| Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition JF Muth, RM Kolbas, AK Sharma, S Oktyabrsky, J Narayan Journal of Applied Physics 85 (11), 7884-7887, 1999 | 482 | 1999 |
| Fundamentals of III-V semiconductor MOSFETs S Oktyabrsky, DY Peide Springer, 2010 | 317 | 2010 |
| Defects and interfaces in epitaxial and heterostructures J Narayan, K Dovidenko, AK Sharma, S Oktyabrsky Journal of Applied Physics 84 (5), 2597-2601, 1998 | 278 | 1998 |
| Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer S Koveshnikov, W Tsai, I Ok, JC Lee, V Torkanov, M Yakimov, ... Applied physics letters 88 (2), 2006 | 234 | 2006 |
| Aluminum nitride films on different orientations of sapphire and silicon K Dovidenko, S Oktyabrsky, J Narayan, M Razeghi Journal of Applied Physics 79 (5), 2439-2445, 1996 | 175 | 1996 |
| Diffusion, activation, and regrowth behavior of high dose P implants in Ge A Satta, E Simoen, R Duffy, T Janssens, T Clarysse, A Benedetti, ... Applied Physics Letters 88 (16), 2006 | 131 | 2006 |
| Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors R Duffy, MJH Van Dal, BJ Pawlak, M Kaiser, RGR Weemaes, B Degroote, ... Applied Physics Letters 90 (24), 2007 | 119 | 2007 |
| Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography MJH Van Dal, N Collaert, G Doornbos, G Vellianitis, G Curatola, ... 2007 IEEE symposium on VLSI technology, 110-111, 2007 | 105 | 2007 |
| High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon S Oktyabrsky, V Tokranov, M Yakimov, R Moore, S Koveshnikov, W Tsai, ... Materials Science and Engineering: B 135 (3), 272-276, 2006 | 98 | 2006 |
| Small-Signal Response of Inversion Layers in High-Mobility MOSFETs Made With Thin High- Dielectrics A Ali, H Madan, S Koveshnikov, S Oktyabrsky, R Kambhampati, T Heeg, ... IEEE Transactions on Electron Devices 57 (4), 742-748, 2010 | 94 | 2010 |
| Exciton-lattice polaritons in multiple-quantum-well-based photonic crystals D Goldberg, LI Deych, AA Lisyansky, Z Shi, VM Menon, V Tokranov, ... Nature Photonics 3 (11), 662-666, 2009 | 89 | 2009 |
| Boron uphill diffusion during ultrashallow junction formation R Duffy, VC Venezia, A Heringa, TWT Hüsken, MJP Hopstaken, ... Applied Physics Letters 82 (21), 3647-3649, 2003 | 87 | 2003 |
| Characteristics of stacking faults in AlN thin films K Dovidenko, S Oktyabrsky, J Narayan Journal of applied physics 82 (9), 4296-4299, 1997 | 85 | 1997 |
| In0. 53Ga0. 47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness … S Koveshnikov, N Goel, P Majhi, H Wen, MB Santos, S Oktyabrsky, ... Applied Physics Letters 92 (22), 2008 | 83 | 2008 |
| Self-Aligned n-and p-channel GaAs MOSFETs on undoped and p-type substrates using HfO2 and silicon interface passivation layer IJ Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 83 | 2006 |
| Suppression of phosphorus diffusion by carbon co-implantation BJ Pawlak, R Duffy, T Janssens, W Vandervorst, SB Felch, EJH Collart, ... Applied physics letters 89 (6), 2006 | 82 | 2006 |
| CMOS device optimization for mixed-signal technologies PA Stolk, HP Tuinhout, R Duffy, E Augendre, LP Bellefroid, MJB Bolt, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 77 | 2001 |
| Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs N Goel, D Heh, S Koveshnikov, I Ok, S Oktyabrsky, V Tokranov, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 75 | 2008 |
| Gate current: Modeling,/spl Delta/L extraction and impact on RF performance R Van Langevelde, AJ Scholten, R Duffy, FN Cubaynes, MJ Knitel, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 69 | 2001 |
| Boron diffusion in amorphous silicon and the role of fluorine R Duffy, VC Venezia, A Heringa, BJ Pawlak, MJP Hopstaken, GCJ Maas, ... Applied physics letters 84 (21), 4283-4285, 2004 | 60 | 2004 |
Jay NarayanJohn C. Fan Family Distinguished Chair Professor of Materials Science, North Carolina StateVerified email at ncsu.edu
