Can Bayram
TitleCited byYear
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
J Kim, C Bayram, H Park, CW Cheng, C Dimitrakopoulos, JA Ott, ...
Nature communications 5, 4836, 2014
1912014
Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes
R McClintock, JL Pau, K Minder, C Bayram, P Kung, M Razeghi
Applied physics letters 90, 141112, 2007
1072007
Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes
C Bayram, Z Vashaei, M Razeghi
Applied Physics Letters 97 (18), 181109-181109-3, 2010
862010
A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN
C Bayram, FH Teherani, DJ Rogers, M Razeghi
Applied Physics Letters 93, 081111, 2008
852008
High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology
D Shahrjerdi, SW Bedell, C Ebert, C Bayram, B Hekmatshoar, K Fogel, ...
Applied Physics Letters 100 (5), 053901-053901-3, 2012
832012
AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition
C Bayram, Z Vashaei, M Razeghi
Applied Physics Letters 96 (4), 042103-042103-3, 2010
812010
Back-illuminated separate absorption and multiplication GaN avalanche photodiodes
JL Pau, C Bayram, R McClintock, M Razeghi, D Silversmith
Applied Physics Letters 92, 101120, 2008
682008
Geiger-mode operation of back-illuminated GaN avalanche photodiodes
JL Pau, R McClintock, K Minder, C Bayram, P Kung, M Razeghi, E Muņoz, ...
Applied Physics Letters 91, 041104, 2007
592007
Delta-doping optimization for high quality p-type GaN
C Bayram, JL Pau, R McClintock, M Razeghi
Journal of Applied Physics 104 (8), 083512-083512-5, 2008
582008
Ultralight High‐Efficiency Flexible InGaP/(In) GaAs Tandem Solar Cells on Plastic
D Shahrjerdi, SW Bedell, C Bayram, CC Lubguban, K Fogel, P Lauro, ...
Advanced Energy Materials 3 (5), 566-571, 2013
552013
Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates
E Cicek, Z Vashaei, R McClintock, C Bayram, M Razeghi
Applied Physics Letters 96, 261107, 2010
552010
Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
C Bayram, Z Vashaei, M Razeghi
Applied Physics Letters 97, 092104, 2010
542010
Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping
C Bayram, JL Pau, R McClintock, M Razeghi
Applied Physics Letters 92, 241103, 2008
472008
Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature
Z Vashaei, C Bayram, M Razeghi
Journal of Applied Physics 107 (8), 083505-083505-5, 2010
452010
Scaling in back-illuminated GaN avalanche photodiodes
K Minder, JL Pau, R McClintock, P Kung, C Bayram, M Razeghi, ...
Applied Physics Letters 91, 073513, 2007
452007
Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si (111)
Y Zhang, S Gautier, CY Cho, E Cicek, Z Vashaei, R McClintock, C Bayram, ...
Applied Physics Letters 102 (1), 011106, 2013
442013
GaN avalanche photodiodes grown on m-plane freestanding GaN substrate
Z Vashaei, E Cicek, C Bayram, R McClintock, M Razeghi
Applied Physics Letters 96, 201908, 2010
412010
Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations
HP Lee, J Perozek, LD Rosario, C Bayram
Scientific reports 6, 37588, 2016
332016
Stranski–Krastanov growth of InGaN quantum dots emitting in green spectra
C Bayram, M Razeghi
Appl Phys A 96 (2), 403, 2009
332009
Cubic Phase GaN on Nano‐grooved Si (100) via Maskless Selective Area Epitaxy
C Bayram, JA Ott, KT Shiu, CW Cheng, Y Zhu, J Kim, M Razeghi, ...
Advanced Functional Materials 24 (28), 4492-4496, 2014
32*2014
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Articles 1–20