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Woo-Shik Jung
Woo-Shik Jung
Electrical Engineering, Stanford University
Verified email at stanford.edu
Title
Cited by
Cited by
Year
High‐performance transition metal dichalcogenide photodetectors enhanced by self‐assembled monolayer doping
DH Kang, MS Kim, J Shim, J Jeon, HY Park, WS Jung, HY Yu, CH Pang, ...
Advanced Functional Materials 25 (27), 4219-4227, 2015
3022015
N-Channel Germanium MOSFET Fabricated Below 360 by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICs
JH Park, D Kuzum, WS Jung, KC Saraswat
Electron Device Letters, IEEE 32 (3), 234-236, 2011
2462011
Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane
DH Kang, J Shim, SK Jang, J Jeon, MH Jeon, GY Yeom, WS Jung, ...
ACS nano 9 (2), 1099-1107, 2015
1652015
Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles
D Nam, DS Sukhdeo, JH Kang, J Petykiewicz, JH Lee, WS Jung, ...
Nano letters 13 (7), 3118-3123, 2013
1462013
Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism.
J Shim, HS Kim, YS Shim, DH Kang, HY Park, J Lee, J Jeon, SJ Jung, ...
Advanced Materials (Deerfield Beach, Fla.) 28 (26), 5293-5299, 2016
1102016
Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design.
HY Park, WS Jung, DH Kang, J Jeon, G Yoo, Y Park, J Lee, YH Jang, ...
Advanced Materials (Deerfield Beach, Fla.) 28 (5), 864-870, 2015
982015
High-efficiency pin photodetectors on selective-area-grown Ge for monolithic integration
HY Yu, S Ren, WS Jung, AK Okyay, DAB Miller, KC Saraswat
IEEE Electron Device Letters 30 (11), 1161-1163, 2009
762009
Wide-Range Controllable n-Doping of Molybdenum Disulfide (MoS2) through Thermal and Optical Activation
HY Park, MH Lim, J Jeon, G Yoo, DH Kang, SK Jang, MH Jeon, Y Lee, ...
ACS nano 9 (3), 2368-2376, 2015
722015
Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application
WS Jung, JH Park, A Nainani, D Nam, KC Saraswat
Applied Physics Letters 101 (7), 2012
552012
Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization
HW Jung, WS Jung, HY Yu, JH Park
Journal of alloys and compounds 561, 231-233, 2013
452013
Monolithic integration of germanium-on-insulator pin photodetector on silicon
JH Nam, F Afshinmanesh, D Nam, WS Jung, TI Kamins, ML Brongersma, ...
Optics express 23 (12), 15816-15823, 2015
422015
Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration
JH Park, M Tada, WS Jung, HSP Wong, KC Saraswat
Journal of Applied Physics 106 (7), 074510-074510-6, 2009
362009
9.4% efficient amorphous silicon solar cell on high aspect-ratio glass microcones.
J Kim, C Battaglia, M Charrière, A Hong, W Jung, H Park, C Ballif, ...
Advanced Materials (Deerfield Beach, Fla.) 26 (24), 4082-4086, 2014
352014
Formation of metal nanospheres and microspheres
AJ Hong, WS Jung, J Kim, JW Nah, DK Sadana
US Patent 8,685,858, 2014
292014
Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter
IY Lee, HY Park, JH Park, J Lee, WS Jung, HY Yu, SW Kim, GH Kim, ...
Organic Electronics 14 (6), 1586-1590, 2013
292013
Formation of metal nanospheres and microspheres
AJ Hong, WS Jung, J Kim, JW Nahum, DK Sadana
US Patent 9,040,428, 2015
252015
Poly-4-vinylphenol and poly (melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics
I Lee, HY Park, J Park, G Yoo, MH Lim, J Park, S Rathi, WS Jung, J Kim, ...
Nanoscale 6 (7), 3830-3836, 2014
252014
Characterization of Geometric Leakage Current of GeO2 Isolation and Effect of Forming Gas Annealing in Germanium p-n Junctions
WS Jung, JH Park, JYJ Lin, S Wong, KC Saraswat
Electron Device Letters, IEEE, 1-3, 2012
18*2012
Impacts of the thermal recovery process on In–Ga–Zn–O (IGZO) TFTs
SH Choi, MH Lim, WS Jung, JH Park
IEEE electron device letters 35 (8), 835-837, 2014
172014
Effects of Thermal Annealing on In Situ Phosphorus-Doped GermaniumJunction
J Shim, I Song, WS Jung, J Nam, JW Leem, JS Yu, DE Kim, WJ Cho, ...
IEEE Electron Device Letters 34 (1), 15-17, 2012
122012
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