| Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor E Lee, D Kang, JC Lee, CJ Kim, H Lim US Patent 8,618,543, 2013 | 3683 | 2013 |
| High-Performance oxide thin film transistors passivated by various gas plasmas S Kim, J Park, C Kim, S Kim, I Song, H Yin, J Lee, E Lee, Y Park The Electrochemical Society, 214th ECS Meeting, 1, 2008 | 619 | 2008 |
| Two series oxide resistors applicable to high speed and high density nonvolatile memory MJ Lee, Y Park, DS Suh, EH Lee, S Seo, DC Kim, R Jung, BS Kang, ... Advanced Materials 19 (22), 3919-3923, 2007 | 512 | 2007 |
| Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays S Jeon, SE Ahn, I Song, CJ Kim, UI Chung, E Lee, I Yoo, A Nathan, S Lee, ... Nature materials 11 (4), 301-305, 2012 | 478 | 2012 |
| A flexible bimodal sensor array for simultaneous sensing of pressure and temperature NT Tien, S Jeon, DI Kim, TQ Trung, M Jang, BU Hwang, KE Byun, J Bae, ... Advanced Materials 26 (5), 796-804, 2014 | 432 | 2014 |
| Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors CJ Kim, S Kim, JH Lee, JS Park, S Kim, J Park, E Lee, J Lee, Y Park, ... Applied Physics Letters 95 (25), 2009 | 275 | 2009 |
| Quantification of microstructural features in α/β titanium alloys J Tiley, T Searles, E Lee, S Kar, R Banerjee, JC Russ, HL Fraser Materials Science and Engineering: A 372 (1-2), 191-198, 2004 | 252 | 2004 |
| Oxide semiconductor, thin film transistor including the same and method of manufacturing a thin film transistor D Kang, I Song, Y Park, CJ Kim, E Lee, JC Lee US Patent App. 12/078,706, 2009 | 224 | 2009 |
| Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors HS Kim, SH Jeon, JS Park, TS Kim, KS Son, JB Seon, SJ Seo, SJ Kim, ... Scientific reports 3 (1), 1459, 2013 | 186 | 2013 |
| Oxide semiconductors and thin film transistors comprising the same CJ Kim, E Lee, Y Park, JC Park US Patent 7,935,964, 2011 | 186 | 2011 |
| High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation J Park, S Kim, C Kim, S Kim, I Song, H Yin, KK Kim, S Lee, K Hong, J Lee, ... Applied Physics Letters 93 (5), 2008 | 179 | 2008 |
| Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors J Park, I Song, S Kim, S Kim, C Kim, J Lee, H Lee, E Lee, H Yin, KK Kim, ... Applied Physics Letters 93 (5), 2008 | 141 | 2008 |
| Microstructural visualization of compositional changes induced by transition metal dissolution in Ni-rich layered cathode materials by high-resolution particle analysis DS Ko, JH Park, S Park, YN Ham, SJ Ahn, JH Park, HN Han, E Lee, ... Nano energy 56, 434-442, 2019 | 136 | 2019 |
| Fabrication methods of a ZnO thin film structure and a ZnO thin film transistor, and a ZnO thin film structure and a ZnO thin film transistor CJ Kim, I Song, D Kang, Y Park, E Lee US Patent 7,919,365, 2011 | 134 | 2011 |
| Short channel characteristics of gallium–indium–zinc–oxide thin film transistors for three-dimensional stacking memory I Song, S Kim, H Yin, CJ Kim, J Park, S Kim, HS Choi, E Lee, Y Park IEEE Electron Device Letters 29 (6), 549-552, 2008 | 132 | 2008 |
| Source/drain series-resistance effects in amorphous gallium–indium zinc-oxide thin film transistors J Park, C Kim, S Kim, I Song, S Kim, D Kang, H Lim, H Yin, R Jung, E Lee, ... IEEE Electron Device Letters 29 (8), 879-881, 2008 | 123 | 2008 |
| Direct observations and analyses of dislocation substructures in the α phase of an α/β Ti-alloy formed by nanoindentation GB Viswanathan, E Lee, DM Maher, S Banerjee, HL Fraser Acta materialia 53 (19), 5101-5115, 2005 | 117 | 2005 |
| 180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications S Jeon, S Park, I Song, JH Hur, J Park, S Kim, S Kim, H Yin, E Lee, S Ahn, ... 2010 International Electron Devices Meeting, 21.3. 1-21.3. 4, 2010 | 116 | 2010 |
| Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application E Lee, A Benayad, T Shin, HI Lee, DS Ko, TS Kim, KS Son, M Ryu, S Jeon, ... Scientific reports 4 (1), 4948, 2014 | 106 | 2014 |
| Highly Flexible and Transparent Ag Nanowire Electrode Encapsulated with Ultra-Thin Al2O3: Thermal, Ambient, and Mechanical Stabilities B Hwang, Y An, H Lee, E Lee, S Becker, YH Kim, H Kim Scientific reports 7 (1), 41336, 2017 | 102 | 2017 |
