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Ramon B Salazar
Ramon B Salazar
Verified email at qti.qualcomm.com
Title
Cited by
Cited by
Year
Toward low-power electronics: tunneling phenomena in transition metal dichalcogenides
S Das, A Prakash, R Salazar, J Appenzeller
ACS nano 8 (2), 1681-1689, 2014
2082014
Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
AV Penumatcha, RB Salazar, J Appenzeller
Nature communications 6 (1), 8948, 2015
1802015
From Fowler–Nordheim to nonequilibrium Green’s function modeling of tunneling
H Ilatikhameneh, RB Salazar, G Klimeck, R Rahman, J Appenzeller
IEEE Transactions on Electron Devices 63 (7), 2871-2878, 2016
462016
Dip‐pen nanolithography on (bio) reactive monolayer and block‐copolymer platforms: deposition of lines of single macromolecules
RB Salazar, A Shovsky, H Schönherr, GJ Vancso
Small 2 (11), 1274-1282, 2006
422006
A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations
RB Salazar, H Ilatikhameneh, R Rahman, G Klimeck, J Appenzeller
Journal of Applied Physics 118 (16), 2015
352015
Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure
MR Müller, R Salazar, S Fathipour, H Xu, K Kallis, U Künzelmann, ...
Nanoscale Research Letters 11, 1-6, 2016
302016
Drain current and transconductance model for the undoped body asymmetric double-gate MOSFET
A Ortiz-Conde, FJG Sanchez, S Malobabic, J Muci, R Salazar
2006 8th International Conference on Solid-State and Integrated Circuit …, 2006
262006
Observation of 1D behavior in Si nanowires: Toward high-performance TFETs
RB Salazar, SR Mehrotra, G Klimeck, N Singh, J Appenzeller
Nano letters 12 (11), 5571-5575, 2012
152012
Evaluating MOSFET harmonic distortion by successive integration of the I–V characteristics
R Salazar, A Ortiz-Conde, FJ García-Sánchez, CS Ho, JJ Liou
Solid-state electronics 52 (7), 1092-1098, 2008
132008
A minimal integral nonlinearity criterion to optimize the design of a new tanh/sinh-type bipolar transconductor
FJG Sánchez, A Ortiz-Conde, JL Finol, RB Salazar, JA Salcedo
IEEE Transactions on Circuits and Systems I: Fundamental Theory and …, 2002
122002
Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
AV Penumatcha, RB Salazar, J Appenzeller
Nature Communications 7, 2016
52016
On integration-based methods for MOSFET model parameter extraction
A Ortiz-Conde, FJG Sánchez, R Salazar
2008 9th International Conference on Solid-State and Integrated-Circuit …, 2008
52008
A computationally efficient method for evaluating distortion in DG MOSFETs
R Salazar, A Ortiz-Conde, FJG Sánchez
Proceedings of 2007 workshop on compact modeling, Nanotech-2007, Santa Clara …, 2007
52007
A Predictive Compact Model for High-Performance Tunneling-Field Effect Transistors Approaching the Accuracy of NEGF Simulations
RB Salazar, H Ilatikhameneh, R Rahman, G Klimeck, J Appenzeller
Online]. http://arxiv. org/abs/1506.00077, 2015
42015
A New Compact Model For High-Performance Tunneling-Field Effect Transistors
RB Salazar, H Ilatikhameneh, R Rahman, G Klimeck, J Appenzeller
Online]. http://arxiv. org/abs/1506.00077, 2015
42015
Harmonic distortion in MOSFETs calculated by successive integration of the transfer characteristics
R Salazar, A Ortiz-Conde, FJ Garcia-Sanchez
2008 9th International Conference on Solid-State and Integrated-Circuit …, 2008
32008
A new method for polynomial coefficient extraction applied to harmonic distortion calculation
A Ortiz-Conde, FJ García-Sánchez, R Salazar
ECS Transactions 9 (1), 389, 2007
22007
AFM tip mediated nanofabrication of (bio) reactive polymer platforms: Towards deposition of single dendrimer molecules onto reactive films
H Schönherr, R Salazar, A Shovsky, GJ Vancso
231th ACS National Meeting 2006: Spring 2006, 301-302, 2006
12006
Investigation of transport, capacitance, and high-accuracy modeling aspects in low-dimensional devices for tunneling applications
R Salazar
Purdue University, 2016
2016
Method to convert from power-law to polynomial thin-film transistors' models, and viceversa
A Ortiz-Conde, FJ Garcia Sanchez, R Salazar
INGENIERIA UC 16 (1), 7-10, 2009
2009
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Articles 1–20