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Nadim Chowdhury
Nadim Chowdhury
MIT, EECS
Verified email at mit.edu
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Year
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
10962018
Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
K Hoo Teo, Y Zhang, N Chowdhury, S Rakheja, R Ma, Q Xie, E Yagyu, ...
Journal of Applied Physics 130 (16), 2021
1512021
Materials and processing issues in vertical GaN power electronics
J Hu, Y Zhang, M Sun, D Piedra, N Chowdhury, T Palacios
Materials Science in Semiconductor Processing 78, 75-84, 2018
1472018
Large-area 1.2-kV GaN vertical power FinFETs with a record switching figure of merit
Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ...
IEEE Electron Device Letters 40 (1), 75-78, 2018
1402018
P-channel GaN transistor based on p-GaN/AlGaN/GaN on Si
N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ...
IEEE Electron Device Letters 40 (7), 1036-1039, 2019
1092019
Regrowth-free GaN-based Complementary Logic on a Si Substrate
N Chowdhury, Q Xie, M Yuan, K Cheng, HW Then, T Palacios
IEEE Electron Device Letters 41 (5), 2020
1062020
720-V/0.35-m cm2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers
Y Zhang, M Yuan, N Chowdhury, K Cheng, T Palacios
IEEE Electron Device Letters 39 (5), 715-718, 2018
942018
Prospects for wide bandgap and ultrawide bandgap CMOS devices
SJ Bader, H Lee, R Chaudhuri, S Huang, A Hickman, A Molnar, HG Xing, ...
IEEE Transactions on Electron Devices 67 (10), 4010-4020, 2020
902020
GaN nanowire n-MOSFET with 5 nm channel length for applications in digital electronics
N Chowdhury, G Iannaccone, G Fiori, DA Antoniadis, T Palacios
IEEE electron device letters 38 (7), 859-862, 2017
532017
First demonstration of a self-aligned GaN p-FET
N Chowdhury, Q Xie, M Yuan, NS Rajput, P Xiang, K Cheng, HW Then, ...
2019 IEEE International Electron Devices Meeting (IEDM), 4.6. 1-4.6. 4, 2019
442019
Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm
J Lemettinen, N Chowdhury, H Okumura, I Kim, S Suihkonen, T Palacios
IEEE Electron Device Letters 40 (8), 1245-1248, 2019
362019
Self-Aligned E-mode GaN p-Channel FinFET with Ion> 100 mA/mm and Ion/Ioff> 107
N Chowdhury, Q Xie, T Palacios
IEEE Electron Device Letters, 2022
312022
Field-induced acceptor ionization in enhancement-mode GaN p-MOSFETs
N Chowdhury, Q Xie, J Niroula, NS Rajput, K Cheng, HW Then, ...
2020 IEEE International Electron Devices Meeting (IEDM), 5.5. 1-5.5. 4, 2020
272020
Negative capacitance tunnel field effect transistor: A novel device with low subthreshold swing and high on current
N Chowdhury, SMF Azad, QDM Khosru
ECS Transactions 58 (16), 1, 2014
262014
Tungsten-Gated GaN/AlGaN p-FET with Imax> 120 mA/mm on GaN-on-Si
N Chowdhury, Q Xie, T Palacios
IEEE Electron Device Letters, 2022
252022
Barrier heights and Fermi level pinning in metal contacts on p-type GaN
S Wahid, N Chowdhury, MK Alam, T Palacios
Applied Physics Letters 116 (21), 2020
212020
Structural, dielectric and magnetic properties of Ta-substituted Bi0. 8La0. 2FeO3 multiferroics
T Fakhrul, R Mahbub, N Chowdhury, QDM Khosru, A Sharif
Journal Of Alloys And Compounds 622, 471-476, 2015
202015
Superior performance of 5-nm gate length GaN nanowire nFET for digital logic applications
Y Chu, SC Lu, N Chowdhury, M Povolotskyi, G Klimeck, M Mohamed, ...
IEEE Electron Device Letters 40 (6), 874-877, 2019
192019
GaN ring oscillators operational at 500° C based on a GaN-on-Si platform
M Yuan, Q Xie, K Fu, T Hossain, J Niroula, JA Greer, N Chowdhury, ...
IEEE Electron Device Letters 43 (11), 1842-1845, 2022
162022
NbN-gated GaN transistor technology for applications in quantum computing systems
Q Xie, N Chowdhury, A Zubair, MS Lozano, J Lemettinen, M Colangelo, ...
2021 symposium on VLSI technology, 1-2, 2021
162021
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