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Greg Sun
Greg Sun
APS and Optica Fellow, Professor of Engineering Department, UMass Boston
Verified email at umb.edu
Title
Cited by
Cited by
Year
High-efficiency broadband meta-hologram with polarization-controlled dual images
WT Chen, KY Yang, CM Wang, YW Huang, G Sun, ID Chiang, CY Liao, ...
Nano letters 14 (1), 225-230, 2014
8142014
Aluminum plasmonic multicolor meta-hologram
YW Huang, WT Chen, WY Tsai, PC Wu, CM Wang, G Sun, DP Tsai
Nano letters 15 (5), 3122-3127, 2015
5992015
Active dielectric metasurface based on phase‐change medium
CH Chu, ML Tseng, J Chen, PC Wu, YH Chen, HC Wang, TY Chen, ...
Laser & Photonics Reviews 10 (6), 986-994, 2016
4162016
Versatile polarization generation with an aluminum plasmonic metasurface
PC Wu, WY Tsai, WT Chen, YW Huang, TY Chen, JW Chen, CY Liao, ...
Nano letters 17 (1), 445-452, 2017
3832017
Advances in optical metasurfaces: fabrication and applications
VC Su, CH Chu, G Sun, DP Tsai
Optics express 26 (10), 13148-13182, 2018
2852018
An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ...
Applied Physics Letters 109 (17), 2016
2412016
Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ...
Applied Physics Letters 105 (15), 2014
2232014
Metalenses: advances and applications
ML Tseng, HH Hsiao, CH Chu, MK Chen, G Sun, AQ Liu, DP Tsai
Advanced Optical Materials 6 (18), 1800554, 2018
2072018
Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure mid-infrared laser
G Sun, RA Soref, HH and Cheng
Journal of Applied Physics 108, 033107, 2010
2052010
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ...
ACs Photonics 5 (3), 827-833, 2017
1942017
Electrically injected GeSn lasers on Si operating up to 100 K
Y Zhou, Y Miao, S Ojo, H Tran, G Abernathy, JM Grant, S Amoah, ...
Optica 7 (8), 924-928, 2020
1752020
Si-based GeSn photodetectors toward mid-infrared imaging applications
H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ...
ACS Photonics 6 (11), 2807-2815, 2019
1732019
Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode
G Sun, RA Soref, HH Cheng
Optics express 18 (19), 19957-19965, 2010
1702010
GeSn-based pin photodiodes with strained active layer on a Si wafer
HH Tseng, H Li, V Mashanov, YJ Yang, HH Cheng, GE Chang, RA Soref, ...
Applied Physics Letters 103 (23), 2013
1672013
In search of the elusive lossless metal
JB Khurgin, G Sun
Applied Physics Letters 96 (18), 2010
1632010
Comparative analysis of spasers, vertical-cavity surface-emitting lasers and surface-plasmon-emitting diodes
JB Khurgin, G Sun
Nature Photonics 8 (6), 468-473, 2014
1572014
Practical enhancement of photoluminescence by metal nanoparticles
G Sun, JB Khurgin, RA Soref
Applied Physics Letters 94 (10), 2009
1572009
Practicable enhancement of spontaneous emission using surface plasmons
G Sun, JB Khurgin, RA Soref
Applied physics letters 90 (11), 2007
1552007
Mid-infrared electroluminescence from a Ge/Ge0. 922Sn0. 078/Ge double heterostructure pin diode on a Si substrate
HH Tseng, KY Wu, H Li, V Mashanov, HH Cheng, G Sun, RA Soref
Applied physics letters 102 (18), 2013
1432013
Systematic study of Si-based GeSn photodiodes with 2.6 Ám detector cutoff for short-wave infrared detection
T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ...
Optics express 24 (5), 4519-4531, 2016
1422016
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