Semiconductor device and method of producing the same M Koyama US Patent App. 15/299,056, 2017 | 8 | 2017 |
Improved electrical performance of solution-processed zinc oxide-based thin-film transistors with bilayer structures K Oura, H Wada, M Koyama, T Maemoto, S Sasa Journal of Information Display 23 (1), 105-113, 2022 | 7 | 2022 |
Electron transport in InAs/AlGaSb ballistic rectifiers T Maemoto, M Koyama, M Furukawa, H Takahashi, S Sasa, M Inoue Journal of Physics: Conference Series 38 (1), 112, 2006 | 7 | 2006 |
Study for Enhancement of Terahertz Radiation Using GaSb/InAs Heterostructures S Sasa, Y Kinoshita, M Tatsumi, M Koyama, T Maemoto, S Hamauchi, ... Journal of Physics: Conference Series 906 (1), 012015, 2017 | 6 | 2017 |
Method for manufacturing semiconductor device M Koyama, K Matsuura, T Komatani US Patent 9,040,426, 2015 | 5 | 2015 |
Nonlinear electron transport in InAs/AlGaSb three-terminal ballistic junctions M Koyama, T Inoue, N Amano, T Maemoto, S Sasa, M Inoue Journal of Physics: Conference Series 109 (1), 012023, 2008 | 4 | 2008 |
Nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices M Koyama, T Inoue, N Amano, T Maemoto, S Sasa, M Inoue physica status solidi c 5 (1), 107-110, 2008 | 4 | 2008 |
Characteristics of the Hf0.5Zr0.5O2 Thin Films Grown by a Chemical Solution Deposition Method M YANO, T INOUE, H OTA, T KAWAMOTO, Y HIROFUJI, M KOYAMA, ... 材料 68 (10), 745-750, 2019 | 3 | 2019 |
Process of forming nitride semiconductor device M Koyama US Patent 9,799,508, 2017 | 3 | 2017 |
Effects of He plasma treatment on zinc oxide thin film transistors S Shinya, T Kaneko, M Koyama, T Maemoto, S Sasa 2017 IEEE International Meeting for Future of Electron Devices, Kansai …, 2017 | 3 | 2017 |
Fabrication and characterization of fully transparent zno thin-film transistors and self-switching nano-diodes Y Sun, K Ashida, S Sasaki, M Koyama, T Maemoto, S Sasa, S Kasai, ... Journal of Physics: Conference Series 647 (1), 012068, 2015 | 3 | 2015 |
Method for fabricating semiconductor device M Koyama US Patent 8,896,025, 2014 | 3 | 2014 |
Electron transport properties in InAs four‐terminal ballistic junctions under weak magnetic fields M Koyama, K Fujiwara, N Amano, T Maemoto, S Sasa, M Inoue physica status solidi c 6 (6), 1501-1504, 2009 | 3 | 2009 |
Ballistic rectification effects in InAs/AlGaSb nanostructures M Koyama, H Takahashi, T Maemoto, S Sasa, M Inoue AIP Conference Proceedings 893 (1), 577-578, 2007 | 3 | 2007 |
Method for manufacturing semiconductor device M Koyama, K Matsuura, T Komatani US Patent 9,299,770, 2016 | 2 | 2016 |
Characterization of the VO2 thin films grown on glass substrates by MOD H Wada, T Fukawa, K Toyota, M Koyama, N Hiroshiba, K Koike Electronics and Communications in Japan 106 (3), e12403, 2023 | 1 | 2023 |
Repeated bending durability evaluation of ZnO and Al-doped ZnO thin films grown on cyclo-olefin polymer for flexible oxide device applications K Oura, T Kumatani, H Wada, M Koyama, T Maemoto, S Sasa Japanese Journal of Applied Physics 61 (10), 101001, 2022 | 1 | 2022 |
The thermal stability of -Ga2O3 thin films grown on (111) 3C-SiC template substrates M Koyama, T Kaneko, S Fujiwara, T Maemoto, S Sasa 2019 Compound Semiconductor Week (CSW), 1-2, 2019 | 1 | 2019 |
Enhanced Terahertz Radiation from GaSb/InAs Heterostructures S Sasa, M Tatsumi, Y Kinoshita, M Koyama, T Maemoto, I Kawayama, ... 2018 43rd International Conference on Infrared, Millimeter, and Terahertz …, 2018 | 1 | 2018 |
Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate M Sato, H Inada, H Obi, H Mori, T Fuyuki, S Balasekaran, D Kimura, ... Infrared Physics & Technology 137, 105133, 2024 | | 2024 |