Shamsul Arafin
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Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer
Y Alaskar*, S Arafin*, D Wickramaratne, MA Zurbuchen, L He, J McKay, ...
Advanced Functional Materials 24 (42), 6629–6638, 2014
Review of recent progress of III-nitride nanowire lasers
S Arafin, X Liu, Z Mi
Journal of Nanophotonics 7 (1), 074599, 2013
Advanced InP photonic integrated circuits for communication and sensing
S Arafin, LA Coldren
IEEE Journal of Selected Topics in Quantum Electronics 24 (1), 1-12, 2017
Electric-field Control of Ferromagnetism in Mn-doped ZnO Nanowires
LT Chang, CY Wang, J Tang, T Nie, W Jiang, CP Chu, S Arafin, L He, ...
Nano Letters, 2014
GaSb-Based VCSEL With Buried Tunnel Junction for Emission Around 2.3 Ám
A Bachmann, K Kashani-Shirazi, S Arafin, MC Amann
Selected Topics in Quantum Electronics, IEEE Journal of 15 (3), 933-940, 2009
Intestinal iontophoresis from mucoadhesive patches: a strategy for oral delivery
A Banerjee, R Chen, S Arafin, S Mitragotri
Journal of Controlled Release 297, 71-78, 2019
Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation
A Kumar, S Arafin, MC Amann, R Singh
Nanoscale research letters 8, 1-7, 2013
Temperature stable mid-infrared GaInAsSb/GaSb vertical cavity surface emitting lasers (VCSELs)
AB Ikyo, IP Marko, K Hild, AR Adams, S Arafin, MC Amann, SJ Sweeney
Scientific Reports 6 (1), 19595, 2016
Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 μm
A Bachmann, S Arafin, K Kashani-Shirazi
New Journal of Physics 11 (12), 125014, 2009
Electrically pumped continuous-wave vertical-cavity surface-emitting lasers at∼ 2.6 Ám
S Arafin, A Bachmann, K Kashani-Shirazi, MC Amann
Applied Physics Letters 95 (13), 131120-131120-3, 2009
Towards chip-scale optical frequency synthesis based on optical heterodyne phase-locked loop
S Arafin, A Simsek, SK Kim, S Dwivedi, W Liang, D Eliyahu, J Klamkin, ...
Optics express 25 (2), 681-695, 2017
Two-dimensional Materials: Synthesis, Characterization and Potential Applications
PK Nayak
BoD–Books on Demand, 2016
Comprehensive characterization and analysis of hexagonal boron nitride on sapphire
S Saha, A Rice, A Ghosh, SMN Hasan, W You, T Ma, A Hunter, LJ Bissell, ...
AIP Advances 11 (5), 2021
Mid-infrared Lasers for Medical Applications: introduction to the feature issue
F Toor, S Jackson, X Shang, S Arafin, H Yang
Biomedical optics express 9 (12), 6255-6257, 2018
Nanoscale growth of GaAs on patterned Si (111) substrates by molecular beam epitaxy
CP Chu, S Arafin, T Nie, K Yao, X Kou, L He, CY Wang, SY Chen, ...
Crystal growth & design 14 (2), 593-598, 2014
Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer
Y Alaskar, S Arafin, Q Lin, D Wickramaratne, J McKay, AG Norman, ...
Journal of Crystal Growth 425, 268-273, 2015
Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5 to 2.7-Ám Wavelength Range
K Kashani-Shirazi, K Vizbaras, A Bachmann, S Arafin, MC Amann
Photonics Technology Letters, IEEE 21 (16), 1106-1108, 2009
Ultra-low resistive GaSb/InAs tunnel junctions
K Vizbaras, M T÷rpe, S Arafin, MC Amann
Semiconductor Science and Technology 26 (7), 075021, 2011
Transverse-mode characteristics of GaSb-based VCSELs with buried-tunnel junctions
S Arafin, A Bachmann, MC Amann
IEEE Journal of Selected Topics in Quantum Electronics 17 (6), 1576-1583, 2011
Wavelength dependence of efficiency limiting mechanisms in type-I mid-infrared GaInAsSb/GaSb lasers
TD Eales, IP Marko, BA Ikyo, AR Adams, S Arafin, S Sprengel, MC Amann, ...
IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-9, 2017
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Articles 1–20