Chinmay Kumar Maiti
Chinmay Kumar Maiti
Professor, Dept of ECE, ITER, SOA University, Bhubaneswar
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Cited by
Strained-Si heterostructure field effect transistors
CK Maiti, LK Bera, S Chattopadhyay
Semiconductor science and technology 13 (11), 1225, 1998
A Natural Silk Fibroin Protein‐Based Transparent Bio‐Memristor
MK Hota, MK Bera, B Kundu, SC Kundu, CK Maiti
Advanced Functional Materials 22 (21), 4493-4499, 2012
Applications of silicon-germanium heterostructure devices
CK Maiti, GA Armstrong
CRC Press, 2001
Strained silicon heterostructures: materials and devices
CK Maiti, SK Ray, NB Chakrabarti
IET, 2001
Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate
SK Ray, CK Maiti, SK Lahiri, NB Chakrabarti
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992
Strained-Si heterostructure field effect devices
CK Maiti, S Chattopadhyay, LK Bera
CRC Press, 2007
Hole mobility enhancement in strained-Si p-MOSFETs under high vertical field
CK Maiti, LK Bera, SS Dey, DK Nayak, NB Chakrabarti
Solid-State Electronics 41 (12), 1863-1869, 1997
Current conduction mechanism in TiO2 gate dielectrics
S Chakraborty, MK Bera, S Bhattacharya, CK Maiti
Microelectronic Engineering 81 (2-4), 188-193, 2005
TEOS‐based PECVD of silicon dioxide for VLSI applications
SK Ray, CK Maiti, SK Lahiri, NB Chakrabarti
Advanced materials for optics and electronics 6 (2), 73-82, 1996
Electrical properties of oxides grown on strained SiGe layer at low temperatures in a microwave oxygen plasma
M Mukhopadhyay, SK Ray, CK Maiti, DK Nayak, Y Shiraki
Applied physics letters 65 (7), 895-897, 1994
Electrical characterization of TiO2 gate oxides on strained-Si
CK Maiti, SK Samanta, GK Dalapati, SK Nandi, S Chatterjee
Microelectronic engineering 72 (1-4), 253-256, 2004
Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO2 as a gate dielectric
SK Nandi, S Chakraborty, MK Bera, CK Maiti
Bulletin of Materials Science 30 (3), 247-254, 2007
Effect of reactive‐ion bombardment on the properties of silicon nitride and oxynitride films deposited by ion‐beam sputtering
SK Ray, S Das, CK Maiti, SK Lahiri, NB Chakraborti
Journal of applied physics 75 (12), 8145-8152, 1994
Leakage current characteristics and the energy band diagram of Al/ZrO2/Si0. 3Ge0. 7 hetero-MIS structures
S Chakraborty, MK Bera, GK Dalapati, D Paramanik, S Varma, PK Bose, ...
Semiconductor science and technology 21 (4), 467, 2006
Properties of SiGe oxides grown in a microwave oxygen plasma
M Mukhopadhyay, SK Ray, CK Maiti, DK Nayak, Y Shiraki
Journal of applied physics 78 (10), 6135-6140, 1995
Strained-Si channel heterojunction p-MOSFETs
GA Armstrong, CK Maiti
solid-state electronics 42 (4), 487-498, 1998
Characterization of Y2O3 gate dielectric on n-GaAs substrates
PS Das, GK Dalapati, DZ Chi, A Biswas, CK Maiti
Applied surface science 256 (7), 2245-2251, 2010
High frequency characterization and continuum modeling of ultrathin high-k (ZrO2) gate dielectrics on strained-Si
MK Bera, S Chakraborty, S Saha, D Paramanik, S Varma, S Bhattacharya, ...
Thin Solid Films 504 (1-2), 183-187, 2006
Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si
CK Maiti, GK Dalapati, S Chatterjee, SK Samanta, S Varma, S Patil
Solid-state electronics 48 (12), 2235-2241, 2004
TiO2/GeOxNy stacked gate dielectrics for Ge-MOSFETs
MK Bera, C Mahata, AK Chakraborty, SK Nandi, JN Tiwari, JY Hung, ...
Semiconductor science and technology 22 (12), 1352, 2007
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