| Conductive-bridging random access memory: challenges and opportunity for 3D architecture D Jana, S Roy, R Panja, M Dutta, SZ Rahaman, R Mahapatra, S Maikap Nanoscale research letters 10, 1-23, 2015 | 101 | 2015 |
| Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface SZ Rahaman, S Maikap, TC Tien, HY Lee, WS Chen, FT Chen, MJ Kao, ... Nanoscale research letters 7, 1-11, 2012 | 94 | 2012 |
| Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film SZ Rahaman, S Maikap, WS Chen, HY Lee, FT Chen, MJ Kao, MJ Tsai Applied Physics Letters 101 (7), 2012 | 70 | 2012 |
| Bipolar resistive switching memory using Cu metallic filament in Ge0. 4Se0. 6 solid electrolyte SZ Rahaman, S Maikap, HC Chiu, CH Lin, TY Wu, YS Chen, PJ Tzeng, ... Electrochemical and Solid-State Letters 13 (5), H159, 2010 | 63 | 2010 |
| The role of Ti buffer layer thickness on the resistive switching properties of hafnium oxide-based resistive switching memories SZ Rahaman, YD Lin, HY Lee, YS Chen, PS Chen, WS Chen, CH Hsu, ... Langmuir 33 (19), 4654-4665, 2017 | 60 | 2017 |
| Novel Defects-Trapping RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current YS Chen, HY Lee, PS Chen, WS Chen, KH Tsai, PY Gu, TY Wu, CH Tsai, ... IEEE Electron Device Letters 35 (2), 202-204, 2013 | 59 | 2013 |
| Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament SZ Rahaman, S Maikap, WS Chen, HY Lee, FT Chen, TC Tien, MJ Tsai Journal of Applied Physics 111 (6), 2012 | 57 | 2012 |
| Resistive switching memory characteristics of Ge/GeO x nanowires and evidence of oxygen ion migration A Prakash, S Maikap, SZ Rahaman, S Majumdar, S Manna, SK Ray Nanoscale research letters 8, 1-10, 2013 | 51 | 2013 |
| Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure S Chakrabarti, S Samanta, S Maikap, SZ Rahaman, HM Cheng Nanoscale research letters 11, 1-8, 2016 | 47 | 2016 |
| Pulse-width and temperature effect on the switching behavior of an etch-stop-on-MgO-barrier spin-orbit torque MRAM cell SZ Rahaman, IJ Wang, TY Chen, CF Pai, DY Wang, JH Wei, HH Lee, ... IEEE Electron Device Letters 39 (9), 1306-1309, 2018 | 39 | 2018 |
| Improved resistive switching memory characteristics using core-shell IrOx nano-dots in Al2O3/WOx bilayer structure W Banerjee, S Maikap, SZ Rahaman, A Prakash, TC Tien, WC Li, ... Journal of The Electrochemical Society 159 (2), H177, 2011 | 39 | 2011 |
| Nanoscale (EOT= 5.6 nm) nonvolatile memory characteristics using n-Si/SiO2/HfAlO nanocrystal/Al2O3/Pt capacitors S Maikap, SZ Rahaman, TC Tien Nanotechnology 19 (43), 435202, 2008 | 39 | 2008 |
| Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection S Samanta, SZ Rahaman, A Roy, S Jana, S Chakrabarti, R Panja, S Roy, ... Scientific Reports 7 (1), 11240, 2017 | 38 | 2017 |
| Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte SZ Rahaman, S Maikap, A Das, A Prakash, YH Wu, CS Lai, TC Tien, ... Nanoscale Research Letters 7, 1-11, 2012 | 36 | 2012 |
| High-κ Al2O3/WOx bilayer dielectrics for low-power resistive switching memory applications W Banerjee, SZ Rahaman, A Prakash, S Maikap Japanese Journal of Applied Physics 50 (10S), 10PH01, 2011 | 35 | 2011 |
| Excellent uniformity and multilevel operation in formation-free low power resistive switching memory using IrOx/AlOx/W cross-point W Banerjee, SZ Rahaman, S Maikap Japanese Journal of Applied Physics 51 (4S), 04DD10, 2012 | 27 | 2012 |
| Scalability and reliability issues of Ti/HfOx-based 1T1R bipolar RRAM: Occurrence, mitigation, and solution SZ Rahaman, HY Lee, YS Chen, YD Lin, PS Chen, WS Chen, PH Wang Applied Physics Letters 110 (21), 2017 | 20 | 2017 |
| Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics YD Lin, PS Chen, HY Lee, YS Chen, SZ Rahaman, KH Tsai, CH Hsu, ... Nanoscale research letters 12, 1-6, 2017 | 19 | 2017 |
| Resistance instabilities in a filament-based resistive memory FT Chen, HY Lee, YS Chen, SZ Rahaman, CH Tsai, KH Tsai, TY Wu, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 1.1-5E. 1.7, 2013 | 17 | 2013 |
| Bipolar resistive switching memory characteristics using Al/Cu/GeOx/W memristor S Maikap, SZ Rahaman ECS Transactions 45 (6), 257, 2012 | 17 | 2012 |
Siddheswar MaikapProfessor of Electronics Engineering, Chang Gung UniversityVerified email at mail.cgu.edu.tw
