Dr. Sk. Ziaur Rahaman
Dr. Sk. Ziaur Rahaman
Industrial Technology Research Institute, Electronic and Optoelectronic System Research Laboratories
Verified email at itri.org.tw
Title
Cited by
Cited by
Year
Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface
SZ Rahaman, S Maikap, TC Tien, HY Lee, WS Chen, FT Chen, MJ Kao, ...
Nanoscale research letters 7 (1), 345, 2012
722012
Conductive-bridging random access memory: challenges and opportunity for 3D architecture
D Jana, S Roy, R Panja, M Dutta, SZ Rahaman, R Mahapatra, S Maikap
Nanoscale Research Letters 10 (1), 188, 2015
632015
Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film
SZ Rahaman, S Maikap, WS Chen, HY Lee, FT Chen, MJ Kao, MJ Tsai
Applied Physics Letters 101 (7), 073106, 2012
592012
Bipolar resistive switching memory using Cu metallic filament in Ge0. 4Se0. 6 solid electrolyte
SZ Rahaman, S Maikap, HC Chiu, CH Lin, TY Wu, YS Chen, PJ Tzeng, ...
Electrochemical and Solid State Letters 13 (5), H159, 2010
532010
Novel Defects-TrappingRRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current
YS Chen, HY Lee, PS Chen, WS Chen, KH Tsai, PY Gu, TY Wu, CH Tsai, ...
IEEE Electron Device Letters 35 (2), 202-204, 2014
472014
Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament
SZ Rahaman, S Maikap, WS Chen, HY Lee, FT Chen, TC Tien, MJ Tsai
Journal of Applied Physics 111 (6), 063710, 2012
442012
Nanoscale (EOT= 5.6 nm) nonvolatile memory characteristics using n-Si/SiO2/HfAlO nanocrystal/Al2O3/Pt capacitors
S Maikap, SZ Rahaman, TC Tien
Nanotechnology 19 (43), 435202, 2008
382008
Improved resistive switching memory characteristics using core-shell IrOx nano-dots in Al2O3/WOx bilayer structure
W Banerjee, S Maikap, SZ Rahaman, A Prakash, TC Tien, WC Li, ...
Journal of The Electrochemical Society 159 (2), H177, 2011
312011
Resistive switching memory characteristics of Ge/GeO x nanowires and evidence of oxygen ion migration
A Prakash, S Maikap, SZ Rahaman, S Majumdar, S Manna, SK Ray
Nanoscale research letters 8 (1), 220, 2013
302013
Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte
SZ Rahaman, S Maikap, A Das, A Prakash, YH Wu, CS Lai, TC Tien, ...
Nanoscale research letters 7 (1), 614, 2012
302012
Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure
S Chakrabarti, S Samanta, S Maikap, SZ Rahaman, HM Cheng
Nanoscale research letters 11 (1), 389, 2016
242016
High-κ Al2O3/WOx bilayer dielectrics for low-power resistive switching memory applications
W Banerjee, SZ Rahaman, A Prakash, S Maikap
Japanese Journal of Applied Physics 50 (10S), 10PH01, 2011
242011
The role of Ti buffer layer thickness on the resistive switching properties of hafnium oxide-based resistive switching memories
SZ Rahaman, YD Lin, HY Lee, YS Chen, PS Chen, WS Chen, CH Hsu, ...
Langmuir 33 (19), 4654-4665, 2017
212017
Understanding of multi-level resistive switching mechanism in GeO x through redox reaction in H 2 O 2/sarcosine prostate cancer biomarker detection
S Samanta, SZ Rahaman, A Roy, S Jana, S Chakrabarti, R Panja, S Roy, ...
Scientific reports 7 (1), 1-12, 2017
182017
Excellent uniformity and multilevel operation in formation-free low power resistive switching memory using IrOx/AlOx/W cross-point
W Banerjee, SZ Rahaman, S Maikap
Japanese Journal of Applied Physics 51 (4S), 04DD10, 2012
182012
Improved resistive switching memory characteristics using novel bi-layered Ge0.2Se0.8/Ta2O5solid-electrolytes
SZ Rahaman, S Maikap
2010 IEEE International Memory Workshop, 1-4, 2010
142010
Low power resistive switching memory using Cu metallic filament in Ge0. 2Se0. 8 solid-electrolyte
SZ Rahaman, S Maikap
Microelectronics Reliability 50 (5), 643-646, 2010
132010
Low current (5 pA) resistive switching memory using high-к Ta2O5solid electrolyte
S Maikap, SZ Rahaman, TY Wu, F Chen, MJ Kao, MJ Tsai
2009 Proceedings of the European Solid State Device Research Conference, 217-220, 2009
122009
Scalability and reliability issues of Ti/HfOx-based 1T1R bipolar RRAM: Occurrence, mitigation, and solution
SZ Rahaman, HY Lee, YS Chen, YD Lin, PS Chen, WS Chen, PH Wang
Applied Physics Letters 110 (21), 213501, 2017
112017
Record resistance ratio and bipolar/unipolar resistive switching characteristics of memory device using germanium oxide solid electrolyte
SZ Rahaman, S Maikap, SK Ray, HY Lee, WS Chen, FT Chen, MJ Kao, ...
Japanese Journal of Applied Physics 51 (4S), 04DD11, 2012
112012
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