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ARGHA DEEP PAUL
ARGHA DEEP PAUL
Lecturer (ETCE), Bankura Govt. Polytechnic
Verified email at phd.nitdgp.ac.in
Title
Cited by
Cited by
Year
Effect of Aluminum Doping on Performance of HfO-Based Flexible Resistive Memory Devices
AD Paul, S Biswas, P Das, HJ Edwards, VR Dhanak, R Mahapatra
IEEE Transactions on Electron Devices 67 (10), 4222-4227, 2020
212020
Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfO/AlOy ReRAMs
S Biswas, AD Paul, P Das, P Tiwary, HJ Edwards, VR Dhanak, IZ Mitrovic, ...
IEEE Transactions on Electron Devices 68 (8), 3787-3793, 2021
182021
Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer
S Maji, AD Paul, P Das, S Chatterjee, P Chatterjee, VR Dhanak, ...
Journal of Materials Science: Materials in Electronics 32, 2936-2945, 2021
112021
Impact of Stack Engineering on HfO_x/Al: HfO_x-Based Flexible Resistive Memory Devices and Its Synaptic Characteristics
AD Paul, S Biswas, A Dalal, A Mondal, R Mahapatra
IEEE Transactions on Electron Devices 69 (4), 1842 - 1848, 2022
92022
Improved resistive switching characteristics of Ag/Al: HfO x/ITO/PET ReRAM for flexible electronics application
AD Paul, S Biswas, P Das, HJ Edwards, A Dalal, S Maji, VR Dhanak, ...
Semiconductor Science and Technology 36 (6), 065006, 2021
82021
Stable and reversible phase change performance of TiO2 coated VO2 nano-columns: Experiments and theoretical analysis
A Samal, AK Lakshya, SMMD Dwivedi, A Dalal, A Ghosh, AD Paul, ...
Ceramics International 47 (10), 14741-14749, 2021
72021
Ion-Sensitive Three-Terminal Device as a Universal Hybrid Platform With TiO2 Nanowires on the Channel
A Dalal, A Bebarta, AD Paul, R Barman, JM Nunzi, A Tameev, ...
IEEE Sensors Journal 23 (3), 1917-1924, 2023
12023
Effect of Substrate Temperature on Resistive Switching Characteristics of HfOx based Flexible ReRAM Devices
AD Paul, S Biswas, P Tiwary, R Mahapatra
2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020
2020
Effect of Substrate Temperature on Resistive Switching Characteristics of HfO
AD Paul
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