Richard Haight
Richard Haight
IBM T.J. Watson Research Center
Verified email at
Cited by
Cited by
Fundamentals of adhesion
LH Lee
Springer Science & Business Media, 2013
Electron dynamics at surfaces
R Haight
Surface science reports 21 (8), 275-325, 1995
Band alignment at the interface
R Haight, A Barkhouse, O Gunawan, B Shin, M Copel, M Hopstaken, ...
Applied Physics Letters 98 (25), 253502, 2011
Complex formation and growth at the Cr–and Cu–polyimide interface
R Haight, RC White, BD Silverman, PS Ho
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (4…, 1988
Organic light emitting diodes having transparent cathode structures
S Guha, RA Haight, JM Karasinski, RR Troutman
US Patent 5,739,545, 1998
Cd-free buffer layer materials on Cu2ZnSn(SxSe1−x)4: Band alignments with ZnO, ZnS, and In2S3
DAR Barkhouse, R Haight, N Sakai, H Hiroi, H Sugimoto, DB Mitzi
Applied Physics Letters 100 (19), 193904, 2012
Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (AgxCu1–x)2ZnSnSe4
T Gershon, YS Lee, P Antunez, R Mankad, S Singh, D Bishop, ...
Advanced Energy Materials 6 (10), 1502468, 2016
Picosecond time-resolved photoemission study of the InP (110) surface
R Haight, J Bokor, J Stark, RH Storz, RR Freeman, PH Bucksbaum
Physical review letters 54 (12), 1302, 1985
Optically transparent diffusion barrier and top electrode in organic light emitting diode structures
RA Haight, RR Troutman
US Patent 5,714,838, 1998
Hydrogen adsorption on Si (111)–(7 7)
RJ Culbertson, LC Feldman, PJ Silverman, R Haight
Journal of Vacuum Science and Technology 20 (3), 868-871, 1982
Hybrid organic-inorganic semiconductor light emitting diodes
NA Bojarczuk Jr, S Guha, RA Haight
US Patent 5,898,185, 1999
Antibonding state on the Ge (111): As surface: spectroscopy and dynamics
R Haight, DR Peale
Physical review letters 70 (25), 3979, 1993
Atomic structure at the (111) Si‐SiO2 interface
R Haight, LC Feldman
Journal of Applied Physics 53 (7), 4884-4887, 1982
Removal of charged defects from metal oxide-gate stacks
EA Cartier, MW Copel, S Guha, RA Haight, FR McFeely, V Narayanan
US Patent 7,488,656, 2009
Role of oxygen vacancies in V/sub FB//V/sub t/stability of pFET metals on HfO/sub 2
E Cartier, FR McFeely, V Narayanan, P Jamison, BP Linder, M Copel, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 230-231, 2005
Method for minimizing sample damage during the ablation of material using a focused ultrashort pulsed beam
RA Haight, PP Longo, DP Morris, A Wagner
US Patent 6,333,485, 2001
Impact of nanoscale elemental distribution in high‐performance kesterite solar cells
K Sardashti, R Haight, T Gokmen, W Wang, LY Chang, DB Mitzi, ...
Advanced Energy Materials 5 (10), 1402180, 2015
Surface intervalley scattering on GaAs (110): direct observation with picosecond laser photoemission
R Haight, JA Silberman
Physical review letters 62 (7), 815, 1989
Tunable photoemission with harmonics of subpicosecond lasers
R Haight, DR Peale
Review of Scientific Instruments 65 (6), 1853-1857, 1994
Methods for repair of photomasks
BJ Grenon, RA Haight, DM Hayden, MS Hibbs, JP Levin, TE Neary, ...
US Patent 6,090,507, 2000
The system can't perform the operation now. Try again later.
Articles 1–20