| Few-layer phosphorene: An ideal 2D material for tunnel transistors TA Ameen, H Ilatikhameneh, G Klimeck, R Rahman Scientific reports 6 (1), 28515, 2016 | 110 | 2016 |
| Dielectric engineered tunnel field-effect transistor H Ilatikhameneh, TA Ameen, G Klimeck, J Appenzeller, R Rahman IEEE Electron Device Letters 36 (10), 1097-1100, 2015 | 96 | 2015 |
| Saving Moore’s law down to 1 nm channels with anisotropic effective mass H Ilatikhameneh, T Ameen, B Novakovic, Y Tan, G Klimeck, R Rahman Scientific reports 6 (1), 31501, 2016 | 86 | 2016 |
| Complementary black phosphorus tunneling field-effect transistors P Wu, T Ameen, H Zhang, LA Bendersky, H Ilatikhameneh, G Klimeck, ... ACS nano 13 (1), 377-385, 2018 | 78 | 2018 |
| Thickness engineered tunnel field-effect transistors based on phosphorene FW Chen, H Ilatikhameneh, TA Ameen, G Klimeck, R Rahman IEEE Electron Device Letters 38 (1), 130-133, 2016 | 65 | 2016 |
| Dramatic impact of dimensionality on the electrostatics of PN junctions and its sensing and switching applications H Ilatikhameneh, T Ameen, F Chen, H Sahasrabudhe, G Klimeck, ... IEEE Transactions on Nanotechnology 17 (2), 293-298, 2018 | 38 | 2018 |
| Combination of equilibrium and nonequilibrium carrier statistics into an atomistic quantum transport model for tunneling heterojunctions TA Ameen, H Ilatikhameneh, JZ Huang, M Povolotskyi, R Rahman, ... IEEE Transactions on Electron Devices 64 (6), 2512-2518, 2017 | 25 | 2017 |
| WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing CS Pang, CY Chen, T Ameen, S Zhang, H Ilatikhameneh, R Rahman, ... Small 15 (41), 1902770, 2019 | 23 | 2019 |
| Polarization dependence of absorption by bound electrons in self-assembled quantum dots TA Ameen, YM El-Batawy Journal of Applied Physics 113 (19), 193102, 2013 | 23 | 2013 |
| A multiscale modeling of triple-heterojunction tunneling FETs JZ Huang, P Long, M Povolotskyi, H Ilatikhameneh, TA Ameen, ... IEEE Transactions on Electron Devices 64 (6), 2728-2735, 2017 | 22 | 2017 |
| Alloy engineered nitride tunneling field-effect transistor: A solution for the challenge of heterojunction tfets TA Ameen, H Ilatikhameneh, P Fay, A Seabaugh, R Rahman, G Klimeck IEEE Transactions on Electron Devices 66 (1), 736-742, 2018 | 21 | 2018 |
| Sensitivity challenge of steep transistors H Ilatikhameneh, TA Ameen, CY Chen, G Klimeck, R Rahman IEEE Transactions on Electron Devices 65 (4), 1633-1639, 2018 | 19 | 2018 |
| Channel thickness optimization for ultrathin and 2-D chemically doped TFETs CY Chen, TA Ameen, H Ilatikhameneh, R Rahman, G Klimeck, ... IEEE Transactions on Electron Devices 65 (10), 4614-4621, 2018 | 15 | 2018 |
| Universal behavior of atomistic strain in self-assembled quantum dots H Ilatikhameneh, TA Ameen, G Klimeck, R Rahman IEEE Journal of Quantum Electronics 52 (7), 1-8, 2016 | 15 | 2016 |
| Modeling light absorption by bound electrons in self-assembled quantum dots TA Ameen, YM El-Batawy, AA Abouelsaood Journal of Applied Physics 113 (8), 083101, 2013 | 15 | 2013 |
| Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors TA Ameen, YM El-Batawy, AA Abouelsaood Journal of Applied Physics 115 (6), 063703, 2014 | 13 | 2014 |
| Novel III-N heterostructure devices for low-power logic and more P Fay, W Li, L Cao, K Pourang, SM Islam, C Lund, S Saima, ... 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 767-769, 2016 | 6 | 2016 |
| Bound to continuum absorption coefficient for spherical and conical quantum dots TA Ameen, YM El-Batawy Optical and Quantum Electronics 47, 149-157, 2015 | 6 | 2015 |
| Doping profile engineered triple heterojunction TFETs with 12-nm body thickness CY Chen, HY Tseng, H Ilatikhameneh, TA Ameen, G Klimeck, MJ Rodwell, ... IEEE Transactions on Electron Devices 68 (6), 3104-3111, 2021 | 5 | 2021 |
| Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots T Ameen, H Ilatikhameneh, J Charles, Y Hsueh, S Chen, J Fonseca, ... 14th IEEE International Conference on Nanotechnology, 921-924, 2014 | 5 | 2014 |
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
