Ultralow Lattice Thermal Conductivity and Thermoelectric Properties of Monolayer Tl2O M Sajjad, N Singh, S Sattar, S De Wolf, U Schwingenschlögl ACS Applied Energy Materials 2 (5), 3004-3008, 2019 | 65 | 2019 |
Wafer-Scale Growth of 2D PtTe2 with Layer Orientation Tunable High Electrical Conductivity and Superior Hydrophobicity M Wang, TJ Ko, MS Shawkat, SS Han, E Okogbue, HS Chung, TS Bae, ... ACS applied materials & interfaces 12 (9), 10839-10851, 2020 | 53 | 2020 |
Electronic Properties of Graphene–PtSe2 Contacts S Sattar, U Schwingenschlogl ACS Applied Materials & Interfaces 9 (18), 15809-15813, 2017 | 48 | 2017 |
Hydrogen storage in bilayer hexagonal boron nitride: a first-principles study DP Rai, B Chettri, PK Patra, S Sattar ACS omega 6 (45), 30362-30370, 2021 | 28 | 2021 |
Large-area 2D PtTe 2/silicon vertical-junction devices with ultrafast and high-sensitivity photodetection and photovoltaic enhancement by integrating water droplets MS Shawkat, TA Chowdhury, HS Chung, S Sattar, TJ Ko, JA Larsson, ... Nanoscale 12 (45), 23116-23124, 2020 | 23 | 2020 |
Monolayer and Janus (, Se, Te): A family of two-dimensional antiferromagnetic semiconductors S Sattar, MF Islam, CM Canali Physical Review B 106 (8), 085410, 2022 | 21 | 2022 |
Solid argon as a possible substrate for quasi-freestanding silicene RHUS S Sattar New Journal of Physics 16 (1088), 2014 | 18 | 2014 |
Tunable Electronic Properties and Large Rashba Splittings Found in Few-Layer Bi2Se3/PtSe2 Van der Waals Heterostructures S Sattar, JA Larsson ACS Applied Electronic Materials 2 (11), 3585-3592, 2020 | 15 | 2020 |
Epitaxial Growth and Determination of Band Alignment of Bi2Te3–WSe2 Vertical van der Waals Heterojunctions CW Yang, HL Tang, S Sattar, MH Chiu, Y Wan, CH Chen, J Kong, ... ACS Materials Letters 2 (10), 1351-1359, 2020 | 13 | 2020 |
Stacking effects in van der Waals heterostructures of silicene and hexagonal boron nitride S Sattar, Y Zhang, U Schwingenschlögl Advanced Theory and Simulations 1 (11), 1800083, 2018 | 13 | 2018 |
Proximity-induced spin-valley polarization in silicene or germanene on F-doped S Sattar, N Singh, U Schwingenschlögl Physical Review B 94 (20), 205415, 2016 | 12 | 2016 |
Superior gas sensing properties of β-In2Se3: A first-principles investigation SO Bolarinwa, S Sattar, AA AlShaikhi Computational Materials Science 201, 110880, 2022 | 10 | 2022 |
Silicene on Monolayer PtSe2: From Strong to Weak Binding via NH3 Intercalation S Sattar, N Singh, U Schwingenschlogl ACS applied materials & interfaces 10 (4), 4266-4270, 2018 | 10 | 2018 |
Wafer-Scale Anion Exchange Conversion of Nonlayered PtS Films to van der Waals Two-Dimensional PtTe2 Layers with Negative Photoresponsiveness SS Han, MS Shawkat, YH Lee, G Park, H Li, HS Chung, C Yoo, SA Mofid, ... Chemistry of Materials 34 (15), 6996-7005, 2022 | 8 | 2022 |
Reversible Transition of Semiconducting PtSe2 and Metallic PtTe2 for Scalable All-2D Edge-Contacted FETs SS Han, S Sattar, D Kireev, JC Shin, TS Bae, HI Ryu, J Cao, AK Shum, ... Nano letters 24 (6), 1891-1900, 2023 | 6 | 2023 |
Direct band gap in multilayer transition metal dichalcogenide nanoscrolls with enhanced photoluminescence C Lin, L Cai, JH Fu, S Sattar, Q Wang, Y Wan, CC Tseng, CW Yang, ... ACS Materials Letters 4 (8), 1547-1555, 2022 | 6 | 2022 |
Peel-and-Stick Integration of Atomically Thin Nonlayered PtS Semiconductors for Multidimensionally Stretchable Electronic Devices SS Han, TJ Ko, MS Shawkat, AK Shum, TS Bae, HS Chung, J Ma, S Sattar, ... ACS Applied Materials & Interfaces 14 (17), 20268-20279, 2022 | 6 | 2022 |
Rashba Effect and Raman Spectra of Tl2O/PtS2 Heterostructure S Sattar, JA Larsson ACS omega 6 (5), 4044-4050, 2021 | 6 | 2021 |
Giant valley-polarized spin splittings in magnetized Janus Pt dichalcogenides S Sattar, JA Larsson, CM Canali, S Roche, JH Garcia Physical Review B 105 (4), L041402, 2022 | 4 | 2022 |
Improving photocatalytic hydrogen generation of g-C3N4 via efficient charge separation imposed by Bi2O2Se nanosheets C Lin, X Zhao, Y Xiao, S Sattar, L Tang, A Nairan, Y Guo, M Xia, ... Carbon 218, 118721, 2024 | 3 | 2024 |