| RRAM characteristics using a new Cr/GdOx/TiN structure D Jana, M Dutta, S Samanta, S Maikap Nanoscale research letters 9, 1-9, 2014 | 91 | 2014 |
| Realization of Artificial Neuron using MXene Bi-Directional Threshold Switching Memristors YT Yihao Chen, Yu Wang, Yuhao Luo, Xinwei Liu, Yuqi Wang, Fei Gao, Jianguang ... IEEE Electron Device Letters, 2019 | 68 | 2019 |
| Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure DJ Subhranu Samanta, Siddheswar Maikap, Hsin-Ming Cheng Applied Physics Letters 108 (1), 011605, 2016 | 60 | 2016 |
| Low Subthreshold Swing and High Mobility Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistor with Thin HfO2 Gate Dielectric and Excellent Uniformity S Samanta, U Chand, X Shengqiang, H Kaizhen, W Ying, W Chengkuan, ... IEEE Electron Device Letters, 2020 | 52 | 2020 |
| Amorphous IGZO TFTs featuring Extremely-Scaled Channel Thickness and 38 nm Channel Length: Achieving Record High Gm,max of 125 µS/µm at VDS of 1 V and ION of 350 µA/µm S Samanta, K Han, C Sun, C Wang, AVY Thean, X Gong VLSI Symposia on Technology and Circuits, 2020 | 51 | 2020 |
| Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure S Chakrabarti, S Samanta, S Maikap, SZ Rahaman, HM Cheng Nanoscale research letters 11, 1-8, 2016 | 47 | 2016 |
| Controlling resistive switching by using optimized MoS2 interfacial layer and the role of top electrodes on ascorbic acid sensing in TaOx-based RRAM JT Qiu, S Samanta, M Dutta, G Sreekanth, S Maikap Langmuir, 2019 | 44 | 2019 |
| First Demonstration of BEOL-Compatible Ferroelectric TCAM Featuring a-IGZO Fe-TFTs with Large Memory Window of 2.9 V, Scaled Channel Length of 40 nm, and High Endurance of 108 … S Chen, K Han, S Samanta, Q Kong, J Zhang, H Xu, W Xinke, A Kumar, ... 2021 Symposium on VLSI Technology, T7-4, 2021 | 39 | 2021 |
| Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection S Samanta, SZ Rahaman, A Roy, S Jana, ... Scientific Reports 7, 2017 | 37 | 2017 |
| First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300 μA/μm K Han, Q Kong, K Yuye, S Chen, W Chengkuan, Z Jishen, X Haiwen, ... 2021 Symposium on VLSI Technology, T10-1, 2021 | 32 | 2021 |
| Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure S Chakrabarti, R Panja, S Roy, A Roy, S Samanta, M Dutta, S Ginnaram, ... Applied Surface Science 433, 51-59, 2018 | 30 | 2018 |
| Self-compliance-improved resistive switching using Ir/TaO x /W cross-point memory A Prakash, D Jana, S Samanta, S Maikap Nanoscale research letters 8, 1-6, 2013 | 30 | 2013 |
| Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure D Jana, S Samanta, S Roy, YF Lin, S Maikap Nano-Micro Letters 7, 392-399, 2015 | 28 | 2015 |
| Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors with a Metal-Ferroelectric-Metal-Insulator-Semicondu ctor Structure S Chen, Z Zijie, H Kaizhen, S Samanta, Z Jiuren, K Qiwen, Z Jishen, ... IEEE Electron Device Letters, 2021 | 25 | 2021 |
| Scalable cross-point resistive switching memory and mechanism through understanding of H2O2/glucose sensing by using IrOx/Al2O3/W structure S Chakrabarti, S Maikap, S Samanta, S Jana, A Roy, JT Qiu Physical Chemistry Chemical Physics, 2017 | 24 | 2017 |
| Amorphous InGaZnO thin-film transistors with sub-10-nm channel thickness and ultrascaled channel length S Samanta, K Han, C Sun, C Wang, A Kumar, AVY Thean, X Gong IEEE Transactions on Electron Devices 68 (3), 1050-1056, 2021 | 22 | 2021 |
| Effects of W/Ir Top Electrode on Resistive Switching and Dopamine Sensing by Using Optimized TaOx-Based Memory Platform S Samanta, S Maikap, A Roy, S Jana, JT Qiu Advanced Materials Interfaces 1700959, 1-11, 2017 | 22 | 2017 |
| Cross-Point Resistive Switching Memory and Urea Sensing by Using Annealed GdOx Film in IrOx/GdOx/W Structure for Biomedical Applications JRY Pankaj Kumar, Siddheswar Maikap, Sreekanth Ginnaram, Jian-Tai Qiu ... Journal of The Electrochemical Society 164 (4), B127-B135, 2017 | 20 | 2017 |
| Manipulation of the electrical behaviors of Cu/MXene/SiO2/W memristor Y Wang, X Liu, Y Chen, W Xu, D Liang, F Gao, M Zhang, S Samanta, ... Applied Physics Express 12 (10), 106504, 2019 | 18 | 2019 |
| Highly scaled InGaZnO ferroelectric field-effect transistors and ternary content-addressable memory C Sun, K Han, S Samanta, Q Kong, J Zhang, H Xu, X Wang, A Kumar, ... IEEE Transactions on Electron Devices 69 (9), 5262-5269, 2022 | 17 | 2022 |
