Follow
Dhanoop Varghese
Dhanoop Varghese
Verified email at ti.com
Title
Cited by
Cited by
Year
Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation
AE Islam, H Kufluoglu, D Varghese, S Mahapatra, MA Alam
IEEE Transactions on Electron Devices 54 (9), 2143-2154, 2007
391*2007
A comprehensive model for PMOS NBTI degradation: Recent progress
MA Alam, H Kufluoglu, D Varghese, S Mahapatra
Microelectronics Reliability 47 (6), 853-862, 2007
3802007
On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress
S Mahapatra, D Saha, D Varghese, PB Kumar
IEEE Transactions on Electron Devices 53 (7), 1583-1592, 2006
2262006
On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping …
S Mahapatra, K Ahmed, D Varghese, AE Islam, G Gupta, L Madhav, ...
2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007
1492007
On the dispersive versus Arrhenius temperature activation of NBTI time evolution in plasma nitrided gate oxides: Measurements, theory, and implications
D Varghese, D Saha, S Mahapatra, K Ahmed, F Nouri, M Alam
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
1412005
off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown
D Varghese, H Kufluoglu, V Reddy, H Shichijo, D Mosher, S Krishnan, ...
IEEE Transactions on Electron Devices 54 (10), 2669-2678, 2007
792007
Negative bias temperature instability in CMOS devices
S Mahapatra, MA Alam, PB Kumar, TR Dalei, D Varghese, D Saha
Microelectronic engineering 80, 114-121, 2005
722005
Hole energy dependent interface trap generation in MOSFET Si/SiO/sub 2/interface
D Varghese, S Mahapatra, MA Alam
IEEE electron device letters 26 (8), 572-574, 2005
672005
ON-state hot carrier degradation in drain-extended NMOS transistors
D Varghese, P Moens, MA Alam
IEEE transactions on electron devices 57 (10), 2704-2710, 2010
462010
A generalized, IB-independent, physical HCI lifetime projection methodology based on universality of hot-carrier degradation
D Varghese, MA Alam, B Weir
2010 IEEE International Reliability Physics Symposium, 1091-1094, 2010
432010
Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of time-zero delay for on-the-fly measurements
AE Islam, H Kufluoglu, D Varghese, MA Alam
Applied Physics Letters 90 (8), 2007
432007
Multi-probe interface characterization of In0.65Ga0.35As/Al2O3 MOSFET
D Varghese, Y Xuan, YQ Wu, T Shen, PD Ye, MA Alam
2008 IEEE International Electron Devices Meeting, 1-4, 2008
392008
Theory of breakdown position determination by voltage-and current-ratio methods
MA Alam, D Varghese, B Kaczer
IEEE Transactions on Electron Devices 55 (11), 3150-3158, 2008
372008
Role of anode hole injection and valence band hole tunneling on interface trap generation during hot carrier injection stress
D Saha, D Varghese, S Mahapatra
IEEE electron device letters 27 (7), 585-587, 2006
282006
OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review
D Varghese, V Reddy, S Krishnan, MA Alam
Microelectronics Reliability 54 (8), 1477-1488, 2014
262014
Universality of off-state degradation in drain extended NMOS transistors
D Varghese, H Kufluoglu, V Reddy, H Shichijo, S Krishnan, MA Alam
2006 International Electron Devices Meeting, 1-4, 2006
262006
The origin of broad distribution of breakdown times in polycrystalline thin film dielectrics
M Masuduzzaman, S Xie, J Chung, D Varghese, J Rodriguez, S Krishnan, ...
Applied Physics Letters 101 (15), 2012
242012
Towards a universal model for hot carrier degradation in DMOS transistors
P Moens, D Varghese, M Alam
2010 22nd International Symposium on Power Semiconductor Devices & IC's …, 2010
242010
A comprehensive analysis of off-state stress in drain extended PMOS transistors: Theory and characterization of parametric degradation and dielectric failure
D Varghese, V Reddy, H Shichijo, D Mosher, S Krishnan, MA Alam
2008 IEEE International Reliability Physics Symposium, 566-574, 2008
242008
The role of dielectric heating and effects of ambient humidity in the electrical breakdown of polymer dielectrics
S Palit, D Varghese, H Guo, S Krishnan, MA Alam
IEEE Transactions on Device and Materials Reliability 15 (3), 308-318, 2015
192015
The system can't perform the operation now. Try again later.
Articles 1–20