| Defect and strain engineering of monolayer WSe2 enables site-controlled single-photon emission up to 150 K K Parto, SI Azzam, K Banerjee, G Moody Nature communications 12 (1), 3585, 2021 | 92 | 2021 |
| Ultimate monolithic-3D integration with 2D materials: rationale, prospects, and challenges J Jiang, K Parto, W Cao, K Banerjee IEEE Journal of the Electron Devices Society 7, 878-887, 2019 | 80 | 2019 |
| Prospects and challenges of quantum emitters in 2D materials SI Azzam, K Parto, G Moody Applied Physics Letters 118 (24), 2021 | 44 | 2021 |
| One-Dimensional Edge Contacts to Two-Dimensional Transition-Metal Dichalcogenides: Uncovering the Role of Schottky-Barrier Anisotropy in Charge Transport across Mo S 2/Metal … K Parto, A Pal, T Chavan, K Agashiwala, CH Yeh, W Cao, K Banerjee Physical Review Applied 15 (6), 064068, 2021 | 31 | 2021 |
| Area-selective-CVD technology enabled top-gated and scalable 2D-heterojunction transistors with dynamically tunable Schottky barrier CH Yeh, W Cao, A Pal, K Parto, K Banerjee 2019 IEEE International Electron Devices Meeting (IEDM), 23.4. 1-23.4. 4, 2019 | 18 | 2019 |
| Cavity-enhanced 2D material quantum emitters deterministically integrated with silicon nitride microresonators K Parto, SI Azzam, N Lewis, SD Patel, S Umezawa, K Watanabe, ... Nano Letters 22 (23), 9748-9756, 2022 | 16 | 2022 |
| Monolithic-3D integration with 2D materials: Toward ultimate vertically-scaled 3D-ICs J Jiang, K Parto, W Cao, K Banerjee 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2018 | 14 | 2018 |
| Demonstration of CMOS-compatible multi-level graphene interconnects with metal vias K Agashiwala, J Jiang, K Parto, D Zhang, CH Yeh, K Banerjee IEEE Transactions on Electron Devices 68 (4), 2083-2091, 2021 | 11 | 2021 |
| A mode-balanced reconfigurable logic gate built in a van der Waals strata W Cao, JH Chu, K Parto, K Banerjee npj 2D Materials and Applications 5 (1), 20, 2021 | 11 | 2021 |
| Impact of transport anisotropy on the performance of van der Waals materials-based electron devices W Cao, M Huang, CH Yeh, K Parto, K Banerjee IEEE Transactions on Electron Devices 67 (3), 1310-1316, 2020 | 9 | 2020 |
| Irradiation of Nanostrained Monolayer WSe2 for Site-Controlled Single-Photon Emission up to 150 K K Parto, K Banerjee, G Moody arXiv preprint arXiv:2009.07315, 2020 | 7 | 2020 |
| Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration K Matsuura, M Hamada, T Hamada, H Tanigawa, T Sakamoto, W Cao, ... 2019 19th International Workshop on Junction Technology (IWJT), 1-4, 2019 | 5 | 2019 |
| Interfacial thermal conductivity of 2D layered materials: An atomistic approach K Parto, A Pal, X Xie, W Cao, K Banerjee 2018 IEEE International Electron Devices Meeting (IEDM), 24.1. 1-24.1. 4, 2018 | 5 | 2018 |
| 2018 IEEE SOI‐3D‐Subthreshold Microelectronics Technology Unified Conf.(S3S) J Jiang, K Parto, W Cao, K Banerjee IEEE, 2018 | 4 | 2018 |
| Purcell enhancement and polarization control of single-photon emitters in monolayer WSe2 using dielectric nanoantennas SI Azzam, K Parto, G Moody Nanophotonics 12 (3), 477-484, 2023 | 3 | 2023 |
| Reliability and performance of CMOS-compatible multi-level graphene interconnects incorporating vias K Agashiwala, J Jiang, CH Yeh, K Parto, D Zhang, K Banerjee 2020 IEEE International Electron Devices Meeting (IEDM), 31.1. 1-31.1. 4, 2020 | 2 | 2020 |
| Computational study of spin injection in 2D materials A Pal, K Parto, K Agashiwala, W Cao, K Banerjee 2019 IEEE International Electron Devices Meeting (IEDM), 24.2. 1-24.2. 4, 2019 | 2 | 2019 |
| Surface Acoustic Wave Cavity Optomechanics with WSe Single Photon Emitters SD Patel, K Parto, M Choquer, S Umezawa, L Hellman, D Polishchuk, ... arXiv preprint arXiv:2211.15811, 2022 | 1 | 2022 |
| Control of single-photon emitters in two-dimensional materials using dielectric nanoantennas SI Azzam, K Parto, G Moody CLEO: Science and Innovations, SM3H. 4, 2022 | 1 | 2022 |
| Exploration and Exploitation of Strain Engineering in 2D-FETs A Kumar, A Pal, K Parto, W Cao, K Banerjee 2023 Device Research Conference (DRC), 1-2, 2023 | | 2023 |
Kaustav BanerjeeUC Santa Barbara, Stanford University, UC BerkeleyVerified email at ece.ucsb.edu
