| CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance U Peralagu, A Alian, V Putcha, A Khaled, R Rodriguez, ... 2019 IEEE International Electron Devices Meeting (IEDM), 17.2. 1-17.2. 4, 2019 | 62 | 2019 |
| Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics M Gorchichko, Y Cao, EX Zhang, D Yan, H Gong, SE Zhao, P Wang, ... IEEE Transactions on Nuclear Science 67 (1), 245-252, 2019 | 43 | 2019 |
| Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2Gate Dielectrics CD Liang, R Ma, Y Su, A O’Hara, EX Zhang, ML Alles, P Wang, SE Zhao, ... IEEE Transactions on Nuclear Science 65 (6), 1227-1238, 2018 | 43 | 2018 |
| Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices AK Geremew, F Kargar, EX Zhang, SE Zhao, E Aytan, MA Bloodgood, ... Nanoscale 11 (17), 8380-8386, 2019 | 39 | 2019 |
| Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics S Bonaldo, SE Zhao, A O’Hara, M Gorchichko, EX Zhang, S Gerardin, ... IEEE Transactions on Nuclear Science 67 (1), 210-220, 2019 | 36 | 2019 |
| Gate bias and length dependences of total ionizing dose effects in InGaAs FinFETs on bulk Si SE Zhao, S Bonaldo, P Wang, R Jiang, H Gong, EX Zhang, N Waldron, ... IEEE Transactions on Nuclear Science 66 (7), 1599-1605, 2019 | 23 | 2019 |
| Total-ionizing-dose effects on InGaAs FinFETs with modified gate-stack SE Zhao, S Bonaldo, P Wang, EX Zhang, N Waldron, N Collaert, V Putcha, ... IEEE Transactions on Nuclear Science 67 (1), 253-259, 2019 | 17 | 2019 |
| Capacitance–frequency estimates of border-trap densities in multifin MOS capacitors SE Zhao, R Jiang, EX Zhang, W Liao, C Liang, DM Fleetwood, ... IEEE Transactions on Nuclear Science 65 (1), 175-183, 2017 | 17 | 2017 |
| Impacts of through-silicon vias on total-ionizing-dose effects and low-frequency noise in FinFETs K Li, EX Zhang, M Gorchichko, PF Wang, M Reaz, SE Zhao, G Hiblot, ... IEEE Transactions on Nuclear Science 68 (5), 740-747, 2021 | 12 | 2021 |
| Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications V Putcha, E Bury, J Franco, A Walke, SE Zhao, U Peralagu, M Zhao, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2020 | 10 | 2020 |
| Low-frequency noise and defects in copper and ruthenium resistors DM Fleetwood, S Beyne, R Jiang, SE Zhao, P Wang, S Bonaldo, ... Applied Physics Letters 114 (20), 2019 | 9 | 2019 |
| Total-Ionizing-Dose Effects in InGaAs MOSFETs With High-k Gate Dielectrics and InP Substrates S Bonaldo, EX Zhang, SE Zhao, V Putcha, B Parvais, D Linten, S Gerardin, ... IEEE Transactions on Nuclear Science 67 (7), 1312-1319, 2019 | 8 | 2019 |
| Zs. Tőkei, I. De Wolf, K. Croes, EX Zhang, ML Alles, RD Schrimpf, RA Reed and D. Linten DM Fleetwood, S Beyne, R Jiang, SE Zhao, P Wang, S Bonaldo, ... Appl. Phys. Lett 114, 203501, 2019 | 8 | 2019 |
| Total-Ionizing-Dose Response of Nb2O5-Based MIM Diodes for Neuromorphic Computing Applications R Jiang, EX Zhang, SE Zhao, DM Fleetwood, RD Schrimpf, RA Reed, ... IEEE Transactions on Nuclear Science 65 (1), 78-83, 2017 | 6 | 2017 |
| Advanced transistors for high frequency applications B Parvais, U Peralagu, A Vais, AR Alian, L Witters, Y Mols, A Walke, ... ECS Transactions 97 (5), 27, 2020 | 5 | 2020 |
| Characterizing datasets for social visual question answering, and the new tinysocial dataset Z Chen, S Li, R Rashedi, X Zi, M Elrod-Erickson, B Hollis, A Maliakal, ... 2020 Joint IEEE 10th International Conference on Development and Learning …, 2020 | 2 | 2020 |
| Total-ionizing-dose effects on InGaAs FinFETs with improved gate stack SE Zhao, S Bonaldo, P Wang, EX Zhang, N Waldron, N Collaert, V Putcha, ... | 2 | 2019 |
| Total-Ionizing-Dose Effects on Al/SiO2Bimorph Electrothermal Microscanners W Liao, EX Zhang, ML Alles, AL Sternberg, CN Arutt, D Wang, SE Zhao, ... IEEE Transactions on Nuclear Science 65 (8), 2260-2267, 2018 | 2 | 2018 |
| Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics........... CD Liang, R Ma, Y Su, A O’Hara, EX Zhang, ML Alles, P Wang, SE Zhao, ... | | |
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityVerified email at vanderbilt.edu
