Dr. Debashis Panda
Dr. Debashis Panda
University of Utah, USA; NUS, Singapore; NCTU, Taiwan; CGU, Taiwan, IIT Kharagpur, India and NIST
Verified email at nist.edu - Homepage
Cited by
Cited by
Growth, dielectric properties, and memory device applications of ZrO2 thin films
D Panda, TY Tseng
Thin Solid Films 531, 1-20, 2013
One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications
D Panda, TY Tseng
Journal of Materials Science 48 (20), 6849-6877, 2013
Status and prospects of ZnO-based resistive switching memory devices
FM Simanjuntak, D Panda, KH Wei, TY Tseng
Nanoscale research letters 11 (1), 368, 2016
Resistive switching characteristics of nickel silicide layer embedded HfO2 film
D Panda, CY Huang, TY Tseng
Applied Physics Letters 100 (11), 112901, 2012
Forming-free bipolar resistive switching in nonstoichiometric ceria films
M Ismail, CY Huang, D Panda, CJ Hung, TL Tsai, JH Jieng, CA Lin, ...
Nanoscale research letters 9 (1), 1-8, 2014
Perovskite Oxides as Resistive Switching Memories: A Review
TYT D Panda
Ferroelectrics, 2014
Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films
D Panda, A Dhar, SK Ray
Journal of Applied Physics 108 (10), 104513, 2010
Nonvolatile Memristive Switching Characteristics of TiO $ _ {\bm 2} $ Films Embedded With Nickel Nanocrystals
D Panda, A Dhar, SK Ray
IEEE transactions on nanotechnology 11 (1), 51-55, 2011
Impacts of Co doping on ZnO transparent switching memory device characteristics
FM Simanjuntak, OK Prasad, D Panda, CA Lin, TL Tsai, KH Wei, ...
Applied Physics Letters 108 (18), 183506, 2016
Improved endurance and resistive switching stability in ceria thin films due to charge transfer ability of Al dopant
M Ismail, E Ahmed, AM Rana, F Hussain, I Talib, MY Nadeem, D Panda, ...
ACS applied materials & interfaces 8 (9), 6127-6136, 2016
Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming
FM Simanjuntak, D Panda, TL Tsai, CA Lin, KH Wei, TY Tseng
Applied Physics Letters 107 (3), 033505, 2015
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
TYT Firman Mangasa Simanjuntak, Debashis Panda, Tsung-Ling Tsai, Chun-An Lin ...
Journal of Materials Science 50 (21), 6961-6969, 2015
A collective study on modeling and simulation of resistive random access memory
D Panda, PP Sahu, TY Tseng
Nanoscale research letters 13 (1), 8, 2018
Memory characteristics of nickel nanocrystals with high-k dielectric tunneling barriers
D Panda, S Maikap, A Dhar, SK Ray
Electrochemical and Solid State Letters 12 (1), H7, 2008
Improved charge storage characteristics of the tetralayer non-volatile memory structure using nickel nanocrystal trapping layer
D Panda, A Dhar, SK Ray
Semiconductor science and technology 24 (11), 115020, 2009
Temperature induced complementary switching in titanium oxide resistive random access memory
D Panda, FM Simanjuntak, TY Tseng
AIP Advances 6 (7), 075314, 2016
Optical characteristics of Er3+-doped Ge nanocrystals in sol–gel-derived SiO2 glass
K Das, V Nagarajan, ML NandaGoswami, D Panda, A Dhar, SK Ray
Nanotechnology 18 (9), 095704, 2007
Schottky barrier characteristics of Cobalt–Nickel silicide/n-Si junctions for scaled-Si CMOS applications
D Panda, A Dhar, SK Ray
IEEE transactions on electron devices 55 (9), 2403-2408, 2008
Improving linearity by introducing Al in HfO2 as a memristor synapse device
S Chandrasekaran, FM Simanjuntak, R Saminathan, D Panda, TY Tseng
Nanotechnology 30 (44), 445205, 2019
Thermal assisted reset modelling in nickel oxide based unipolar resistive switching memory
D Panda, PP Sahu
Journal of Applied Physics 121 (20), 204504, 2017
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