| KNACK: A hybrid spin-charge mixed-mode simulator for evaluating different genres of spin-transfer torque MRAM bit-cells X Fong, SK Gupta, NN Mojumder, SH Choday, C Augustine, K Roy 2011 International Conference on Simulation of Semiconductor Processes and …, 2011 | 184 | 2011 |
| A three-terminal dual-pillar STT-MRAM for high-performance robust memory applications NN Mojumder, SK Gupta, SH Choday, DE Nikonov, K Roy IEEE transactions on electron devices 58 (5), 1508-1516, 2011 | 132 | 2011 |
| Future cache design using STT MRAMs for improved energy efficiency: Devices, circuits and architecture SP Park, S Gupta, N Mojumder, A Raghunathan, K Roy Proceedings of the 49th Annual Design Automation Conference, 492-497, 2012 | 131 | 2012 |
| Layout-aware optimization of STT MRAMs SK Gupta, SP Park, NN Mojumder, K Roy 2012 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2012 | 103 | 2012 |
| Spin-transfer torque MRAMs for low power memories: Perspective and prospective C Augustine, NN Mojumder, X Fong, SH Choday, SP Park, K Roy IEEE Sensors Journal 12 (4), 756-766, 2011 | 74 | 2011 |
| Band-to-band tunneling ballistic nanowire FET: Circuit-compatible device modeling and design of ultra-low-power digital circuits and memories NN Mojumder, K Roy IEEE transactions on electron devices 56 (10), 2193-2201, 2009 | 69 | 2009 |
| Memory device with adaptive voltage scaling based on error information Z Wang, NN Mojumder, J Liu, C fei Yeap US Patent 9,786,356, 2017 | 60 | 2017 |
| Effect of quantum confinement on spin transport and magnetization dynamics in dual barrier spin transfer torque magnetic tunnel junctions NN Mojumder, C Augustine, DE Nikonov, K Roy Journal of Applied Physics 108 (10), 2010 | 52 | 2010 |
| Holistic technology optimization and key enablers for 7nm mobile SoC SC Song, J Xu, NN Mojumder, K Rim, D Yang, J Bao, J Zhu, J Wang, ... 2015 Symposium on VLSI Technology (VLSI Technology), T198-T199, 2015 | 43 | 2015 |
| High density static random access memory array having advanced metal patterning N Mojumder, SS Song, Z Wang, C fei Yeap US Patent 9,318,564, 2016 | 42 | 2016 |
| Proposal for switching current reduction using reference layer with tilted magnetic anisotropy in magnetic tunnel junctions for spin-transfer torque (STT) MRAM NN Mojumder, K Roy IEEE Transactions on Electron Devices 59 (11), 3054-3060, 2012 | 38 | 2012 |
| Magnonic spin-transfer torque MRAM with low power, high speed, and error-free switching NN Mojumder, DW Abraham, K Roy, DC Worledge IEEE transactions on magnetics 48 (6), 2016-2024, 2011 | 38 | 2011 |
| Silicon germanium read port for a static random access memory register file N Mojumder, SS Song, Z Wang, C fei Yeap US Patent 9,336,864, 2016 | 34 | 2016 |
| Self-aligned structure SS Song, JJ Xu, K Rim, D Yang, JJ Zhu, J Bao, NN Mojumder, ... US Patent 9,799,560, 2017 | 31 | 2017 |
| STT-MRAMs for future universal memories: Perspective and prospective C Augustine, N Mojumder, X Fong, H Choday, SP Park, K Roy 2012 28th International Conference on Microelectronics Proceedings, 349-355, 2012 | 27 | 2012 |
| Three-port bit cell having increased width NN Mojumder, SS Song, Z Wang, C fei Yeap US Patent 9,536,596, 2017 | 23 | 2017 |
| Self-repairing SRAM using on-chip detection and compensation NN Mojumder, S Mukhopadhyay, JJ Kim, CT Chuang, K Roy IEEE transactions on very large scale integration (VLSI) systems 18 (1), 75-84, 2009 | 19 | 2009 |
| Metal layers for a three-port bit cell NN Mojumder, R Chaba, P Liu, SS Song, Z Wang, C fei Yeap US Patent 9,524,972, 2016 | 16 | 2016 |
| Spin torque MRAM using bidirectional magnonic writing DW Abraham, NN Mojumder US Patent 8,754,491, 2014 | 16 | 2014 |
| Magnonic magnetic random access memory device DW Abraham, NN Mojumder, DC Worledge US Patent 8,456,895, 2013 | 13 | 2013 |
Kaushik RoyProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
