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Asif Khan
Asif Khan
Assistant Professor, ECE and MSE, Georgia Tech
Verified email at ece.gatech.edu - Homepage
Title
Cited by
Cited by
Year
Negative capacitance in a ferroelectric capacitor
AI Khan, K Chatterjee, B Wang, S Drapcho, L You, C Serrao, SR Bakaul, ...
Nature materials 14 (2), 182, 2015
7832015
The future of ferroelectric field-effect transistor technology
AI Khan, A Keshavarzi, S Datta
Nature Electronics 3 (10), 588-597, 2020
5172020
Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
AI Khan, D Bhowmik, P Yu, SJ Kim, X Pan, R Ramesh, S Salahuddin
Applied Physics Letters 99 (11), 113501, 2011
3922011
Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation
AI Khan, CW Yeung, C Hu, S Salahuddin
Electron Devices Meeting (IEDM), 2011 IEEE International, 11.3. 1-11.3. 4, 2011
3722011
Spatially resolved steady-state negative capacitance
AK Yadav, KX Nguyen, Z Hong, P García-Fernández, P Aguado-Puente, ...
Nature, 1, 2019
3162019
Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2
M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ...
Advanced Functional Materials, 2016
2782016
Negative Capacitance in Short Channel FinFETs Externally Connected to An Epitaxial Ferroelectric Capacitor
A Islam Khan, K Chatterjee, JP Duarte, Z Lu, A Sachid, S Khandelwal, ...
IEEE Electron Device Letters 37 (1), 111 - 114, 2016
252*2016
Single Crystal Functional Oxides on Silicon
SR Bakaul, CR Serrao, M Lee, CW Yeung, A Sarker, SL Hsu, A Yadav, ...
Nature Communications, 10547, 2016
2022016
Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics
CI Lin, AI Khan, S Salahuddin, C Hu
IEEE Transactions on Electron Devices 63 (5), 2197 - 2199, 2016
1962016
Room-temperature negative capacitance in a ferroelectric–dielectric superlattice heterostructure
W Gao, A Khan, X Marti, C Nelson, C Serrao, J Ravichandran, R Ramesh, ...
Nano letters 14 (10), 5814-5819, 2014
1652014
Negative Capacitance Behavior in a Leaky Ferroelectric
AI Khan, U Radhakrishna, K Chatterjee, S Salahuddin, DA Antoniadis
IEEE Transactions on Electron Devices 63 (11), 4416-4422, 2016
1432016
Nonvolatile memory design based on ferroelectric FETs
S George, K Ma, A Aziz, X Li, A Khan, S Salahuddin, MF Chang, S Datta, ...
Design Automation Conference (DAC), 2016 53nd ACM/EDAC/IEEE, 1-6, 2016
1272016
Compact models of negative-capacitance FinFETs: Lumped and distributed charge models
JP Duarte, S Khandelwal, AI Khan, A Sachid, YK Lin, HL Chang, ...
Electron Devices Meeting (IEDM), 2016 IEEE International, 30.5. 1-30.5. 4, 2016
1022016
Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery
K Chatterjee, S Kim, G Karbasian, AJ Tan, AK Yadav, AI Khan, C Hu, ...
IEEE Electron Device Letters 38 (10), 1379-1382, 2017
922017
Enabling Energy-Efficient Nonvolatile Computing With Negative Capacitance FET
X Li, J Sampson, A Khan, K Ma, S George, A Aziz, SK Gupta, ...
IEEE Transactions on Electron Devices 64 (8), 3452-3458, 2017
912017
Work function engineering for performance improvement in leaky negative capacitance FETs
AI Khan, U Radhakrishna, S Salahuddin, D Antoniadis
IEEE Electron Device Letters 38 (9), 1335-1338, 2017
852017
Ferroelectric negative capacitance domain dynamics
M Hoffmann, AI Khan, C Serrao, Z Lu, S Salahuddin, M Pešić, ...
Journal of Applied Physics 123 (18), 184101, 2018
832018
Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics
S Khandelwal, JP Duarte, AI Khan, S Salahuddin, C Hu
IEEE Electron Device Letters 38 (1), 142-144, 2017
832017
Low power negative capacitance FETs for future quantum-well body technology
CW Yeung, AI Khan, A Sarker, S Salahuddin, C Hu
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International …, 2013
782013
Dense Electron System from Gate-Controlled Surface Metal–Insulator Transition
K Liu, D Fu, J Cao, J Suh, KX Wang, C Cheng, DF Ogletree, H Guo, ...
Nano letters 12 (12), 6272-6277, 2012
712012
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