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Kamyar Parto
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Year
Defect and strain engineering of monolayer WSe2 enables site-controlled single-photon emission up to 150 K
K Parto, SI Azzam, K Banerjee, G Moody
Nature communications 12 (1), 3585, 2021
1582021
Ultimate monolithic-3D integration with 2D materials: rationale, prospects, and challenges
J Jiang, K Parto, W Cao, K Banerjee
IEEE Journal of the Electron Devices Society 7, 878-887, 2019
952019
Prospects and challenges of quantum emitters in 2D materials
SI Azzam, K Parto, G Moody
Applied Physics Letters 118 (24), 2021
772021
One-Dimensional Edge Contacts to Two-Dimensional Transition-Metal Dichalcogenides: Uncovering the Role of Schottky-Barrier Anisotropy in Charge Transport across Mo S 2/Metal …
K Parto, A Pal, T Chavan, K Agashiwala, CH Yeh, W Cao, K Banerjee
Physical Review Applied 15 (6), 064068, 2021
392021
Cavity-enhanced 2D material quantum emitters deterministically integrated with silicon nitride microresonators
K Parto, SI Azzam, N Lewis, SD Patel, S Umezawa, K Watanabe, ...
Nano Letters 22 (23), 9748-9756, 2022
332022
Area-selective-CVD technology enabled top-gated and scalable 2D-heterojunction transistors with dynamically tunable Schottky barrier
CH Yeh, W Cao, A Pal, K Parto, K Banerjee
2019 IEEE International Electron Devices Meeting (IEDM), 23.4. 1-23.4. 4, 2019
232019
Monolithic-3D integration with 2D materials: Toward ultimate vertically-scaled 3D-ICs
J Jiang, K Parto, W Cao, K Banerjee
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2018
162018
A mode-balanced reconfigurable logic gate built in a van der Waals strata
W Cao, JH Chu, K Parto, K Banerjee
npj 2D Materials and Applications 5 (1), 20, 2021
142021
Demonstration of CMOS-compatible multi-level graphene interconnects with metal vias
K Agashiwala, J Jiang, K Parto, D Zhang, CH Yeh, K Banerjee
IEEE Transactions on Electron Devices 68 (4), 2083-2091, 2021
132021
Purcell enhancement and polarization control of single-photon emitters in monolayer WSe2 using dielectric nanoantennas
SI Azzam, K Parto, G Moody
Nanophotonics 12 (3), 477-484, 2023
122023
Impact of transport anisotropy on the performance of van der Waals materials-based electron devices
W Cao, M Huang, CH Yeh, K Parto, K Banerjee
IEEE Transactions on Electron Devices 67 (3), 1310-1316, 2020
102020
Irradiation of Nanostrained Monolayer WSe2 for Site-Controlled Single-Photon Emission up to 150 K
K Parto, K Banerjee, G Moody
arXiv preprint arXiv:2009.07315, 2020
82020
Interfacial thermal conductivity of 2D layered materials: An atomistic approach
K Parto, A Pal, X Xie, W Cao, K Banerjee
2018 IEEE International Electron Devices Meeting (IEDM), 24.1. 1-24.1. 4, 2018
62018
Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration
K Matsuura, M Hamada, T Hamada, H Tanigawa, T Sakamoto, W Cao, ...
2019 19th International Workshop on Junction Technology (IWJT), 1-4, 2019
52019
2018 IEEE SOI‐3D‐Subthreshold Microelectronics Technology Unified Conf.(S3S)
J Jiang, K Parto, W Cao, K Banerjee
IEEE, 2018
42018
Computational study of spin injection in 2D materials
A Pal, K Parto, K Agashiwala, W Cao, K Banerjee
2019 IEEE International Electron Devices Meeting (IEDM), 24.2. 1-24.2. 4, 2019
32019
Surface Acoustic Wave Cavity Optomechanics with Atomically Thin -BN and Single-Photon Emitters
SD Patel, K Parto, M Choquer, N Lewis, S Umezawa, L Hellman, ...
PRX Quantum 5 (1), 010330, 2024
22024
Surface Acoustic Wave Cavity Optomechanics with WSe Single Photon Emitters
SD Patel, K Parto, M Choquer, S Umezawa, L Hellman, D Polishchuk, ...
arXiv preprint arXiv:2211.15811, 2022
22022
Reliability and performance of CMOS-compatible multi-level graphene interconnects incorporating vias
K Agashiwala, J Jiang, CH Yeh, K Parto, D Zhang, K Banerjee
2020 IEEE International Electron Devices Meeting (IEDM), 31.1. 1-31.1. 4, 2020
22020
Rational design of efficient defect-based quantum emitters
ME Turiansky, K Parto, G Moody, CG Van de Walle
arXiv preprint arXiv:2402.08257, 2024
12024
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