| Improving linearity by introducing Al in HfO2 as a memristor synapse device S Chandrasekaran, FM Simanjuntak, R Saminathan, D Panda, TY Tseng Nanotechnology 30 (44), 445205, 2019 | 103 | 2019 |
| Enhanced synaptic linearity in ZnO-based invisible memristive synapse by introducing double pulsing scheme S Chandrasekaran, FM Simanjuntak, D Panda, TY Tseng IEEE Transactions on Electron Devices 66 (11), 4722-4726, 2019 | 59 | 2019 |
| ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices FM Simanjuntak, S Chandrasekaran, CC Lin, TY Tseng APL Materials 7 (5), 2019 | 46 | 2019 |
| Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications A Saleem, FM Simanjuntak, S Chandrasekaran, S Rajasekaran, ... Applied Physics Letters 118 (11), 2021 | 38 | 2021 |
| Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications FM Simanjuntak, T Ohno, S Chandrasekaran, TY Tseng, S Samukawa Nanotechnology 31 (26), 26LT01, 2020 | 37 | 2020 |
| Fast, Highly Flexible, and Transparent TaOx-Based Environmentally Robust Memristors for Wearable and Aerospace Applications S Rajasekaran, FM Simanjuntak, D Panda, S Chandrasekaran, R Aluguri, ... ACS Applied Electronic Materials 2 (10), 3131-3140, 2020 | 34 | 2020 |
| Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning PY Jung, D Panda, S Chandrasekaran, S Rajasekaran, TY Tseng IEEE Journal of the Electron Devices Society 8, 110-115, 2020 | 34 | 2020 |
| Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell FM Simanjuntak, P Singh, S Chandrasekaran, FJ Lumbantoruan, ... Semiconductor Science and Technology 32 (12), 124003, 2017 | 31 | 2017 |
| Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell FM Simanjuntak, S Chandrasekaran, B Pattanayak, CC Lin, TY Tseng Nanotechnology 28 (38), 38LT02, 2017 | 31 | 2017 |
| Switching failure mechanism in zinc peroxide-based programmable metallization cell FM Simanjuntak, S Chandrasekaran, CC Lin, TY Tseng Nanoscale research letters 13, 1-8, 2018 | 29 | 2018 |
| The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random … S Chandrasekaran, FM Simanjuntak, R Aluguri, TY Tseng Thin Solid Films 660, 777-781, 2018 | 27 | 2018 |
| Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer S Chandrasekaran, FM Simanjuntak, TY Tseng Japanese journal of applied physics 57 (4S), 04FE10, 2018 | 26 | 2018 |
| Synthesis of mesoporous NiFe2O4 nanoparticles for enhanced supercapacitive performance N Kumar, A Kumar, S Chandrasekaran, TY Tseng J. Clean Energy Technol 6 (1), 51-55, 2018 | 26 | 2018 |
| Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory S Chandrasekaran, FM Simanjuntak, TL Tsai, CA Lin, TY Tseng Applied Physics Letters 111 (11), 2017 | 25 | 2017 |
| Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices LY Chang, FM Simanjuntak, CL Hsu, S Chandrasekaran, TY Tseng Applied Physics Letters 117 (7), 2020 | 20 | 2020 |
| Barrier layer induced switching stability in Ga: ZnO nanorods based electrochemical metallization memory D Panda, FM Simanjuntak, S Chandrasekaran, B Pattanayak, P Singh, ... IEEE Transactions on Nanotechnology 19, 764-768, 2020 | 18 | 2020 |
| Synaptic behaviour of TiO x/HfO2 RRAM enhanced by inserting ultrathin Al2O3 layer for neuromorphic computing D Panda, CA Chu, A Pradhan, S Chandrasekharan, B Pattanayak, ... Semiconductor Science and Technology 36 (4), 045002, 2021 | 15 | 2021 |
| Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications S Rajasekaran, FM Simanjuntak, S Chandrasekaran, D Panda, A Saleem, ... IEEE Electron Device Letters 43 (1), 9-12, 2021 | 13 | 2021 |
| A comprehensive review on printed electronics: a technology drift towards a sustainable future S Chandrasekaran, A Jayakumar, R Velu Nanomaterials 12 (23), 4251, 2022 | 9 | 2022 |
| ZTO/MgO-based optoelectronic synaptic memristor for neuromorphic computing CC Hsu, S Shrivastava, S Pratik, S Chandrasekaran, TY Tseng IEEE Transactions on Electron Devices 70 (3), 1048-1054, 2023 | 7 | 2023 |
Firman Mangasa SimanjuntakLecturer, Marie-Curie Fellow - University of SouthamptonVerified email at soton.ac.uk
