Prof. Lang Zeng
Prof. Lang Zeng
Professor in School of Integrated Circuits Science and Engineering, Beihang University
Verified email at - Homepage
Cited by
Cited by
Ionic doping effect in ZrO resistive switching memory
H Zhang, B Gao, B Sun, G Chen, L Zeng, L Liu, X Liu, J Lu, R Han, J Kang, ...
Applied Physics Letters 96, 123502, 2010
A physics-based compact model of metal-oxide-based RRAM DC and AC operations
P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ...
IEEE Transactions on Electron Devices 60 (12), 4090-4097, 2013
RRAM crossbar array with cell selection device: A device and circuit interaction study
Y Deng, P Huang, B Chen, X Yang, B Gao, J Wang, L Zeng, G Du, J Kang, ...
IEEE transactions on Electron Devices 60 (2), 719-726, 2012
Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures
S Peng, M Wang, H Yang, L Zeng, J Nan, J Zhou, Y Zhang, A Hallal, ...
Scientific reports 5 (1), 18173, 2015
All spin artificial neural networks based on compound spintronic synapse and neuron
D Zhang, L Zeng, K Cao, M Wang, S Peng, Y Zhang, Y Zhang, JO Klein, ...
IEEE transactions on biomedical circuits and systems 10 (4), 828-836, 2016
Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2
L Zeng, Z Xin, S Chen, G Du, J Kang, X Liu
Applied Physics Letters 103 (11), 2013
Analytic model of endurance degradation and its practical applications for operation scheme optimization in metal oxide based RRAM
P Huang, B Chen, YJ Wang, FF Zhang, L Shen, R Liu, L Zeng, G Du, ...
2013 IEEE International Electron Devices Meeting, 22.5. 1-22.5. 4, 2013
Compact Modeling and Analysis of Voltage-Gated Spin-Orbit Torque Magnetic Tunnel Junction
K Zhang, D Zhang, C Wang, L Zeng, Y Wang, W Zhao
IEEE Access 8, 50792-50800, 2020
A physical based analytic model of RRAM operation for circuit simulation
P Huang, XY Liu, WH Li, YX Deng, B Chen, Y Lu, B Gao, L Zeng, KL Wei, ...
2012 International Electron Devices Meeting, 26.6. 1-26.6. 4, 2012
A Novel MTJ-Based Non-Volatile Ternary Content-Addressable Memory for High-Speed, Low-Power, and High-Reliable Search Operation
C Wang, D Zhang, L Zeng, E Deng, J Chen, W Zhao
IEEE Transactions on Circuits and Systems I: Regular Papers 66 (4), 1454-1464, 2018
Stochastic spintronic device based synapses and spiking neurons for neuromorphic computation
D Zhang, L Zeng, Y Zhang, W Zhao, JO Klein
2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2016
Effects of ionic doping on the behaviors of oxygen vacancies in HfO2 and ZrO2: A first principles study
H Zhang, B Gao, S Yu, L Lai, L Zeng, B Sun, L Liu, X Liu, J Lu, R Han, ...
2009 International Conference on Simulation of Semiconductor Processes and …, 2009
Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions
J Zhou, W Zhao, Y Wang, S Peng, J Qiao, L Su, L Zeng, N Lei, L Liu, ...
Applied Physics Letters 109 (24), 2016
Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs
H Jiang, N Xu, B Chen, L Zeng, Y He, G Du, X Liu, X Zhang
Semiconductor Science and Technology 29 (11), 115021, 2014
Design of Magnetic Non-Volatile TCAM With Priority-Decision in Memory Technology for High Speed, Low Power, and High Reliability
C Wang, D Zhang, L Zeng, W Zhao
IEEE Transactions on Circuits and Systems I: Regular Papers 67 (2), 464-474, 2019
Reliability-Enhanced Hybrid CMOS/MTJ Logic Circuit Architecture
D Zhang, L Zeng, Y Zhang, JO Klein, W Zhao
IEEE Transactions on Magnetics 53 (11), 1-5, 2017
Energy-efficient neuromorphic computation based on compound spin synapse with stochastic learning
D Zhang, L Zeng, Y Qu, Y Zhang, M Wang, W Zhao, T Tang, Y Wang
2015 IEEE International Symposium on Circuits and Systems (ISCAS), 1538-1541, 2015
Analysis of the Voltage–Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching
P Huang, Y Wang, H Li, B Gao, B Chen, F Zhang, L Zeng, G Du, J Kang, ...
IEEE Transactions on Nanotechnology 13 (6), 1127-1132, 2014
Impact of line-edge roughness on double-gate Schottky-barrier field-effect transistors
S Yu, Y Zhao, L Zeng, G Du, J Kang, R Han, X Liu
IEEE Transactions on Electron Devices 56 (6), 1211-1219, 2009
Mixed-Mode Analysis of Different Mode Silicon Nanowire Transistors-Based Inverter
J Wang, G Du, K Wei, K Zhao, L Zeng, X Zhang, X Liu
IEEE Transactions on Nanotechnology 13 (2), 362-367, 2014
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