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Anchal Thakur
Anchal Thakur
Verified email at nith.ac.in
Title
Cited by
Cited by
Year
SiGe/Si hetero nanotube JLFET for improved performance: proposal and investigation
A Thakur, R Dhiman
Electronics Letters 55 (25), 1359-1361, 2019
122019
Impacts of core gate thickness and Ge content variation on the performance of Si1−xGex source/drain Si–nanotube JLFET
A Thakur, R Dhiman
Journal of Computational Electronics 20, 237-247, 2021
82021
Design and performance analysis of SiGe hetero nanotube junctionless FET
A Thakur, R Dhiman
TENCON 2019-2019 IEEE Region 10 Conference (TENCON), 2424-2427, 2019
72019
A physics-based drain current model for Si1-xGex source/drain NT JLFET for enhanced hot carrier reliability with temperature measurement
A Thakur, R Dhiman
Microelectronics Journal 126, 105501, 2022
62022
Highly sensitive N+ pocket doped vertical tunnel FET biosensor with wide range work function modulation gate electrodes
G Wadhwa, J Singh, A Thakur, S Bhandari
Materials Science and Engineering: B 297, 116730, 2023
32023
Comprehensive study of gate induced drain leakage in nanowire and nanotube junctionless FETs using Si1-xGex source/drain
A Thakur, R Dhiman
AEU-International Journal of Electronics and Communications 167, 154668, 2023
22023
Temperature assessment of Si1-xGex source/drain heterojunction NT-JLFET for gate induced drain leakage‒A compact model
A Thakur, R Dhiman
Superlattices and Microstructures 156, 106961, 2021
22021
Parameteric optimization of SiGe S/D NT JLFET using analytical modeling to improve L‐BTBT induced GIDL
A Thakur, R Dhiman, G Wadhwa, S Bhandari
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2024
2024
Investigation of Gate Induced Drain Leakage in Nanotube and Nanowire: A Comprehensive Study
A Thakur, R Dhiman, G Wadhwa
Nano 18 (05), 2350031, 2023
2023
A Temperature-Dependent Threshold Voltage Model for SiGe Source/Drain Si–NT JLFET
A Thakur, R Dhiman
AIJR Proceedings, 457-464, 2021
2021
A Threshold Voltage Model for SiGe Source/Drain Silicon-Nanotube-Based Junctionless Field-Effect Transistor
A Thakur, R Dhiman
Nanoscale VLSI: Devices, Circuits and Applications, 101-112, 2020
2020
Performance investigations in nanotube junctionless field effect transistor from gidl and reliability perspectives
A Thakur
Hamirpur, 0
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