Bin Amin
Bin Amin
Abbottabad University of Science and Technology (AUST)
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Cited by
Cited by
Strain engineering of WS2, WSe2, and WTe2
B Amin, TP Kaloni, U Schwingenschlögl
RSC Advances 4 (65), 34561-34565, 2014
Heterostructures of transition metal dichalcogenides
B Amin, N Singh, U Schwingenschlögl
Physical Review B 92 (7), 075439, 2015
Layered graphene/GaS van der Waals heterostructure: Controlling the electronic properties and Schottky barrier by vertical strain
CVN Khang D. Pham, Nguyen N. Hieu, Huynh V. Phuc, I. A. Fedorov, C. A. Duque ...
Applied Physics Letters 113 (17), 171605, 2018
Ab initio study of the bandgap engineering of Al1− xGaxN for optoelectronic applications
B Amin, I Ahmad, M Maqbool, S Goumri-Said, R Ahmad
Journal of Applied Physics 109 (2), 2011
Rashba spin splitting and photocatalytic properties of GeC−MSSe (M= Mo, W) van der Waals heterostructures
HU Din, M Idrees, A Albar, M Shafiq, I Ahmad, CV Nguyen, B Amin
Physical Review B 100 (16), 165425, 2019
Optoelectronic and solar cell applications of Janus monolayers and their van der Waals heterostructures
M Idrees, HU Din, R Ali, G Rehman, T Hussain, CV Nguyen, I Ahmad, ...
Physical Chemistry Chemical Physics 21 (34), 18612-18621, 2019
Graphene/WSeTe van der Waals heterostructure: Controllable electronic properties and Schottky barrier via interlayer coupling and electric field
TV Vu, NV Hieu, HV Phuc, NN Hieu, HD Bui, M Idrees, B Amin, ...
Applied Surface Science 507, 145036, 2020
Investigation of structural and optoelectronic properties of BaThO3
G Murtaza, I Ahmad, B Amin, A Afaq, M Maqbool, J Maqssod, I Khan, ...
Optical Materials 33 (3), 553-557, 2011
Interfacial characteristics, Schottky contact, and optical performance of a van der Waals heterostructure: Strain engineering and electric field tunability
HTT Nguyen, MM Obeid, A Bafekry, M Idrees, TV Vu, HV Phuc, NN Hieu, ...
Physical Review B 102 (7), 075414, 2020
Electronic structure, optical and photocatalytic performance of novel SiC-MX2 (M= Mo, W and X=S, Se) van der Waals heterostructures
BA H. U-Din, M. Idrees, Gul Rehman, Chuong V. Nguyen, Li-Yong Gan, Iftikhar ...
Physical Chemistry Chemical Physics, 2018
Materials properties of out-of-plane heterostructures of MoS2-WSe2 and WS2-MoSe2
B Amin, TP Kaloni, G Schreckenbach, MS Freund
Applied Physics Letters 108 (6), 063105, 2016
Interlayer coupling and electric field controllable Schottky barriers and contact types in graphene/ heterostructures
CV Nguyen, M Idrees, HV Phuc, NN Hieu, NTT Binh, B Amin, TV Vu
Physical Review B 101 (23), 235419, 2020
Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field
PTT Le, NN Hieu, LM Bui, HV Phuc, BD Hoi, B Amin, CV Nguyen
Physical Chemistry Chemical Physics 20 (44), 27856-27864, 2018
Opto-electronic response of spinels MgAl2O4 and MgGa2O4 through modified Becke-Johnson exchange potential
B Amin, R Khenata, A Bouhemadou, I Ahmad, M Maqbool
Physica B: Condensed Matter 407 (13), 2588-2592, 2012
Electronic properties of WS2 and WSe2 monolayers with biaxial strain: a first-principles study
D Muoi, NN Hieu, HTT Phung, HV Phuc, B Amin, BD Hoi, NV Hieu, ...
Chemical Physics 519, 69-73, 2019
Intriguing electronic structures and optical properties of two-dimensional van der Waals heterostructures of Zr2CT2 (T= O, F) with MoSe2 and WSe2
G Rehman, SA Khan, B Amin, I Ahmad, LY Gan, M Maqbool
Journal of Materials Chemistry C 6 (11), 2830-2839, 2018
Bandgap investigations and the effect of the In and Al concentration on the optical properties of InxAl1−xN
M Maqbool, B Amin, I Ahmad
JOSA B 26 (11), 2181-2184, 2009
Strain engineering of electronic structures and photocatalytic responses of MXenes functionalized by oxygen
S. A. Khan, B. Amin, Li-Yong Gan, and Iftikhar Ahmad
Physical Chemistry Chemical Physics 19, 14738-14744, 2017
Cs 2 NaGaBr 6: a new lead-free and direct band gap halide double perovskite
Y Saeed, B Amin, H Khalil, F Rehman, H Ali, MI Khan, A Mahmood, ...
RSC advances 10 (30), 17444-17451, 2020
First principles study of the electronic properties and Schottky barrier in vertically stacked graphene on the Janus MoSeS under electric field
Khang D. Pham, Nguyen N. Hieu, Huynh V. Phuc, Bui D. Hoi, Victor V. Ilysov ...
Computational Materials Science 153, 438-444, 2018
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