| Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer TT Trinh, K Ryu, K Jang, W Lee, S Baek, J Raja, J Yi Semiconductor science and technology 26 (8), 085012, 2011 | 101 | 2011 |
| Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors J Raja, K Jang, N Balaji, T Thuy Trinh, J Yi Applied Physics Letters 102 (8), 2013 | 95 | 2013 |
| Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel J Raja, K Jang, HH Nguyen, TT Trinh, W Choi, J Yi Current applied physics 13 (1), 246-251, 2013 | 74 | 2013 |
| Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors K Jang, J Raja, YJ Lee, D Kim, J Yi IEEE Electron Device Letters, 2013 | 46 | 2013 |
| Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2 Treated Al2O3 Tunneling Layer: A Cost-Effective Method J Raja, C Nguyen, C Lee, N Balaji, S Chatterjee, K Jang, H Kim, J Yi IEEE Electron Device Letters 37 (10), 1272-1275, 2016 | 40 | 2016 |
| Drain-Induced Barrier Lowering and Parasitic Resistance Induced Instabilities in Short-Channel InSnZnO TFTs J Raja, K Jang, CPT Nguyen, N Balaji, S Chatterjee, J Yi IEEE Electron Device Letters 35 (7), 756, 2014 | 40 | 2014 |
| Light trapping scheme of ICP-RIE glass texturing by SF6/Ar plasma for high haze ratio SQ Hussain, SH Ahn, H Park, G Kwon, J Raja, Y Lee, N Balaji, HS Kim, ... Vacuum 94, 87-91, 2013 | 38 | 2013 |
| Aging effects on the stability of nitrogen-doped and un-doped InGaZnO thin-film transistors J Raja, K Jang, N Balaji, SQ Hussai, S Velumani et al. Materials Science in Semiconductor Processing 37, 129-134, 2015 | 34 | 2015 |
| Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitrogen doping J Raja, K Jang, N Balaji, J Yi Semiconductor science and technology 28 (11), 115010, 2013 | 32 | 2013 |
| Surface Passivation Schemes for High-Efficiency c-Si Solar Cells-A Review N Balaji, SQ Hussain, R Park, Cheolmin Transactions on Electrical and Electronic Materials 16 (5), 227-233, 2015 | 31 | 2015 |
| Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region CPT Nguyen, J Raja, S Kim, K Jang, AHT Le, YJ Lee, J Yi Applied Surface Science 396, 1472-1477, 2017 | 28 | 2017 |
| Improvement of mobility in oxide-based thin film transistors: A brief review J Raja, K Jang, CPT Nguyen, J Yi, N Balaji, SQ Hussain, S Chatterjee Transactions on Electrical and Electronic Materials 16 (5), 234-240, 2015 | 28 | 2015 |
| Fabrication of SiO2/SiOx/SiOxNy non-volatile memory with transparent amorphous indium gallium zinc oxide channels HH Nguyen, TT Trinh, K Jang, K Baek, J Raja, J Yi Journal of The Electrochemical Society 158 (10), H1077, 2011 | 28 | 2011 |
| Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer T Thuy Trinh, D Van Nguyen, H Hanh Nguyen, J Raja, J Jang, K Jang, ... Applied Physics Letters 100 (14), 2012 | 27 | 2012 |
| Source/drain metallization effects on the specific contact resistance of indium tin zinc oxide thin film transistors CPT Nguyen, TT Trinh, J Raja, AHT Le, YJ Lee, VA Dao, J Yi Materials Science in Semiconductor Processing 39, 649-653, 2015 | 24 | 2015 |
| Bias-stability improvement using Al2O3 interfacial dielectrics in a-InSnZnO thin-film transistors K Jang, J Raja, J Kim, C Park, YJ Lee, J Yang, H Kim, J Yi Semiconductor Science and Technology 28 (8), 085015, 2013 | 22 | 2013 |
| Effects of low temperature anneal on the interface properties of thermal silicon oxide for silicon surface passivation N Balaji, C Park, S Chung, M Ju, J Raja, J Yi Journal of nanoscience and nanotechnology 16 (5), 4783-4787, 2016 | 20 | 2016 |
| Bias–stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors CPT Nguyen, TT Trinh, VA Dao, J Raja, K Jang, et al. Semiconductor Science and Technology 28 (10), 105014, 2013 | 19 | 2013 |
| Influence of SnO2: F/ZnO: Al bi-layer as a front electrode on the properties of pin amorphous silicon based thin film solar cells H Park, J Lee, H Kim, D Kim, J Raja, J Yi Applied Physics Letters 102 (19), 2013 | 19 | 2013 |
| SF6/Ar plasma textured periodic glass surface morphologies with high transmittance and haze ratio of ITO:Zr films for amorphous silicon thin film solar cells SQ Hussain, GD Kwon, S Ahn, S Kim, H Park, AH Tuan, C Shina, S Kim, ... Vacuum, 2015 | 15 | 2015 |
Dr. Shahzada Qamar HussainCOMSATS University Islamabad, Lahore CampusVerified email at cuilahore.edu.pk
