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SungGeun Kim
SungGeun Kim
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Title
Cited by
Cited by
Year
Full three-dimensional quantum transport simulation of atomistic interface roughness in silicon nanowire FETs
SG Kim, M Luisier, A Paul, TB Boykin, G Klimeck
IEEE Transactions on Electron Devices 58 (5), 1371-1380, 2011
742011
Engineering Nanowire n-MOSFETs at Lg<8 nm
SR Mehrotra, SG Kim, T Kubis, M Povolotskyi, MS Lundstrom, G Klimeck
Electron Devices, IEEE Transactions on 60 (7), 2171-2177, 2013
57*2013
On the bandstructure velocity and ballistic current of ultra-narrow silicon nanowire transistors as a function of cross section size, orientation, and bias
N Neophytou, SG Kim, G Klimeck, H Kosina
Journal of Applied Physics 107 (11), 2010
332010
Room-temperature graphene-nanoribbon tunneling field-effect transistors
WS Hwang, P Zhao, SG Kim, R Yan, G Klimeck, A Seabaugh, ...
npj 2D Materials and Applications 3 (1), 43, 2019
312019
Nemo5, a parallel, multiscale, multiphysics nanoelectronics modeling tool
J Sellier, J Fonseca, TC Kubis, M Povolotskyi, Y He, H Ilatikhameneh, ...
Proc. SISPAD, 1-4, 2012
232012
Transistor roadmap projection using predictive full-band atomistic modeling
M Salmani-Jelodar, S Kim, K Ng, G Klimeck
Applied Physics Letters 105 (8), 2014
202014
More Moore landscape for system readiness-ITRS2. 0 requirements
M Badaroglu, K Ng, M Salmani, SG Kim, G Klimeck, CP Chang, C Cheung, ...
2014 IEEE 32nd International Conference on Computer Design (ICCD), 147-152, 2014
102014
Resonant tunneling diode simulation with NEGF
HH Park, Z Jiang, AG Akkala, S Steiger, M Povolotskyi, TC Kubis, ...
Retrieved on January 12, 2021, 2008
102008
Computational study of heterojunction graphene nanoribbon tunneling transistors with pd orbital tight-binding method
SG Kim, M Luisier, TB Boykin, G Klimeck
Applied Physics Letters 104 (24), 2014
92014
MuGFET
SG Kim, G Klimeck, S Damodaran, BP Haley
DOI10.4231/D3HM52K86, 2011
82011
MOSFet
S Ahmed, S Mehrotra, S Kim, M Mannino, G Klimeck, D Vasileska, ...
Режим доступу до ресурсу: https://nanohub. org/resources/mosfet, 2017
72017
Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors
SG Kim, M Luisier, TB Boykin, G Klimeck
Applied Physics Letters 99 (23), 2011
72011
OMEN Nanowire
SG Kim, M Luisier, BP Haley, A Paul, SR Mehrotra, G Klimeck
https://nanohub.org/resources/omenwire 10254, 2008
72008
Performance Degradation due to Thick Physical Layer of High-k Oxide in Ultra- scaled MOSFETs and Mitigation through Electrostatics Design
M Salmani-Jelodar, S Kim, K Ng, G Klimeck
IEEE Silicon Nanoelectronics Workshop, 2014
52014
On the Scaling Issues and Possible Solutions for Double Gate MOSFETs at the End of ITRS
MS Jelodar, SG Kim, K Ng, G Klimeck
TECHCON, 2013
3*2013
Quantum corrected drift-diffusion simulation for prediction of CMOS scaling
SG Kim, M Salmani-Jelodar, K Ng, G Klimeck
71st Device Research Conference, 119-120, 2013
12013
Effects of interface roughness scattering on RF performance of nanowire transistors
S Kim, SR Mehrotra, M Luisier, TB Boykin, G Klimeck
2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011
12011
ELECTRON SCATTERING IN QUASI-ONE-DIMENSIONAL NANOSCALE TRANSISTORS
SG Kim
Purdue University, 2014
2014
ELECTRON SCATTERING
SG Kim
Purdue University West Lafayette, 2013
2013
Atomistic Simulation of Graphene Transistors
SG Kim, G Klimeck, J Geng, JE Fonseca, M Luisier, T Boykin
Materials Structures and Devices (MSD) Review, 2012
2012
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Articles 1–20