| Ultralow specific on-resistance high-voltage SOI lateral MOSFET X Luo, J Fan, Y Wang, T Lei, M Qiao, B Zhang, F Udrea IEEE Electron Device Letters 32 (2), 185-187, 2011 | 95 | 2011 |
| A 700-V junction-isolated triple RESURF LDMOS with N-type top layer M Qiao, Y Li, X Zhou, Z Li, B Zhang IEEE Electron Device Letters 35 (7), 774-776, 2014 | 69 | 2014 |
| High-voltage technology based on thin layer SOI for driving plasma display panels M Qiao, B Zhang, Z Xiao, J Fang, Z Li Power Semiconductor Devices and IC's, 2008. ISPSD'08. 20th International …, 2008 | 44 | 2008 |
| Novel Superjunction LDMOS (> 950 V) With a Thin Layer SOI W Zhang, Z Zhan, Y Yu, S Cheng, Y Gu, S Zhang, X Luo, Z Li, M Qiao, Z Li, ... IEEE Electron Device Letters 38 (11), 1555-1558, 2017 | 41 | 2017 |
| A 0.35 μm 700 V BCD technology with self-isolated and non-isolated ultra-low specific on-resistance DB-nLDMOS K Mao, M Qiao, L Jiang, H Jiang, Z Li, W Chen, Z Li, B Zhang Power Semiconductor Devices and ICs (ISPSD), 2013 25th International …, 2013 | 41 | 2013 |
| A novel substrate-assisted RESURF technology for small curvature radius junction M Qiao, X Hu, H Wen, M Wang, B Luo, X Luo, Z Wang, B Zhang, Z Li Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International …, 2011 | 41 | 2011 |
| 300-V high-side thin-layer-SOI field pLDMOS with multiple field plates based on field implant technology M Qiao, X Zhou, Y He, H Wen, Y Zhao, B Zhang, Z Li IEEE Electron Device Letters 33 (10), 1438-1440, 2012 | 37 | 2012 |
| Band-to-band tunneling injection insulated-gate bipolar transistor with a soft reverse-recovery built-in diode H Jiang, J Wei, B Zhang, W Chen, M Qiao, Z Li IEEE Electron Device Letters 33 (12), 1684-1686, 2012 | 36 | 2012 |
| Analytical modeling for a novel triple RESURF LDMOS with N-top layer M Qiao, Y Wang, X Zhou, F Jin, H Wang, Z Wang, Z Li, B Zhang IEEE Transactions on Electron Devices 62 (9), 2933-2939, 2015 | 33 | 2015 |
| Equivalent substrate model for lateral super junction device B Zhang, W Zhang, Z Li, M Qiao, Z Li IEEE Transactions on Electron Devices 61 (2), 525-532, 2014 | 33 | 2014 |
| Analysis of back-gate effect on breakdown behaviour of over 600 V SOI LDMOS transistors M Qiao, B Zhang, ZJ Li, J Fang Electronics Letters 43 (22), 1231-1233, 2007 | 32 | 2007 |
| Theory of superjunction with NFD and FD modes based on normalized breakdown voltage W Zhang, B Zhang, Z Li, M Qiao, Z Li IEEE Transactions on Electron Devices 62 (12), 4114-4120, 2015 | 31 | 2015 |
| Ultra-low specific on-resistance SOI high voltage trench LDMOS with dielectric field enhancement based on ENBULF concept W Zhang, M Qiao, L Wu, K Ye, Z Wang, Z Wang, X Luo, S Zhang, W Su, ... Power Semiconductor Devices and ICs (ISPSD), 2013 25th International …, 2013 | 30 | 2013 |
| High-voltage thick layer SOI technology for PDP scan driver IC M Qiao, L Jiang, M Wang, Y Huang, H Liao, T Liang, Z Sun, B Zhang, Z Li, ... Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International …, 2011 | 28 | 2011 |
| A novel vertical field plate lateral device with ultralow specific on-resistance W Zhang, B Zhang, M Qiao, L Wu, K Mao, Z Li IEEE Transactions on Electron Devices 61 (2), 518-524, 2014 | 27 | 2014 |
| Non-full depletion mode and its experimental realization of the lateral superjunction W Zhang, S Pu, C Lai, L Ye, S Cheng, S Zhang, B He, Z Wang, X Luo, ... 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 24 | 2018 |
| Best-in-class LDMOS with ultra-shallow trench isolation and p-buried layer from 18V to 40V in 0.18 μm BCD technology F Jin, D Liu, J Xing, X Yang, J Yang, W Qian, W Yue, P Wang, M Qiao, ... Power Semiconductor Devices and IC's (ISPSD), 2017 29th International …, 2017 | 24 | 2017 |
| Optimization of lateral superjunction based on the minimum specific ON-resistance W Zhang, B Zhang, M Qiao, Z Li, X Luo, Z Li IEEE Transactions on Electron Devices 63 (5), 1984-1990, 2016 | 24 | 2016 |
| Total-Ionizing-Dose Irradiation Induced Dielectric Field Enhancement for High Voltage SOI LDMOS X Zhou, ZY Yuan, L Shu, M Qiao, Z Lu, Y Zhao, Z Li, B Zhang IEEE Electron Device Letters, 2019 | 23 | 2019 |
| 250 V Thin-Layer SOI Technology With Field pLDMOS for High-Voltage Switching IC M Qiao, K Zhang, X Zhou, J Zou, B Zhang, Z Li IEEE Transactions on Electron Devices 62 (6), 1970-1976, 2015 | 23 | 2015 |
Bo Zhang （张波）,ProfessorUniv. of Electron. Sci. & Technol. of ChinaVerified email at uestc.edu.cn
