Niladri Mojumder
Niladri Mojumder
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KNACK: A hybrid spin-charge mixed-mode simulator for evaluating different genres of spin-transfer torque MRAM bit-cells
X Fong, SK Gupta, NN Mojumder, SH Choday, C Augustine, K Roy
2011 International Conference on Simulation of Semiconductor Processes and …, 2011
A three-terminal dual-pillar STT-MRAM for high-performance robust memory applications
NN Mojumder, SK Gupta, SH Choday, DE Nikonov, K Roy
IEEE transactions on electron devices 58 (5), 1508-1516, 2011
Future cache design using STT MRAMs for improved energy efficiency: Devices, circuits and architecture
SP Park, S Gupta, N Mojumder, A Raghunathan, K Roy
Proceedings of the 49th Annual Design Automation Conference, 492-497, 2012
Layout-aware optimization of STT MRAMs
SK Gupta, SP Park, NN Mojumder, K Roy
2012 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2012
Spin-transfer torque MRAMs for low power memories: Perspective and prospective
C Augustine, NN Mojumder, X Fong, SH Choday, SP Park, K Roy
IEEE Sensors Journal 12 (4), 756-766, 2011
Band-to-band tunneling ballistic nanowire FET: Circuit-compatible device modeling and design of ultra-low-power digital circuits and memories
NN Mojumder, K Roy
IEEE transactions on electron devices 56 (10), 2193-2201, 2009
Memory device with adaptive voltage scaling based on error information
Z Wang, NN Mojumder, J Liu, C fei Yeap
US Patent 9,786,356, 2017
Effect of quantum confinement on spin transport and magnetization dynamics in dual barrier spin transfer torque magnetic tunnel junctions
NN Mojumder, C Augustine, DE Nikonov, K Roy
Journal of Applied Physics 108 (10), 2010
Holistic technology optimization and key enablers for 7nm mobile SoC
SC Song, J Xu, NN Mojumder, K Rim, D Yang, J Bao, J Zhu, J Wang, ...
2015 Symposium on VLSI Technology (VLSI Technology), T198-T199, 2015
High density static random access memory array having advanced metal patterning
N Mojumder, SS Song, Z Wang, C fei Yeap
US Patent 9,318,564, 2016
Proposal for switching current reduction using reference layer with tilted magnetic anisotropy in magnetic tunnel junctions for spin-transfer torque (STT) MRAM
NN Mojumder, K Roy
IEEE Transactions on Electron Devices 59 (11), 3054-3060, 2012
Magnonic spin-transfer torque MRAM with low power, high speed, and error-free switching
NN Mojumder, DW Abraham, K Roy, DC Worledge
IEEE transactions on magnetics 48 (6), 2016-2024, 2011
Silicon germanium read port for a static random access memory register file
N Mojumder, SS Song, Z Wang, C fei Yeap
US Patent 9,336,864, 2016
Self-aligned structure
SS Song, JJ Xu, K Rim, D Yang, JJ Zhu, J Bao, NN Mojumder, ...
US Patent 9,799,560, 2017
STT-MRAMs for future universal memories: Perspective and prospective
C Augustine, N Mojumder, X Fong, H Choday, SP Park, K Roy
2012 28th International Conference on Microelectronics Proceedings, 349-355, 2012
Three-port bit cell having increased width
NN Mojumder, SS Song, Z Wang, C fei Yeap
US Patent 9,536,596, 2017
Self-repairing SRAM using on-chip detection and compensation
NN Mojumder, S Mukhopadhyay, JJ Kim, CT Chuang, K Roy
IEEE transactions on very large scale integration (VLSI) systems 18 (1), 75-84, 2009
Spin torque MRAM using bidirectional magnonic writing
DW Abraham, NN Mojumder
US Patent 8,754,491, 2014
Metal layers for a three-port bit cell
NN Mojumder, R Chaba, P Liu, SS Song, Z Wang, C fei Yeap
US Patent 9,524,972, 2016
Magnonic magnetic random access memory device
DW Abraham, NN Mojumder, DC Worledge
US Patent 8,456,895, 2013
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