Atanu Das
Atanu Das
School of Aeronautics and Astronautics, Zhejiang University
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Highly sensitive palladium oxide thin film extended gate FETs as pH sensor
A Das, DH Ko, CH Chen, LB Chang, CS Lai, FC Chu, L Chow, RM Lin
Sensors and Actuators B: Chemical 205, 199-205, 2014
GaN thin film based light addressable potentiometric sensor for pH sensing application
A Das, A Das, LB Chang, CS Lai, RM Lin, FC Chu, YH Lin, L Chow, ...
Applied Physics Express 6 (3), 036601, 2013
Atomic layer deposition of gallium oxide films as gate dielectrics in AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors
HY Shih, FC Chu, A Das, CY Lee, MJ Chen, RM Lin
Nanoscale Research Letters 11 (1), 235, 2016
Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte
SZ Rahaman, S Maikap, A Das, A Prakash, YH Wu, CS Lai, TC Tien, ...
Nanoscale research letters 7 (1), 614, 2012
High-κ HfO2 Nanocrystal Memory Capacitors Prepared by Phase Separation of Atomic-Layer-Deposited HfO2∕ Al2O3 Nanomixtures
S Maikap, A Das, TY Wang, TC Tien, LB Chang
Journal of the Electrochemical Society 156 (3), K28, 2009
Fabrication and thermal analysis of flip-chip light-emitting diodes with different numbers of Au stub bumps
CC Lin, LB Chang, MJ Jeng, CY Yen, A Das, CY Tang, MY Tsai, MJ Lai
Microelectronics Reliability 50 (5), 683-687, 2010
Magnetic quantization of the energy states in heavily doped semiconductors with nonparabolic energy bands
A Khan, A Das
Applied Physics A 89 (3), 695-699, 2007
Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure
A Das, LB Chang, RM Lin
AIP Advances 2 (3), 032159, 2012
An observation of charge trapping phenomena in structure
LB Chang, A Das, RM Lin, S Maikap, MJ Jeng, ST Chou
Applied Physics Letters 98 (22), 222106, 2011
Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric
RM Lin, FC Chu, A Das, SY Liao, ST Chou, LB Chang
Thin Solid Films 544, 526-529, 2013
Mobility–diffusivity relationship for heavily doped organic semiconductors
A Das, A Khan
Applied Physics A 93 (2), 527-532, 2008
Physical and Memory Characteristics of Atomic-Layer-Deposited High-κ Hafnium–Aluminum-Oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate
A Das, S Maikap, WC Li, LB Chang, JR Yang
Japanese Journal of Applied Physics 48 (5S1), 05DF02, 2009
Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal–Semiconductor–Metal Two-Dimensional Electron Gas Varactor
YC Ferng, LB Chang, A Das, CC Lin, CY Cheng, PY Kuei, L Chow
Japanese Journal of Applied Physics 51 (12R), 124201, 2012
High electron mobility field effect transistor (hemt) device
LB Chang, HC Chiu, YL Lee, CW Lin, A Das
US Patent App. 12/613,168, 2010
Ruthenium oxide metal nanocrystal capacitors with high-κ dielectric tunneling barriers for nanoscale nonvolatile memory device applications
A Das, S Maikap, CH Lin, PJ Tzeng, TC Tien, TY Wang, LB Chang, ...
Microelectronic engineering 87 (10), 1821-1827, 2010
Diffusivity–mobility relationship for heavily doped semiconductors exhibiting band tails
A Khan, A Das
Physica B: Condensed Matter 405 (3), 817-821, 2010
A high attenuation electromagnetic pulse protector with GDT, MOV and parallel coupled BPF on high thermal conductivity substrates
MJ Jeng, A Das, LB Chang, CC Lin, YC Ferng, CF Shih, SY Liao, ...
Progress In Electromagnetics Research 33, 73-81, 2012
Carrier concentrations in degenerate semiconductors having band gap narrowing
A Das, A Khan
Zeitschrift Für Naturforschung A 63 (3-4), 193-198, 2008
An observation of charge trapping phenomena in GaN/AlGaN/Gd2O3 MOS schottky structure
A Das, LB Chang, RM Lin, S Maikap
The 4th IEEE International NanoElectronics Conference, 1-2, 2011
Diffusivity-mobility relationship for heavily doped semiconductors with non-uniform band structures
A Khan, A Das
Zeitschrift für Naturforschung A 65 (10), 882-886, 2010
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