatsis, K Kalantar-Zadeh Sensors and Actuators B: Chemical 93 (1-3), 431-434, 2003 | 201 | 2003 |
| p-and n-type Fe-doped SnO2 gas sensors fabricated by the mechanochemical processing technique K Galatsis, L Cukrov, W Wlodarski, P McCormick, K Kalantar-Zadeh, ... Sensors and actuators B: chemical 93 (1-3), 562-565, 2003 | 174 | 2003 |
| Sol–gel prepared MoO3–WO3 thin-films for O2 gas sensing K Galatsis, YX Li, W Wlodarski, K Kalantar-Zadeh Sensors and Actuators B: Chemical 77 (1-2), 478-483, 2001 | 167 | 2001 |
| Patterning and templating for nanoelectronics K Galatsis, KL Wang, M Ozkan, CS Ozkan, Y Huang, JP Chang, ... Advanced Materials 22 (6), 769-778, 2010 | 157 | 2010 |
| Aligned carbon nanotube synaptic transistors for large-scale neuromorphic computing I Sanchez Esqueda, X Yan, C Rutherglen, A Kane, T Cain, P Marsh, Q Liu, ... ACS nano 12 (7), 7352-7361, 2018 | 153 | 2018 |
| High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy Z Zeng, PK Amiri, IN Krivorotov, H Zhao, G Finocchio, JP Wang, JA Katine, ... ACS nano 6 (7), 6115-6121, 2012 | 153 | 2012 |
| Semiconductor MoO3–TiO2 thin film gas sensors K Galatsis, YX Li, W Wlodarski, E Comini, G Faglia, G Sberveglieri Sensors and Actuators B: Chemical 77 (1-2), 472-477, 2001 | 144 | 2001 |
| Gas sensing properties of nanosized tin oxide synthesised by mechanochemical processing LM Cukrov, PG McCormick, K Galatsis, W Wlodarski Sensors and Actuators B: Chemical 77 (1-2), 491-495, 2001 | 137 | 2001 |
| Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ... Applied Physics Letters 98 (10), 2011 | 114 | 2011 |
| Voltage-induced switching of nanoscale magnetic tunnel junctions JG Alzate, PK Amiri, P Upadhyaya, SS Cherepov, J Zhu, M Lewis, ... 2012 International Electron Devices Meeting, 29.5. 1-29.5. 4, 2012 | 112 | 2012 |
| Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy H Zhao, B Glass, PK Amiri, A Lyle, Y Zhang, YJ Chen, G Rowlands, ... Journal of Physics D: Applied Physics 45 (2), 025001, 2011 | 93 | 2011 |
| Novel Love mode surface acoustic wave based immunosensors K Kalantar-Zadeh, W Wlodarski, YY Chen, BN Fry, K Galatsis Sensors and Actuators B: Chemical 91 (1-3), 143-147, 2003 | 93 | 2003 |
| Highly sensitive layered ZnO/LiNbO3 SAW device with InOx selective layer for NO2 and H2 gas sensing SJ Ippolito, S Kandasamy, K Kalantar-Zadeh, W Wlodarski, K Galatsis, ... Sensors and Actuators B: Chemical 111, 207-212, 2005 | 92 | 2005 |
Kang L. WangElectrical Engineering DepartmentVerified email at ee.ucla.edu
