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Myunghwan Ryu
Myunghwan Ryu
Synopsys
Verified email at unist.ac.kr
Title
Cited by
Cited by
Year
Optimal inverter logic gate using 10-nm double gate-all-around (DGAA) transistor with asymmetric channel width
M Ryu, F Bien, Y Kim
AIP Advances 6 (1), 2016
92016
Simple and accurate capacitance modeling of 32nm multi-fin FinFET
D Kim, Y Kang, M Ryu, Y Kim
2013 International SoC Design Conference (ISOCC), 392-393, 2013
82013
Performance and power analysis of through silicon via based 3D IC integration
Y Kim, M Ryu, HV Nguyen
International Workshop on System Level Interconnect Prediction, 1-1, 2011
72011
On-chip interconnect boosting technique by using of 10-nm double gate-all-around (DGAA) transistor
J Lee, M Ryu, Y Kim
IEICE Electronics Express 12 (12), 20150321-20150321, 2015
62015
Impacts of Trapezoidal Fin of 20-nm Double-Gate FinFET on the Electrical Characteristics of Circuits
M Ryu, Y Kim
JSTS: Journal of Semiconductor Technology and Science 15 (4), 462-470, 2015
32015
Transistor layout optimization for leakage saving
M Ryu, Y Kang, Y Kim
2013 International SoC Design Conference (ISOCC), 253-254, 2013
32013
Trapezoidal approximation for on-current modeling of 45-nm non-rectilinear gate shape
M Ryu, Y Kim
IEICE Electronics Express 10 (11), 20130239-20130239, 2013
32013
A novel methodology for speeding up IC performance in 32nm FinFET
HV Nguyen, M Ryu, Y Kim
IEICE Electronics Express 9 (4), 227-233, 2012
32012
Diffusion-rounded CMOS for improving both Ion and Ioff characteristics
M Ryu, HV Nguyen, Y Kim
IEICE Electronics Express 8 (21), 1783-1788, 2011
32011
TSV Geometrical Variations and Optimization Metric with Repeaters for 3D IC
HV Nguyen, M Ryu, Y Kim
IEICE transactions on electronics 95 (12), 1864-1871, 2012
12012
Junctionless Sandwiched-gate Logic Design using Novel Device Structure
M Ryu, Y Kim
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 18 (4), 461-467, 2018
2018
Process-induced Structural Variability-aware Performance Optimization for Advanced Nanoscale Technologies
M Ryu
Graduate School of UNIST, 2016
2016
Sandwiched-gate inverter: Novel device structure for future logic gates
M Ryu, F Bien, Y Kim
2015 International Conference on Simulation of Semiconductor Processes and …, 2015
2015
Analysis of structural variation and threshold voltage modulation in 10-nm double gate-all-around (DGAA) transistor
M Ryu, Y Kim
2014 International SoC Design Conference (ISOCC), 228-229, 2014
2014
A high resolution and high linearity 45nm CMOS fully digital voltage sensor for low power applications
M Ryu, Y Kim
IEICE Electronics Express 10 (13), 20130400-20130400, 2013
2013
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