Dr. Stefan Birner
Dr. Stefan Birner
nextnano GmbH, Germany
Verified email at - Homepage
Cited by
Cited by
Nextnano: general purpose 3-D simulations
S Birner, T Zibold, T Andlauer, T Kubis, M Sabathil, A Trellakis, P Vogl
IEEE Transactions on Electron Devices 54 (9), 2137-2142, 2007
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ...
Journal of Applied Physics 104 (9), 2008
Three-dimensional Si/Ge quantum dot crystals
D Grützmacher, T Fromherz, C Dais, J Stangl, E Müller, Y Ekinci, ...
Nano letters 7 (10), 3150-3156, 2007
Graphene solution‐gated field‐effect transistor array for sensing applications
M Dankerl, MV Hauf, A Lippert, LH Hess, S Birner, ID Sharp, A Mahmood, ...
Advanced Functional Materials 20 (18), 3117-3124, 2010
Modeling of Semiconductor Nanostructures with nextnano
S Birner, S Hackenbuchner, M Sabathil, G Zandler, JA Majewski, ...
Acta Physica Polonica A 110 (2), 111-124, 2006
The 3D nanometer device project nextnano: Concepts, methods, results
A Trellakis, T Zibold, T Andlauer, S Birner, RK Smith, R Morschl, P Vogl
Journal of Computational Electronics 5, 285-289, 2006
Driving Perpendicular Heat Flow: ()-Type Transverse Thermoelectrics for Microscale and Cryogenic Peltier Cooling
C Zhou, S Birner, Y Tang, K Heinselman, M Grayson
Physical review letters 110 (22), 227701, 2013
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
T Grange, D Stark, G Scalari, J Faist, L Persichetti, L Di Gaspare, ...
Applied Physics Letters 114 (11), 2019
Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces
S Birner
Advances in the theory of electronic structure of semiconductors
JA Majewski, S Birner, A Trellakis, M Sabathil, P Vogl
physica status solidi (c) 1 (8), 2003-2027, 2004
Theoretical model for the detection of charged proteins with a silicon-on-insulator sensor
S Birner, C Uhl, M Bayer, P Vogl
Journal of Physics: Conference Series 107 (1), 012002, 2008
Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a Ga As 1− x N x capping layer
O Schumann, S Birner, M Baudach, L Geelhaar, H Eisele, L Ivanova, ...
Physical Review B 71 (24), 245316, 2005
Hydrophobic interaction and charge accumulation at the diamond-electrolyte interface
M Dankerl, A Lippert, S Birner, EU Stützel, M Stutzmann, JA Garrido
Physical review letters 106 (19), 196103, 2011
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interfacial roughness scattering
T Grange, S Mukherjee, G Capellini, M Montanari, L Persichetti, ...
Physical Review Applied 13 (4), 044062, 2020
Efficient method for the calculation of dissipative quantum transport in quantum cascade lasers
P Greck, S Birner, B Huber, P Vogl
Optics Express 23 (5), 6587-6600, 2015
Control of Electron-State Coupling in Asymmetric Quantum Wells
C Ciano, M Virgilio, M Montanari, L Persichetti, L Di Gaspare, M Ortolani, ...
Physical Review Applied 11 (1), 014003, 2019
Accelerated dynamics simulations of interstitial-cluster growth
S Birner, J Kim, DA Richie, JW Wilkins, AF Voter, T Lenosky
Solid state communications 120 (7-8), 279-282, 2001
Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: Determination of the band offsets for In x Ga 1− x As and In x Ga 1− x As 1− y N y quantum wells
M Galluppi, L Geelhaar, H Riechert, M Hetterich, A Grau, S Birner, W Stolz
Physical Review B 72 (15), 155324, 2005
Semiconductor-based electron flying qubits: review on recent progress accelerated by numerical modelling
H Edlbauer, J Wang, T Crozes, P Perrier, S Ouacel, C Geffroy, G Georgiou, ...
EPJ Quantum Technology 9 (1), 21, 2022
Ballistic quantum transport using the contact block reduction (CBR) method: An introduction
S Birner, C Schindler, P Greck, M Sabathil, P Vogl
Journal of computational electronics 8, 267-286, 2009
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