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Mikhail Nagoga
Mikhail Nagoga
Leman Micro Devices
Verified email at leman-micro.com
Title
Cited by
Cited by
Year
Bipolar reading technique for a memory cell having an electrically floating body transistor
S Okhonin, M Nagoga
US Patent 7,301,803, 2007
5662007
New generation of Z-RAM
S Okhonin, M Nagoga, E Carman, R Beffa, E Faraoni
2007 IEEE International Electron Devices Meeting, 925-928, 2007
3792007
Memory cell having an electrically floating body transistor and programming technique therefor
S Okhonin, M Nagoga
US Patent 7,476,939, 2009
3562009
Single transistor memory cell
S Okhonin, M Nagoga
US Patent 8,014,195, 2011
3462011
A capacitor-less 1T-DRAM cell
S Okhonin, M Nagoga, JM Sallese, P Fazan
IEEE Electron Device Letters 23 (2), 85-87, 2002
2992002
A SOI capacitor-less 1T-DRAM concept
S Okhonin, M Nagoga, JM Sallese, P Fazan
2001 IEEE International SOI Conference. Proceedings (Cat. No. 01CH37207 …, 2001
2582001
Method for reading a memory cell having an electrically floating body transistor, and memory cell and array implementing same
S Okhonin, M Nagoga
US Patent App. 11/453,594, 2007
1562007
Circuitry for and method of improving statistical distribution of integrated circuits
S Okhonin, M Nagoga
US Patent 7,251,164, 2007
1302007
Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
S Okhonin, M Nagoga
US Patent 7,606,066, 2009
1212009
Reading technique for memory cell with electrically floating body transistor
S Okhonin, M Nagoga, C Bassin
US Patent 8,085,594, 2011
632011
Capacitor-less 1-transistor DRAM
Fazan, Okhonin, Nagoga, Sallese, Portmann, Ferrant, Kayal, Pastre, ...
2002 IEEE International SOI Conference, 10-13, 2002
582002
A simple 1-transistor capacitor-less memory cell for high performance embedded DRAMs
PC Fazan, S Okhonin, M Nagoga, JM Sallese
Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No …, 2002
472002
Principles of transient charge pumping on partially depleted SOI MOSFETs
S Okhonin, M Nagoga, P Fazan
IEEE Electron Device Letters 23 (5), 279-281, 2002
452002
Ultra-scaled Z-RAM cell
S Okhonin, M Nagoga, CW Lee, JP Colinge, A Afzalian, R Yan, ...
2008 IEEE International SOI Conference, 157-158, 2008
382008
Techniques for providing a semiconductor memory device
S Okhonin, VI Koldiaev, M Nagoga, Y Luthra
US Patent 8,537,610, 2013
312013
Highly scalable Z-RAM with remarkably long data retention for DRAM application
TS Jang, JS Kim, SM Hwang, YH Oh, KM Rho, SJ Chung, SO Chung, ...
2009 Symposium on VLSI Technology, 234-235, 2009
222009
Retention characteristics of zero-capacitor RAM (Z-RAM) cell based on FinFET and tri-gate devices
C Bassin, P Fazan, W Xiong, CR Cleavelin, T Schulz, K Schruefer, ...
2005 IEEE International SOI Conference Proceedings, 203-204, 2005
192005
Refreshing data of memory cells with electrically floating body transistors
E Carman, M Nagoga, S Okhonin
US Patent 8,194,487, 2012
172012
SOI capacitor-less 1-transistor DRAM sensing scheme with automatic reference generation
M Blagojevic, M Pastre, M Kayal, P Fazan, S Okhonin, M Nagoga, ...
2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No …, 2004
142004
A leakage current model for SOI based floating body memory that includes the Poole-Frenkel effect
A Nayfeh, V Koldyaev, P Beaud, M Nagoga, S Okhonin
2008 IEEE International SOI Conference, 75-76, 2008
102008
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