| Sidewall image transfer process employing a cap material layer for a metal nitride layer JC Arnold, SD Burns, ME Colburn, DV Horak, Y Yin US Patent 8,298,954, 2012 | 178 | 2012 |
| Direct measurement of the reaction front in chemically amplified photoresists EK Lin, CL Soles, DL Goldfarb, BC Trinque, SD Burns, RL Jones, ... Science 297 (5580), 372-375, 2002 | 123 | 2002 |
| A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI KI Seo, B Haran, D Gupta, D Guo, T Standaert, R Xie, H Shang, E Alptekin, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 108 | 2014 |
| 22 nm technology compatible fully functional 0.1 μm2 6T-SRAM cell BS Haran, A Kumar, L Adam, J Chang, V Basker, S Kanakasabapathy, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 96 | 2008 |
| Sidewall image transfer process Y Yin, JC Arnold, ME Colburn, SD Burns US Patent 8,883,649, 2014 | 67 | 2014 |
| FINFET technology featuring high mobility SiGe channel for 10nm and beyond D Guo, G Karve, G Tsutsui, KY Lim, R Robison, T Hook, R Vega, D Liu, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 65 | 2016 |
| Self aligning via patterning JC Arnold, SD Burns, SK Kanakasabapathy, Y Yin US Patent 8,298,943, 2012 | 56 | 2012 |
| Silicon containing TARC/barrier layer WS Huang, SD Burns, PR Varanasi US Patent 7,320,855, 2008 | 56 | 2008 |
| Silicon containing polymer in applications for 193-nm high-NA lithography processes S Burns, D Pfeiffer, A Mahorowala, K Petrillo, A Clancy, K Babich, ... Advances in Resist Technology and Processing XXIII 6153, 201-212, 2006 | 50 | 2006 |
| Advancements to the critical ionization dissolution model SD Burns, GM Schmid, PC Tsiartas, CG Willson, L Flanagin Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 50 | 2002 |
| Understanding molecular-level effects during post-exposure processing GM Schmid, MD Smith, CA Mack, VK Singh, SD Burns, CG Willson Advances in Resist Technology and Processing XVIII 4345, 1037-1047, 2001 | 44 | 2001 |
| Effects of etch barrier densification on step and flash imprint lithography S Johnson, R Burns, EK Kim, M Dickey, G Schmid, J Meiring, S Burns, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005 | 41 | 2005 |
| Mesoscale modeling for SFIL simulating polymerization kinetics and densification RL Burns, SC Johnson, GM Schmid, EK Kim, MD Dickey, J Meiring, ... Emerging Lithographic Technologies Viii 5374, 348-360, 2004 | 38 | 2004 |
| Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond) G Landie, Y Xu, S Burns, K Yoshimoto, M Burkhardt, L Zhuang, K Petrillo, ... Advances in Resist Materials and Processing Technology XXVIII 7972, 51-62, 2011 | 37 | 2011 |
| Vertical-transport nanosheet technology for CMOS scaling beyond lateral-transport devices H Jagannathan, B Anderson, CW Sohn, G Tsutsui, J Strane, R Xie, S Fan, ... 2021 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2021 | 31 | 2021 |
| Topcoat material and use thereof in immersion lithography processes RA David, PJ Brock, SD Burns, DL Goldfarb, D Medeiros, D Pfeiffer, ... US Patent 7,521,172, 2009 | 31 | 2009 |
| Dual hard mask lithography process JC Arnold, SD Burns, SJ Holmes, DV Horak, M Sankarapandian, Y Yin US Patent 8,916,337, 2014 | 30 | 2014 |
| EUV lithography at the 22nm technology node O Wood, CS Koay, K Petrillo, H Mizuno, S Raghunathan, J Arnold, ... Extreme Ultraviolet (EUV) Lithography 7636, 558-565, 2010 | 30 | 2010 |
| Self aligning via patterning JC Arnold, SD Burns, SK Kanakasabapathy, Y Yin US Patent 8,518,824, 2013 | 29 | 2013 |
| Graded spin-on organic antireflective coating for photolithography CJ Brodsky, SD Burns, DL Goldfarb, M Lercel, DR Medeiros, D Pfeiffer, ... US Patent 7,816,069, 2010 | 29 | 2010 |
