| Single Event Multiple Effect Tolerant RHBD14T SRAM Cell Design for Space Applications GK Ch Naga Raghuram, Bharat Gupta IEEE Transactions on Device and Materials Reliability, 2021 | 27 | 2021 |
| Double Node Upset Tolerant RHBD15T SRAM Cell Design for Space Applications CHNR Bharat Gupta, Gaurav Kaushal IEEE Transactions on Device and Materials Reliability, 2020 | 23 | 2020 |
| Radiation hard circuit design: flip-flop and SRAM G Kaushal, SS Rathod, CN Raghuram, S Dasgupta VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and …, 2019 | 2 | 2019 |
| Robust SRAM cell development for single-event multiple effects NR CH, D Manohar Reddy, P Kishore Kumar, G Kaushal VLSI Design and Test: 22nd International Symposium, VDAT 2018, Madurai …, 2019 | 2 | 2019 |
| Soft Error-Resilient RHBD16T SRAM Cell in 32nm Technology G Kaushal, B Murgan, M Pattanaik, CN Raghuram, SS Rathod Innovative Applications of Nanowires for Circuit Design, 171-188, 2021 | | 2021 |
| Analytical modeling of short channel effects in nanowire mosfets with interface trap charges NR CH, B Gupta, G Kaushal Proceedings of the first international conference on advances in …, 2019 | | 2019 |
| Design of High Speed and Area Efficient Carry Look-Ahead (CLA) Adders CHNR N. S. Chandra .K International Journal of Applied Engineering Research (IJAER) 10 (16), 36791 …, 2015 | | 2015 |
| Design of Radiation Hardened and Low Power Static Random Access Memory SRAM Cells NR CH Patna, 0 | | |
Gaurav kaushalABV-IIITM GwaliorVerified email at iiitm.ac.in
