| Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications Y Lu, T Zhong, W Hsu, S Kim, X Lu, JJ Kan, C Park, WC Chen, X Li, X Zhu, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2015 | 67 | 2015 |
| Performance, power, and reliability tradeoffs of STT-RAM cell subject to architecture-level requirement H Li, X Wang, ZL Ong, WF Wong, Y Zhang, P Wang, Y Chen IEEE Transactions on Magnetics 47 (10), 2356-2359, 2011 | 48 | 2011 |
| Radiation-induced soft error analysis of STT-MRAM: A device to circuit approach J Yang, P Wang, Y Zhang, Y Cheng, W Zhao, Y Chen, HH Li IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2015 | 36 | 2015 |
| A thermal and process variation aware MTJ switching model and its applications in soft error analysis P Wang, W Zhang, R Joshi, R Kanj, Y Chen Proceedings of the International Conference on Computer-Aided Design, 720-727, 2012 | 34 | 2012 |
| High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array JJ Kan, C Park, P Wang, KIM Sungryul, SH Kang US Patent 10,381,060, 2019 | 23 | 2019 |
| A 1.0 V 45nm nonvolatile magnetic latch design and its robustness analysis P Wang, X Chen, Y Chen, H Li, S Kang, X Zhu, W Wu 2011 IEEE Custom Integrated Circuits Conference (CICC), 1-4, 2011 | 21 | 2011 |
| Switched capacitor transmitter circuits and methods DK Butterfield, P Wang, JD Dunworth US Patent 9,520,906, 2016 | 16 | 2016 |
| An adaptive 3T-3MTJ memory cell design for STT-MRAM-based LLCs L Xue, B Wu, B Zhang, Y Cheng, P Wang, C Park, J Kan, SH Kang, Y Xie IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (3), 484-495, 2018 | 15 | 2018 |
| ODESY: A novel 3T-3MTJ cell design with optimized area density, scalability and latency L Xue, Y Cheng, J Yang, P Wang, Y Xie 2016 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 1-8, 2016 | 13 | 2016 |
| Physically unclonable function based on comparison of MTJ resistances P Wang, JP Kim, JJ Kan, C Park, S Kang US Patent 9,870,811, 2018 | 12 | 2018 |
| Message-based key generation using physical unclonable function (PUF) P Wang, C Park, JJ Kan, SH Kang US Patent 10,547,460, 2020 | 10 | 2020 |
| System and method to generate a random number JJ Kan, C Park, P Wang, SH Kang US Patent 9,824,735, 2017 | 9 | 2017 |
| Switched capacitor transmitter circuits and methods DK Butterfield, P Wang, JD Dunworth US Patent 9,531,409, 2016 | 9 | 2016 |
| Contactless data communication using in-plane magnetic fields, and related systems and methods W Wu, SK Govindaswamy, RS Madala, P Wang, KHL Yuen, ... US Patent 9,495,899, 2016 | 9 | 2016 |
| Method and apparatus for generating random numbers using a physical entropy source W Wu, P Wang, RS Madala, SK Govindaswamy, KH Yuen, RP Gilmore, ... US Patent 9,164,729, 2015 | 6 | 2015 |
| Probabilistic design in spintronic memory and logic circuit Y Chen, Y Zhang, P Wang 17th Asia and South Pacific Design Automation Conference, 323-328, 2012 | 6 | 2012 |
| Universal statistical cure for predicting memory loss R Joshi, R Kanj, P Wang, H Li 2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 236-239, 2011 | 5 | 2011 |
| Nonpersistent errors optimization in spin-MOS logic and storage circuitry P Wang, X Wang, Y Zhang, H Li, SP Levitan, Y Chen IEEE transactions on magnetics 47 (10), 3860-3863, 2011 | 5 | 2011 |
| Magnetic tunneling junction non-volatile register with feedback for robust read and write operations Z Sun, RS Madala, SK Govindaswamy, KH Yuen, W Wu, P Wang US Patent 9,147,454, 2015 | 3 | 2015 |
| Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory C Park, JJ Kan, P Wang, SH Kang US Patent 10,431,734, 2019 | 2 | 2019 |
Yiran ChenProfessor, Electrical and Computer Engineering, Duke UniversityVerified email at duke.edu
