Hiroshi AMANO  (天野 浩)
Hiroshi AMANO (天野 浩)
Nagoya University (名古屋大学)
Verified email at - Homepage
Cited by
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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
H Amano, N Sawaki, I Akasaki, Y Toyoda
Applied Physics Letters 48 (5), 353-355, 1986
P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)
H Amano, M Kito, K Hiramatsu, I Akasaki
Japanese journal of applied physics 28 (12A), L2112, 1989
Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells
T Takeuchi, S Sota, M Katsuragawa, M Komori, H Takeuchi, HAH Amano, ...
Japanese Journal of Applied Physics 36 (4A), L382, 1997
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1− xAlxN (0< x≦ 0.4) films grown on sapphire substrate by MOVPE
I Akasaki, H Amano, Y Koide, K Hiramatsu, N Sawaki
Journal of crystal growth 98 (1-2), 209-219, 1989
Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters
IAI Akasaki, HAH Amano
Japanese journal of applied physics 36 (9R), 5393, 1997
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
M Kneissl, TY Seong, J Han, H Amano
nature photonics 13 (4), 233-244, 2019
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
T Takeuchi, C Wetzel, S Yamaguchi, H Sakai, H Amano, I Akasaki, ...
Applied physics letters 73 (12), 1691-1693, 1998
Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells
T Takeuchi, H Amano, I Akasaki
Japanese Journal of Applied Physics 39 (2R), 413, 2000
Shortest wavelength semiconductor laser diode
I Akasaki, S Sota, H Sakai, T Tanaka, M Koike, H Amano
Electronics Letters 32 (12), 1105-1106, 1996
Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN pn junction LED
I Akasaki, H Amano, M Kito, K Hiramatsu
Journal of luminescence 48, 666-670, 1991
Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
K Hiramatsu, S Itoh, H Amano, I Akasaki, N Kuwano, T Shiraishi, K Oki
Journal of Crystal Growth 115 (1-4), 628-633, 1991
Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection
M Hiramatsu, K Shiji, H Amano, M Hori
Applied physics letters 84 (23), 4708-4710, 2004
Stimulated emission by current injection from an AlGaN/GaN/GaInN quantum well device
I Akasaki, H Amano, S Sota, H Sakai, T Tanaka, M Koike
Japanese journal of applied physics 34 (11B), L1517, 1995
Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
H Amano, I Akasaki, K Hiramatsu, N Koide, N Sawaki
Thin Solid Films 163, 415-420, 1988
Optical properties of strained AlGaN and GaInN on GaN
T Takeuchi, H Takeuchi, S Sota, H Sakai, HAH Amano, IAI Akasaki
Japanese journal of applied physics 36 (2B), L177, 1997
Jpn. J. Appl. Phys., Part 2
T Takeuchi, S Sota, M Katsuragawa, M Komori, H Takeuchi, H Amano, ...
Jpn. J. Appl. Phys., Part 2 (36), L382, 1997
p‐type conduction in Mg‐doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
T Tanaka, A Watanabe, H Amano, Y Kobayashi, I Akasaki, S Yamazaki, ...
Applied physics letters 65 (5), 593-594, 1994
The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
A Watanabe, T Takeuchi, K Hirosawa, H Amano, K Hiramatsu, I Akasaki
Journal of crystal growth 128 (1-4), 391-396, 1993
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