| Steep Slope Devices and TFETs L Zhang, J Huang, M Chan Tunneling Field Effect Transistor Technology, 1-31, 2016 | 33 | 2016 |
| High-Current Tunneling FETs With ( ) Orientation and a Channel Heterojunction P Long, JZ Huang, M Povolotskyi, G Klimeck, MJW Rodwell IEEE Electron Device Letters 37 (3), 345-348, 2016 | 29 | 2016 |
| Model order reduction for multiband quantum transport simulations and its application to p-type junctionless transistors JZ Huang, WC Chew, J Peng, CY Yam, LJ Jiang, GH Chen IEEE Transactions on Electron Devices 60 (7), 2111-2119, 2013 | 27 | 2013 |
| Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs P Long, E Wilson, J Huang, G Klimeck, M Rodwell, M Povolotskyi Electron Device Letters, IEEE 37 (1), 107 - 110, 2016 | 26 | 2016 |
| Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions TA Ameen, H Ilatikhameneh, JZ Huang, M Povolotskyi, R Rahman, ... IEEE Transactions on Electron Devices 64 (6), 2512-2518, 2017 | 25 | 2017 |
| A compact broadband patch antenna for UHF RFID tags JZ Huang, PH Yang, WC Chew, TT Ye 2009 Asia Pacific Microwave Conference, 1044-1047, 2009 | 23 | 2009 |
| A Multiscale Modeling of Triple-Heterojunction Tunneling FETs JZ Huang, P Long, M Povolotskyi, H Ilatikhameneh, T Ameen, R Rahman, ... IEEE Transactions on Electron Devices 64 (6), 2728-2735, 2017 | 22 | 2017 |
| Robust mode space approach for atomistic modeling of realistically large nanowire transistors JZ Huang, H Ilatikhameneh, M Povolotskyi, G Klimeck Journal of Applied Physics 123 (4), 044303, 2018 | 21 | 2018 |
| P-Type Tunnel FETs With Triple Heterojunctions JZ Huang, P Long, M Povolotskyi, G Klimeck, MJW Rodwell IEEE Journal of the Electron Devices Society 4 (6), 410 - 415, 2016 | 21 | 2016 |
| Scalable GaSb/InAs tunnel FETs with nonuniform body thickness JZ Huang, P Long, M Povolotskyi, G Klimeck, MJW Rodwell IEEE Transactions On Electron Devices 64 (1), 96-101, 2016 | 20 | 2016 |
| A multi-scale modeling of junctionless field-effect transistors CY Yam, J Peng, Q Chen, S Markov, JZ Huang, N Wong, W Cho Chew, ... Applied Physics Letters 103 (6), 062109, 2013 | 17 | 2013 |
| A novel broadband patch antenna for universal UHF RFID tags JZ Huang, PH Yang, WC Chew, TT Ye Microwave and Optical Technology Letters 52 (12), 2653-2657, 2010 | 17 | 2010 |
| Efficient simulation and analysis of quantum ballistic transport in nanodevices with AWE JZ Huang, WC Chew, M Tang, L Jiang IEEE Transactions on Electron Devices 59 (2), 468-476, 2011 | 16 | 2011 |
| Quantum Transport Simulation of III-V TFETs with Reduced-Order\ varvec {k}\ cdot\ varvec {p} Method JZ Huang, L Zhang, P Long, M Povolotskyi, G Klimeck Tunneling Field Effect Transistor Technology, 151-180, 2016 | 15* | 2016 |
| Investigation on self-heating effect in carbon nanotube field-effect transistors CJ Xing, WY Yin, LT Liu, J Huang IEEE Transactions on Electron Devices 58 (2), 523-529, 2010 | 15 | 2010 |
| Impact of Body Thickness and Scattering on III–V Triple Heterojunction TFET Modeled With Atomistic Mode-Space Approximation CY Chen, H Ilatikhameneh, JZ Huang, G Klimeck, M Povolotskyi IEEE Transactions on Electron Devices 67 (8), 3478-3485, 2020 | 14 | 2020 |
| High-current InP-based triple heterojunction tunnel transistors P Long, JZ Huang, M Povolotskyi, D Verreck, G Klimeck, MJW Rodwell 2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016 | 13 | 2016 |
| Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors P Long, M Povolotskyi, JZ Huang, H Ilatikhameneh, T Ameen, R Rahman, ... Proc. 74th Annu. Device Res. Conf.(DRC), 1-2, 2016 | 13* | 2016 |
| A tunnel FET design for high-current, 120 mV operation P Long, JZ Huang, M Povolotskyi, D Verreck, J Charles, T Kubis, ... 2016 IEEE International Electron Devices Meeting (IEDM), 30.2. 1-30.2. 4, 2016 | 11 | 2016 |
| Model order reduction for quantum transport simulation of band-to-band tunneling devices JZ Huang, L Zhang, WC Chew, CY Yam, LJ Jiang, GH Chen, M Chan IEEE Transactions on Electron Devices 61 (2), 561-568, 2014 | 11 | 2014 |
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
