Highly sensitive palladium oxide thin film extended gate FETs as pH sensor A Das, DH Ko, CH Chen, LB Chang, CS Lai, FC Chu, L Chow, RM Lin Sensors and Actuators B: Chemical 205, 199-205, 2014 | 144 | 2014 |
Atomic layer deposition of gallium oxide films as gate dielectrics in AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors HY Shih, FC Chu, A Das, CY Lee, MJ Chen, RM Lin Nanoscale Research Letters 11, 1-9, 2016 | 88 | 2016 |
GaN thin film based light addressable potentiometric sensor for pH sensing application A Das, A Das, LB Chang, CS Lai, RM Lin, FC Chu, YH Lin, L Chow, ... Applied Physics Express 6 (3), 036601, 2013 | 52 | 2013 |
Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte SZ Rahaman, S Maikap, A Das, A Prakash, YH Wu, CS Lai, TC Tien, ... Nanoscale Research Letters 7, 1-11, 2012 | 36 | 2012 |
High-κ HfO2 nanocrystal memory capacitors prepared by phase separation of atomic-layer-deposited HfO2∕ Al2O3 nanomixtures S Maikap, A Das, TY Wang, TC Tien, LB Chang Journal of the Electrochemical Society 156 (3), K28, 2009 | 27 | 2009 |
Fabrication and thermal analysis of flip-chip light-emitting diodes with different numbers of Au stub bumps CC Lin, LB Chang, MJ Jeng, CY Yen, A Das, CY Tang, MY Tsai, MJ Lai Microelectronics Reliability 50 (5), 683-687, 2010 | 20 | 2010 |
Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure A Das, LB Chang, RM Lin AIP Advances 2 (3), 2012 | 17 | 2012 |
An observation of charge trapping phenomena in GaN/AlGaN/Gd2O3/Ni–Au structure LB Chang, A Das, RM Lin, S Maikap, MJ Jeng, ST Chou Applied Physics Letters 98 (22), 2011 | 17 | 2011 |
Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric RM Lin, FC Chu, A Das, SY Liao, ST Chou, LB Chang Thin Solid Films 544, 526-529, 2013 | 16 | 2013 |
Magnetic quantization of the energy states in heavily doped semiconductors with nonparabolic energy bands A Khan, A Das Applied Physics A 89, 695-699, 2007 | 13 | 2007 |
Step-by-step monitoring of CVD-graphene during wet transfer by Raman spectroscopy Z Wu, X Zhang, A Das, J Liu, Z Zou, Z Zhang, Y Xia, P Zhao, H Wang Rsc Advances 9 (71), 41447-41452, 2019 | 12 | 2019 |
Mobility–diffusivity relationship for heavily doped organic semiconductors A Das, A Khan Applied Physics A 93, 527-532, 2008 | 11 | 2008 |
Study on medicinal plants used by Meitei community of Bishnupur district, Manipur AK Das, Y Tongbram International Journal of Current Research 6 (2), 5211-5219, 2014 | 7 | 2014 |
Physical and Memory Characteristics of Atomic-Layer-Deposited High-κ Hafnium–Aluminum-Oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate A Das, S Maikap, WC Li, LB Chang, JR Yang Japanese Journal of Applied Physics 48 (5S1), 05DF02, 2009 | 7 | 2009 |
Impact of paper mill effluent on aquatic environment at discharge site in Kole beel, West Bengal MK Bandyopadhyay, AK Das J. Inland. Fish. Soc, 80-85, 1998 | 7 | 1998 |
Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal–Semiconductor–Metal Two-Dimensional Electron Gas Varactor YC Ferng, LB Chang, A Das, CC Lin, CY Cheng, PY Kuei, L Chow Japanese Journal of Applied Physics 51 (12R), 124201, 2012 | 5 | 2012 |
Ruthenium oxide metal nanocrystal capacitors with high-κ dielectric tunneling barriers for nanoscale nonvolatile memory device applications A Das, S Maikap, CH Lin, PJ Tzeng, TC Tien, TY Wang, LB Chang, ... Microelectronic engineering 87 (10), 1821-1827, 2010 | 5 | 2010 |
High electron mobility field effect transistor (hemt) device LB Chang, HC Chiu, YL Lee, CW Lin, A Das US Patent App. 12/613,168, 2010 | 5 | 2010 |
Diffusivity–mobility relationship for heavily doped semiconductors exhibiting band tails A Khan, A Das Physica B: Condensed Matter 405 (3), 817-821, 2010 | 5 | 2010 |
Carrier concentrations in degenerate semiconductors having band gap narrowing A Das, A Khan Zeitschrift Für Naturforschung A 63 (3-4), 193-198, 2008 | 4 | 2008 |