| Six-band calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness MV Fischetti, Z Ren, PM Solomon, M Yang, K Rim Journal of Applied Physics 94 (2), 1079-1095, 2003 | 625 | 2003 |
| Silicon device scaling to the sub-10-nm regime M Ieong, B Doris, J Kedzierski, K Rim, M Yang Science 306 (5704), 2057-2060, 2004 | 595 | 2004 |
| Fabrication and analysis of deep submicron strained-Si n-MOSFET's K Rim, JL Hoyt, JF Gibbons IEEE Transactions on Electron Devices 47 (7), 1406-1415, 2000 | 536 | 2000 |
| Ultrathin high-K gate stacks for advanced CMOS devices EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 391 | 2001 |
| Characteristics and device design of sub-100 nm strained Si N-and PMOSFETs K Rim, J Chu, H Chen, KA Jenkins, T Kanarsky, K Lee, A Mocuta, H Zhu, ... 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002 | 371 | 2002 |
| Strained Si NMOSFETs for high performance CMOS technology K Rim, S Koester, M Hargrove, J Chu, PM Mooney, J Ott, T Kanarsky, ... 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2001 | 347 | 2001 |
| Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs K Rim, K Chan, L Shi, D Boyd, J Ott, N Klymko, F Cardone, L Tai, ... IEEE International Electron Devices Meeting 2003, 3.1. 1-3.1. 4, 2003 | 293 | 2003 |
| Transconductance enhancement in deep submicron strained Si n-MOSFETs K Rim, JL Hoyt, JF Gibbons International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 242 | 1998 |
| Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs K Rim, J Welser, JL Hoyt, JF Gibbons Proceedings of International Electron Devices Meeting, 517-520, 1995 | 223 | 1995 |
| High-performance CMOS devices on hybrid crystal oriented substrates BB Doris, KW Guarini, M Ieong, S Narasimha, K Rim, JW Sleight, M Yang US Patent 7,329,923, 2008 | 195 | 2008 |
| Strained silicon on insulator structures K Rim US Patent 6,603,156, 2003 | 192 | 2003 |
| 80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/gate dielectric for ULSI applications DA Buchanan, EP Gusev, E Cartier, H Okorn-Schmidt, K Rim, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 147 | 2000 |
| Structure and method for mobility enhanced MOSFETs with unalloyed silicide Y Liu, D Chidambarrao, O Gluschenkov, JR Holt, RT Mo, K Rim US Patent 8,217,423, 2012 | 132 | 2012 |
| Strained Si CMOS (SS CMOS) technology: opportunities and challenges K Rim, R Anderson, D Boyd, F Cardone, K Chan, H Chen, S Christansen, ... Solid-State Electronics 47 (7), 1133-1139, 2003 | 125 | 2003 |
| Semiconductor-on-insulator lateral pin photodetector with a reflecting mirror and backside contact and method for forming the same GM Cohen, K Rim, DL Rogers, JD Schaub, M Yang US Patent 6,667,528, 2003 | 110 | 2003 |
| Laser surface annealing of antimony doped amorphized semiconductor region D Chidambarrao, S Jain, W Henson, K Rim US Patent App. 11/308,108, 2007 | 109 | 2007 |
| Strained silicon CMOS on hybrid crystal orientations KK Chan, M Ieong, A Reznicek, DK Sadana, L Shi, M Yang US Patent 7,087,965, 2006 | 105 | 2006 |
| Strained-silicon CMOS device and method A Bryant, Q Ouyang, K Rim US Patent 7,227,205, 2007 | 103 | 2007 |
| Integration and optimization of embedded-SiGe, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies LT Su, J Pellerin, SF Huang, M Khare, D Schepis, K Rim, S Liming, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 96 | 2005 |
| Channel doping impact on FinFETs for 22nm and beyond CH Lin, R Kambhampati, RJ Miller, TB Hook, A Bryant, W Haensch, ... 2012 Symposium on VLSI Technology (VLSIT), 15-16, 2012 | 88 | 2012 |
