Atanu Das
Atanu Das
School of Aeronautics and Astronautics, Zhejiang University
Verified email at mx.nthu.edu.tw
Title
Cited by
Cited by
Year
Highly sensitive palladium oxide thin film extended gate FETs as pH sensor
A Das, DH Ko, CH Chen, LB Chang, CS Lai, FC Chu, L Chow, RM Lin
Sensors and Actuators B: Chemical 205, 199-205, 2014
832014
GaN thin film based light addressable potentiometric sensor for pH sensing application
A Das, A Das, LB Chang, CS Lai, RM Lin, FC Chu, YH Lin, L Chow, ...
Applied Physics Express 6 (3), 036601, 2013
402013
Atomic layer deposition of gallium oxide films as gate dielectrics in AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors
HY Shih, FC Chu, A Das, CY Lee, MJ Chen, RM Lin
Nanoscale Research Letters 11 (1), 235, 2016
382016
Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte
SZ Rahaman, S Maikap, A Das, A Prakash, YH Wu, CS Lai, TC Tien, ...
Nanoscale research letters 7 (1), 614, 2012
302012
High-κ HfO2 Nanocrystal Memory Capacitors Prepared by Phase Separation of Atomic-Layer-Deposited HfO2∕ Al2O3 Nanomixtures
S Maikap, A Das, TY Wang, TC Tien, LB Chang
Journal of the Electrochemical Society 156 (3), K28, 2009
242009
Fabrication and thermal analysis of flip-chip light-emitting diodes with different numbers of Au stub bumps
CC Lin, LB Chang, MJ Jeng, CY Yen, A Das, CY Tang, MY Tsai, MJ Lai
Microelectronics Reliability 50 (5), 683-687, 2010
202010
Magnetic quantization of the energy states in heavily doped semiconductors with nonparabolic energy bands
A Khan, A Das
Applied Physics A 89 (3), 695-699, 2007
172007
Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure
A Das, LB Chang, RM Lin
AIP Advances 2 (3), 032159, 2012
152012
An observation of charge trapping phenomena in structure
LB Chang, A Das, RM Lin, S Maikap, MJ Jeng, ST Chou
Applied Physics Letters 98 (22), 222106, 2011
132011
Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric
RM Lin, FC Chu, A Das, SY Liao, ST Chou, LB Chang
Thin Solid Films 544, 526-529, 2013
122013
Mobility–diffusivity relationship for heavily doped organic semiconductors
A Das, A Khan
Applied Physics A 93 (2), 527-532, 2008
102008
Physical and Memory Characteristics of Atomic-Layer-Deposited High-κ Hafnium–Aluminum-Oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate
A Das, S Maikap, WC Li, LB Chang, JR Yang
Japanese Journal of Applied Physics 48 (5S1), 05DF02, 2009
62009
Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal–Semiconductor–Metal Two-Dimensional Electron Gas Varactor
YC Ferng, LB Chang, A Das, CC Lin, CY Cheng, PY Kuei, L Chow
Japanese Journal of Applied Physics 51 (12R), 124201, 2012
52012
High electron mobility field effect transistor (hemt) device
LB Chang, HC Chiu, YL Lee, CW Lin, A Das
US Patent App. 12/613,168, 2010
52010
Ruthenium oxide metal nanocrystal capacitors with high-κ dielectric tunneling barriers for nanoscale nonvolatile memory device applications
A Das, S Maikap, CH Lin, PJ Tzeng, TC Tien, TY Wang, LB Chang, ...
Microelectronic engineering 87 (10), 1821-1827, 2010
42010
Diffusivity–mobility relationship for heavily doped semiconductors exhibiting band tails
A Khan, A Das
Physica B: Condensed Matter 405 (3), 817-821, 2010
42010
A high attenuation electromagnetic pulse protector with GDT, MOV and parallel coupled BPF on high thermal conductivity substrates
MJ Jeng, A Das, LB Chang, CC Lin, YC Ferng, CF Shih, SY Liao, ...
Progress In Electromagnetics Research 33, 73-81, 2012
32012
Carrier concentrations in degenerate semiconductors having band gap narrowing
A Das, A Khan
Zeitschrift Für Naturforschung A 63 (3-4), 193-198, 2008
32008
An observation of charge trapping phenomena in GaN/AlGaN/Gd2O3 MOS schottky structure
A Das, LB Chang, RM Lin, S Maikap
The 4th IEEE International NanoElectronics Conference, 1-2, 2011
22011
Diffusivity-mobility relationship for heavily doped semiconductors with non-uniform band structures
A Khan, A Das
Zeitschrift für Naturforschung A 65 (10), 882-886, 2010
22010
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Articles 1–20