Michelle Moram
Michelle Moram
Senior Lecturer and Royal Society University Research Fellow, Imperial College London
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Cited by
Cited by
X-ray diffraction of III-nitrides
MA Moram, ME Vickers
Reports on progress in physics 72 (3), 036502, 2009
Piezoelectric coefficients and spontaneous polarization of ScAlN
MA Caro, S Zhang, T Riekkinen, M Ylilammi, MA Moram, ...
Journal of Physics: Condensed Matter 27 (24), 245901, 2015
Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides
S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram
Journal of applied physics 114 (13), 2013
Understanding x-ray diffraction of nonpolar gallium nitride films
MA Moram, CF Johnston, JL Hollander, MJ Kappers, CJ Humphreys
Journal of Applied Physics 105 (11), 2009
On the origin of threading dislocations in GaN films
MA Moram, CS Ghedia, DVS Rao, JS Barnard, Y Zhang, MJ Kappers, ...
Journal of Applied Physics 106 (7), 2009
Elastic constants and critical thicknesses of ScGaN and ScAlN
S Zhang, WY Fu, D Holec, CJ Humphreys, MA Moram
Journal of applied physics 114 (24), 2013
ScGaN and ScAlN: emerging nitride materials
MA Moram, S Zhang
Journal of Materials Chemistry A 2 (17), 6042-6050, 2014
Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction
MA Moram, ZH Barber, CJ Humphreys
Journal of applied physics 102 (2), 2007
Dislocation reduction in gallium nitride films using scandium nitride interlayers
MA Moram, Y Zhang, MJ Kappers, ZH Barber, CJ Humphreys
Applied Physics Letters 91 (15), 2007
The effect of oxygen incorporation in sputtered scandium nitride films
MA Moram, ZH Barber, CJ Humphreys
Thin Solid Films 516 (23), 8569-8572, 2008
On the accuracy of commonly used density functional approximations in determining the elastic constants of insulators and semiconductors
M Råsander, MA Moram
The Journal of Chemical Physics 143 (14), 2015
The effects of Si doping on dislocation movement and tensile stress in GaN films
MA Moram, MJ Kappers, F Massabuau, RA Oliver, CJ Humphreys
Journal of Applied Physics 109 (7), 2011
Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire
CF Johnston, MJ Kappers, MA Moram, JL Hollander, CJ Humphreys
Journal of crystal growth 311 (12), 3295-3299, 2009
Mg doping affects dislocation core structures in GaN
SK Rhode, MK Horton, MJ Kappers, S Zhang, CJ Humphreys, RO Dusane, ...
Physical review letters 111 (2), 025502, 2013
Electron effective mass and mobility limits in degenerate perovskite stannate
CA Niedermeier, S Rhode, K Ide, H Hiramatsu, H Hosono, T Kamiya, ...
Physical Review B 95 (16), 161202, 2017
Carbon nanotube (CNT) forest grown on diamond-like carbon (DLC) thin films significantly improves electrochemical sensitivity and selectivity towards dopamine
S Sainio, T Palomäki, S Rhode, M Kauppila, O Pitkänen, T Selkälä, G Toth, ...
Sensors and Actuators B: Chemical 211, 177-186, 2015
Segregation of In to dislocations in InGaN
MK Horton, S Rhode, SL Sahonta, MJ Kappers, SJ Haigh, TJ Pennycook, ...
Nano letters 15 (2), 923-930, 2015
Defect reduction in (112¯ 2) semipolar GaN grown on m-plane sapphire using ScN interlayers
CF Johnston, MA Moram, MJ Kappers, CJ Humphreys
Applied Physics Letters 94 (16), 2009
Band gap bowing in NixMg1−xO
CA Niedermeier, M Råsander, S Rhode, V Kachkanov, B Zou, N Alford, ...
Scientific reports 6 (1), 31230, 2016
Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon
MA Moram, ZH Barber, CJ Humphreys, TB Joyce, PR Chalker
Journal of applied physics 100 (2), 2006
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