David Maldonado Correa
David Maldonado Correa
IHP GmbH - Leibniz-Institute for innovative microelectronics
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Stochastic resonance in a metal-oxide memristive device
AN Mikhaylov, DV Guseinov, AI Belov, DS Korolev, VA Shishmakova, ...
Chaos, Solitons & Fractals 144, 110723, 2021
Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs
E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ...
Microelectronic Engineering 214, 104-109, 2019
Time series statistical analysis: A powerful tool to evaluate the variability of resistive switching memories
JB Roldán, FJ Alonso, AM Aguilera, D Maldonado, M Lanza
Journal of Applied Physics 125 (17), 2019
On the thermal models for resistive random access memory circuit simulation
JB Roldán, G González-Cordero, R Picos, E Miranda, F Palumbo, ...
Nanomaterials 11 (5), 1261, 2021
Variability in Resistive Memories
JB Roldán, E Miranda, D Maldonado, AN Mikhaylov, NV Agudov, ...
Advanced Intelligent Systems, 2200338, 2023
Memristor variability and stochastic physical properties modeling from a multivariate time series approach
FJ Alonso, D Maldonado, AM Aguilera, JB Roldán
Chaos, Solitons & Fractals 143, 110461, 2021
Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories
D Maldonado, F Aguirre, G González-Cordero, AM Roldán, MB González, ...
Journal of Applied Physics 130 (5), 2021
Experimental evaluation of the dynamic route map in the reset transition of memristive ReRAMs
D Maldonado, MB Gonzalez, F Campabadal, F Jimenez-Molinos, ...
Chaos, Solitons & Fractals 139, 110288, 2020
Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective
D Maldonado, S Aldana, MB Gonzalez, F Jiménez-Molinos, MJ Ibáñez, ...
Microelectronic Engineering 257, 111736, 2022
Spiking neural networks based on two-dimensional materials
JB Roldan, D Maldonado, C Aguilera-Pedregosa, E Moreno, F Aguirre, ...
npj 2D Materials and Applications 6 (1), 63, 2022
Non-uniform spline quasi-interpolation to extract the series resistance in resistive switching memristors for compact modeling purposes
MJ Ibáñez, D Barrera, D Maldonado, R Yáñez, JB Roldán
Mathematics 9 (17), 2159, 2021
Resistive switching and charge transport in laser-fabricated graphene oxide memristors: a time series and quantum point contact modeling approach
N Rodriguez, D Maldonado, FJ Romero, FJ Alonso, AM Aguilera, ...
Materials 12 (22), 3734, 2019
Parameter extraction techniques for the analysis and modeling of resistive memories
D Maldonado, S Aldana, MB González, F Jiménez-Molinos, ...
Microelectronic Engineering 265, 111876, 2022
An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
D Maldonado, C Aguilera-Pedregosa, G Vinuesa, H García, S Dueñas, ...
Chaos, Solitons & Fractals 160, 112247, 2022
Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories
D Maldonado, AM Roldán, MB González, F Jiménez-Molinos, ...
Microelectronic Engineering 215, 110983, 2019
Holistic variability analysis in resistive switching memories using a two-dimensional variability coefficient
C Acal, D Maldonado, AM Aguilera, K Zhu, M Lanza, JB Roldán
ACS Applied Materials & Interfaces 15 (15), 19102-19110, 2023
Modeling of the temperature effects in filamentary-type resistive switching memories using quantum point-contact theory
M Calixto, D Maldonado, E Miranda, JB Roldán
Journal of Physics D: Applied Physics 53 (29), 295106, 2020
One cut-point phase-type distributions in reliability. An application to resistive random access memories
C Acal, JE Ruiz-Castro, D Maldonado, JB Roldán
Mathematics 9 (21), 2734, 2021
Conductance quantization in h-bn memristors
JB Roldan, D Maldonado, A Cantudo, Y Shen, W Zheng, M Lanza
Applied Physics Letters 122 (20), 2023
Time series modeling of the cycle-to-cycle variability in h-BN based memristors
JB Roldán, D Maldonado, FJ Alonso, AM Roldán, F Hui, Y Shi, ...
2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021
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