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Seoung-Hwan Park
Seoung-Hwan Park
Professor of Electronics Engineering, Catholic University of Daegu
Verified email at cu.ac.kr
Title
Cited by
Cited by
Year
Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors
SH Park, SL Chuang
Physical Review B 59 (7), 4725, 1999
4021999
Theory and experiment of In Ga As P and In Ga Al As long-wavelength strained quantum-well lasers
J Minch, SH Park, T Keating, SL Chuang
IEEE J. Quantum Electron 35 (5), 771-782, 1999
3001999
Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects
SH Park, SL Chuang
Journal of Applied Physics 87 (1), 353-364, 2000
2932000
Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers
SH Park, SL Chuang
Applied Physics Letters 72 (24), 3103-3105, 1998
2481998
Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment
SH Park, SL Chuang
Applied Physics Letters 76 (15), 1981-1983, 2000
2172000
Large-area OLED lightings and their applications
JW Park, DC Shin, SH Park
Semiconductor Science and Technology 26 (3), 034002, 2011
1862011
Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells
SH Park
Journal of applied physics 91 (12), 9904-9908, 2002
1802002
Intraband relaxation time effects on non-Markovian gain with many-body effects and comparison with experiment
SH Park, SL Chuang, J Minch, D Ahn
Semiconductor science and technology 15 (2), 203, 2000
1522000
Spontaneous and piezoelectric polarization effects in wurtzite ZnO∕ MgZnO quantum well lasers
SH Park, D Ahn
Applied Physics Letters 87 (25), 2005
1462005
Electronic and Optical Properties of - and -Plane Wurtzite InGaN–GaN Quantum Wells
SH Park, D Ahn, SL Chuang
IEEE Journal of Quantum Electronics 43 (12), 1175-1182, 2007
1392007
Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach
G Liu, SL Chuang, SH Park
Journal of Applied Physics 88 (10), 5554-5561, 2000
1312000
High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes
SH Park, D Ahn, JW Kim
Applied Physics Letters 94 (4), 2009
1022009
Optical gain in InGaN∕ GaN quantum well structures with embedded AlGaN δ layer
SH Park, J Park, E Yoon
Applied physics letters 90 (2), 2007
1022007
Crystal orientation effects on electronic properties of wurtzite GaN/AlGaN quantum wells with spontaneous and piezoelectric polarization
SH Park
Japanese Journal of Applied Physics 39 (6R), 3478, 2000
862000
Many-body optical gain of wurtzite GaN-based quantum-well lasers and comparison with experiment
SH Park, SL Chuang
Applied physics letters 72 (3), 287-289, 1998
851998
Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells
J Kim, YH Cho, DS Ko, XS Li, JY Won, E Lee, SH Park, JY Kim, S Kim
Optics express 22 (103), A857-A866, 2014
802014
Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency
SH Park, D Ahn, BH Koo, JW Kim
Applied Physics Letters 95 (6), 2009
752009
Depolarization effects in (112 2)-oriented InGaN∕ GaN quantum well structures
SH Park, D Ahn
Applied physics letters 90 (1), 2007
662007
Crystal orientation effects on many-body optical gain of wurtzite InGaN/GaN quantum well lasers
SH Park
Japanese journal of applied physics 42 (2B), L170, 2003
592003
Optical gain in InGaN∕ InGaAlN quantum well structures with zero internal field
SH Park, D Ahn, JW Kim
Applied Physics Letters 92 (17), 2008
552008
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