Jackson Chun-Yang Huang
Jackson Chun-Yang Huang
Department of Electrical and Computer Engineering, National University of Singapore
Verified email at nus.edu.sg
Title
Cited by
Cited by
Year
Resistive switching characteristics of nickel silicide layer embedded HfO2 film
D Panda, CY Huang, TY Tseng
Applied Physics Letters 100 (11), 112901, 2012
712012
Forming-free bipolar resistive switching in nonstoichiometric ceria films
M Ismail, CY Huang, D Panda, CJ Hung, TL Tsai, JH Jieng, CA Lin, ...
Nanoscale research letters 9 (1), 45, 2014
642014
Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
CY Huang, CY Huang, TL Tsai, CA Lin, TY Tseng
Applied Physics Letters 104 (6), 062901, 2014
642014
High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices
MH Lin, MC Wu, CY Huang, CH Lin, TY Tseng
Journal of Physics D: Applied Physics 43 (29), 295404, 2010
502010
Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory
U Chand, CY Huang, JH Jieng, WY Jang, CH Lin, TY Tseng
Applied Physics Letters 106 (15), 153502, 2015
372015
Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
U Chand, KC Huang, CY Huang, TY Tseng
IEEE Transactions on Electron Devices 62 (11), 3665-3670, 2015
352015
Compact Ga-doped ZnO nanorod thin film for making high-performance transparent resistive switching memory
CY Huang, YT Ho, CJ Hung, TY Tseng
IEEE Transactions on Electron Devices 61 (10), 3435-3441, 2014
302014
Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure
U Chand, KC Huang, CY Huang, CH Ho, CH Lin, TY Tseng
Journal of Applied Physics 117 (18), 184105, 2015
282015
Mechanism of High Temperature Retention Property (up to 200 C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer
U Chand, CY Huang, TY Tseng
IEEE Electron Device Letters 35 (10), 1019-1021, 2014
282014
Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture
U Chand, CY Huang, D Kumar, TY Tseng
Applied Physics Letters 107 (20), 203502, 2015
172015
Poly-Si nanowire nonvolatile memory with nanocrystal indium–gallium–zinc–oxide charge-trapping layer
LC Chen, YC Wu, TC Lin, JY Huang, MF Hung, JH Chen, CY Chang
IEEE electron device letters 31 (12), 1407-1409, 2010
172010
Improved resistive Switching characteristics by Al2O3 layers inclusion in HfO2-based RRAM devices
CY Huang, JH Jieng, WY Jang, CH Lin, TY Tseng
ECS Solid State Letters 2 (8), P63-P65, 2013
162013
Resistive switching characteristics of Pt/CeOx/TiN memory device
M Ismail, I Talib, CY Huang, CJ Hung, TL Tsai, JH Jieng, U Chand, CA Lin, ...
Japanese Journal of Applied Physics 53 (6), 060303, 2014
142014
Improvement of unipolar resistive switching characteristics in ti embedded ZrO2 thin film
CY Huang, U Chand, TY Tseng
Applied Mechanics and Materials 543, 3839-3842, 2014
22014
非挥发性存储器及其制造方法
TY Tseng, CY Huang, MC Wu
CN Patent CN103,378,103 B, 2016
1*2016
非揮發性記憶體及其製造方法
TY Tseng, CY Huang, MC Wu
TW Patent I533,409, 2016
2016
電阻式記憶體裝置及其製作方法
TY Tseng, CY Huang, CY Huang, TL Tsai
TW Patent I520,394, 2016
2016
記憶體元件與其製程
TY Tseng, CY Huang, JH Jiang
TW Patent I500,193, 2015
2015
电阻式存储装置及其制作方法
TY Tseng, CY Huang, CY Huang, TL Tsai
CN Patent CN104,617,218 A, 2015
2015
存储器元件与其工艺
TY Tseng, CY Huang, JH Jiang
CN Patent App. CN104,143,605 A, 2014
2014
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Articles 1–20