Siddheswar Maikap
Siddheswar Maikap
Professor of Electronics Engineering, Chang Gung University
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Low-power switching of nonvolatile resistive memory using hafnium oxide
HY Lee, PS Chen, CC Wang, S Maikap, PJ Tzeng, CH Lin, LS Lee, ...
Japanese journal of applied physics 46 (4S), 2175, 2007
TaO x -based resistive switching memories: prospective and challenges
A Prakash, D Jana, S Maikap
Nanoscale research letters 8 (1), 418, 2013
Mobility-enhancement technologies
C Wee, S Maikop, CY Yu
IEEE Circuits and Devices Magazine 21 (3), 21-36, 2005
Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications
S Maikap, HY Lee, TY Wang, PJ Tzeng, CC Wang, LS Lee, KC Liu, ...
Semiconductor science and technology 22 (8), 884, 2007
Nanocrystals for silicon-based light-emitting and memory devices
SK Ray, S Maikap, W Banerjee, S Das
Journal of Physics D: Applied Physics 46 (15), 153001, 2013
Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface
SZ Rahaman, S Maikap, TC Tien, HY Lee, WS Chen, FT Chen, MJ Kao, ...
Nanoscale research letters 7 (1), 345, 2012
Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures
K Das, M NandaGoswami, R Mahapatra, GS Kar, A Dhar, HN Acharya, ...
Applied physics letters 84 (8), 1386-1388, 2004
Conductive-bridging random access memory: challenges and opportunity for 3D architecture
D Jana, S Roy, R Panja, M Dutta, SZ Rahaman, R Mahapatra, S Maikap
Nanoscale Research Letters 10 (1), 188, 2015
Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure
S Maikap, D Jana, M Dutta, A Prakash
Nanoscale Research Letters 9, 292, 2014
Band offsets and charge storage characteristics of atomic layer deposited high- multilayers
S Maikap, TY Wang, PJ Tzeng, CH Lin, TC Tien, LS Lee, JR Yang, ...
Applied physics letters 90 (26), 262901, 2007
Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film
SZ Rahaman, S Maikap, WS Chen, HY Lee, FT Chen, MJ Kao, MJ Tsai
Applied Physics Letters 101 (7), 073106, 2012
Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs
WC Hua, MH Lee, PS Chen, S Maikap, CW Liu, KM Chen
IEEE electron device letters 25 (10), 693-695, 2004
Charge storage characteristics of atomic layer deposited nanocrystals
S Maikap, TY Wang, PJ Tzeng, CH Lin, LS Lee, JR Yang, MJ Tsai
Applied physics letters 90 (25), 253108, 2007
Bipolar resistive switching memory using Cu metallic filament in Ge0. 4Se0. 6 solid electrolyte
SZ Rahaman, S Maikap, HC Chiu, CH Lin, TY Wu, YS Chen, PJ Tzeng, ...
Electrochemical and Solid State Letters 13 (5), H159, 2010
Package-strain-enhanced device and circuit performance
S Maikap, MH Liao, F Yuan, MH Lee, CF Huang, ST Chang, CW Liu
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Electrical and interfacial characteristics of ultrathin gate dielectrics on strain compensated SiGeC/Si heterostructure
R Mahapatra, JH Lee, S Maikap, GS Kar, A Dhar, NM Hwang, DY Kim, ...
Applied physics letters 82 (14), 2320-2322, 2003
Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament
SZ Rahaman, S Maikap, WS Chen, HY Lee, FT Chen, TC Tien, MJ Tsai
Journal of Applied Physics 111 (6), 063710, 2012
Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure
D Jana, S Samanta, S Maikap, HM Cheng
Applied Physics Letters 108 (1), 011605, 2016
Nanoscale (EOT= 5.6 nm) nonvolatile memory characteristics using n-Si/SiO2/HfAlO nanocrystal/Al2O3/Pt capacitors
S Maikap, SZ Rahaman, TC Tien
Nanotechnology 19 (43), 435202, 2008
Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors
S Maikap, PJ Tzeng, HY Lee, CC Wang, TC Tien, LS Lee, MJ Tsai
Applied Physics Letters 91 (4), 043114, 2007
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