| Conductive-bridging random access memory: challenges and opportunity for 3D architecture D Jana, S Roy, R Panja, M Dutta, SZ Rahaman, R Mahapatra, S Maikap Nanoscale research letters 10, 1-23, 2015 | 101 | 2015 |
| Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure S Maikap, D Jana, M Dutta, A Prakash Nanoscale Research Letters 9 (292), 2014 | 91* | 2014 |
| RRAM characteristics using a new Cr/GdOx/TiN structure D Jana, M Dutta, S Samanta, S Maikap Nanoscale Research Letters 9 (680), 1-9, 2014 | 91 | 2014 |
| Controlling Resistive Switching by Using an Optimized MoS2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaOx-Based RRAM JT Qiu, S Samanta, M Dutta, S Ginnaram, S Maikap Langmuir 35 (11), 3897-3906, 2019 | 45 | 2019 |
| Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection S Samanta, SZ Rahaman, A Roy, S Jana, S Chakrabarti, R Panja, S Roy, ... Scientific Reports 7 (1), 11240, 2017 | 38 | 2017 |
| Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu: AlOx/TaOx/TiN structure S Roy, S Maikap, G Sreekanth, M Dutta, D Jana, YY Chen, JR Yang Journal of Alloys and Compounds 637, 517-523, 2015 | 36 | 2015 |
| Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiNxOy/TiN M Dutta, S Maikap, JT Qiu Advanced Electronic Materials 5 (2), 1800288, 2019 | 31 | 2019 |
| Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure S Chakrabarti, R Panja, S Roy, A Roy, S Samanta, M Dutta, S Ginnaram, ... Applied Surface Science 433, 51-59, 2018 | 30 | 2018 |
| Cross-point resistive switching memory and urea sensing by using annealed GdOx film in IrOx/GdOx/W structure for biomedical applications P Kumar, S Maikap, S Ginnaram, JT Qiu, D Jana, S Chakrabarti, ... Journal of The Electrochemical Society 164 (4), B127, 2017 | 20 | 2017 |
| Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points M Dutta, A Senapati, S Ginnaram, S Maikap Vacuum 176, 109326, 2020 | 18 | 2020 |
| Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM A Senapati, S Roy, YF Lin, M Dutta, S Maikap Electronics 9 (7), 1106, 2020 | 9 | 2020 |
| Impact of AlOxinterfacial layer and switching mechanism in W/AlOx/TaOx/TiN RRAMs S Chakrabarti, D Jana, M Dutta, S Maikap, YY Chen, JR Yang 2014 IEEE 6th International Memory Workshop (IMW), 1-4, 2014 | 9 | 2014 |
| Cu filament based resistive switching and oxidation reduction through dopamine sensing in novel Cu/MoS2/TinN structure M Dutta, S Ginnaram, A Roy, S Maikap 2018 IEEE International Memory Workshop (IMW), 1-4, 2018 | 2 | 2018 |
| MoS2 based CBRAM with Mo/Ti barrier layer for artificial synapse application A Senapati, S Ginnaram, M Dutta, S Maikap 2020 International Symposium on VLSI Technology, Systems and Applications …, 2020 | 1 | 2020 |
| Cross-point resistive switching and glucose sensing by using porous Ir electrode in Ir/SiOx/W memory platform S Jana, M Dutta, S Maikap 2018 International Conference on Solid State Devices and Materials, 887-888, 2018 | | 2018 |
| Parameter Depenedant Synthesis and Characterization of Poly Aniline M Dutta | | 2012 |
Siddheswar MaikapProfessor of Electronics Engineering, Chang Gung UniversityVerified email at mail.cgu.edu.tw
