High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer J Wang, Q Yao, CW Huang, X Zou, L Liao, S Chen, Z Fan, K Zhang, W Wu, ... Advanced materials 28 (37), 8302-8308, 2016 | 476 | 2016 |
Observation of atomic diffusion at twin-modified grain boundaries in copper KC Chen, WW Wu, CN Liao, LJ Chen, KN Tu Science 321 (5892), 1066-1069, 2008 | 406 | 2008 |
Dynamic evolution of conducting nanofilament in resistive switching memories JY Chen, CL Hsin, CW Huang, CH Chiu, YT Huang, SJ Lin, WW Wu, ... Nano letters 13 (8), 3671-3677, 2013 | 393 | 2013 |
Interface engineering for high-performance top-gated MoS2 field effect transistors L Liao, X Zou 2014 12th IEEE International Conference on Solid-State and Integrated …, 2014 | 336 | 2014 |
Thermal stability and performance of NbSiTaTiZr high-entropy alloy barrier for copper metallization MH Tsai, CW Wang, CW Tsai, WJ Shen, JW Yeh, JY Gan, WW Wu Journal of the Electrochemical Society 158 (11), H1161, 2011 | 246 | 2011 |
Switching kinetic of VCM‐based memristor: evolution and positioning of nanofilament JY Chen, CW Huang, CH Chiu, YT Huang, WW Wu Advanced Materials 27 (34), 5028-5033, 2015 | 211 | 2015 |
Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices YC Lin, KC Lu, WW Wu, J Bai, LJ Chen, KN Tu, Y Huang Nano letters 8 (3), 913-918, 2008 | 207 | 2008 |
Flexible ferroelectric element based on van der Waals heteroepitaxy J Jiang, Y Bitla, CW Huang, TH Do, HJ Liu, YH Hsieh, CH Ma, CY Jang, ... Science Advances 3 (6), e1700121, 2017 | 202 | 2017 |
In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction KC Lu, WW Wu, HW Wu, CM Tanner, JP Chang, LJ Chen, KN Tu Nano letters 7 (8), 2389-2394, 2007 | 162 | 2007 |
Well-aligned ZnO nanowires with excellent field emission and photocatalytic properties FH Chu, CW Huang, CL Hsin, CW Wang, SY Yu, PH Yeh, WW Wu Nanoscale 4 (5), 1471-1475, 2012 | 136 | 2012 |
Van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) transparent flexible memristor VQ Le, TH Do, JRD Retamal, PW Shao, YH Lai, WW Wu, JH He, ... Nano Energy 56, 322-329, 2019 | 131 | 2019 |
In-situ TEM Observation of Repeating Events of Nucleation in Epitaxial Growth of Nano CoSi2 in Nanowires of Si YC Chou, WW Wu, SL Cheng, BY Yoo, N Myung, LJ Chen, KN Tu Nano letters 8 (8), 2194-2199, 2008 | 118 | 2008 |
Facile synthesis of mesoporous NiFe2O4/CNTs nanocomposite cathode material for high performance asymmetric pseudocapacitors N Kumar, A Kumar, GM Huang, WW Wu, TY Tseng Applied Surface Science 433, 1100-1112, 2018 | 98 | 2018 |
Synthesis of taperlike Si nanowires with strong field emission YL Chueh, LJ Chou, SL Cheng, JH He, WW Wu, LJ Chen Applied Physics Letters 86 (13), 2005 | 97 | 2005 |
Direct Observation of Dual-Filament Switching Behaviors in Ta2 O5-Based Memristors. CF Chang, JY Chen, CW Huang, CH Chiu, TY Lin, PH Yeh, WW Wu Small (Weinheim an der Bergstrasse, Germany) 13 (15), 2017 | 96 | 2017 |
Oxide heteroepitaxy for flexible optoelectronics Y Bitla, C Chen, HC Lee, TH Do, CH Ma, LV Qui, CW Huang, WW Wu, ... ACS Applied Materials & Interfaces 8 (47), 32401-32407, 2016 | 86 | 2016 |
Growth of high-density titanium silicide nanowires in a single direction on a silicon surface HC Hsu, WW Wu, HF Hsu, LJ Chen Nano letters 7 (4), 885-889, 2007 | 85 | 2007 |
Rational design of ZnO: H/ZnO bilayer structure for high-performance thin-film transistors A Abliz, CW Huang, J Wang, L Xu, L Liao, X Xiao, WW Wu, Z Fan, C Jiang, ... ACS Applied Materials & Interfaces 8 (12), 7862-7868, 2016 | 83 | 2016 |
Dielectric engineering of a boron nitride/hafnium oxide heterostructure for high‐performance 2D field effect transistors X Zou, CW Huang, L Wang, LJ Yin, W Li, J Wang, B Wu, Y Liu, Q Yao, ... Advanced Materials 28 (10), 2062-2069, 2016 | 83 | 2016 |
Homogeneous Nucleation of Epitaxial CoSi2 and NiSi in Si Nanowires YC Chou, WW Wu, LJ Chen, KN Tu Nano Letters 9 (6), 2337-2342, 2009 | 82 | 2009 |