| Microscopic uniformity in plasma etching RA Gottscho, CW Jurgensen, DJ Vitkavage Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992 | 845 | 1992 |
| Overview of atomic layer etching in the semiconductor industry KJ Kanarik, T Lill, EA Hudson, S Sriraman, S Tan, J Marks, V Vahedi, ... Journal of Vacuum Science & Technology A 33 (2), 2015 | 629 | 2015 |
| Systems, methods and apparatus for choked flow element extraction A Shajii, R Gottscho, S Benzerrouk, A Cowe, SP Nagarkatti, WR Entley US Patent 9,449,793, 2016 | 527 | 2016 |
| Semiconductor processing system having multiple decoupled plasma sources JP Holland, PLG Ventzek, H Singh, R Gottscho US Patent 8,900,402, 2014 | 485 | 2014 |
| The gaseous electronics conference radio‐frequency reference cell: a defined parallel‐plate radio‐frequency system for experimental and theoretical studies of plasma‐processing … PJ Hargis Jr, KE Greenberg, PA Miller, JB Gerardo, JR Torczynski, ... Review of Scientific Instruments 65 (1), 140-154, 1994 | 471 | 1994 |
| Switched uniformity control RA Gottscho, RJ Steger US Patent 7,282,454, 2007 | 341 | 2007 |
| Vacuum-integrated hardmask processes and apparatus J Marks, GA Antonelli, RA Gottscho, DM Hausmann, A Lavoie, TJ Knisley, ... US Patent 9,778,561, 2017 | 327 | 2017 |
| Negative ion kinetics in RF glow discharges RA Gottscho, CE Gaebe IEEE transactions on plasma science 14 (2), 92-102, 1986 | 242 | 1986 |
| Optical techniques in plasma diagnostics RA Gottscho, TA Miller Pure and Applied Chemistry 56 (2), 189-208, 1984 | 237 | 1984 |
| Glow-discharge sheath electric fields: Negative-ion, power, and frequency effects RA Gottscho Physical Review A 36 (5), 2233, 1987 | 209 | 1987 |
| The grand challenges of plasma etching: a manufacturing perspective CGN Lee, KJ Kanarik, RA Gottscho Journal of Physics D: Applied Physics 47 (27), 273001, 2014 | 208 | 2014 |
| Sensitive, Nonintrusive, In-Situ Measurement of Temporally and Spatially Resolved Plasma Electric Fields CA Moore, GP Davis, RA Gottscho Physical review letters 52 (7), 538, 1984 | 203 | 1984 |
| Optical emission actinometry and spectral line shapes in rf glow discharges RA Gottscho, VM Donnelly Journal of applied physics 56 (2), 245-250, 1984 | 196 | 1984 |
| Atomic layer etching: rethinking the art of etch KJ Kanarik, S Tan, RA Gottscho The journal of physical chemistry letters 9 (16), 4814-4821, 2018 | 184 | 2018 |
| Design of high-density plasma sources for materials processing MA Lieberman, RA Gottscho Physics of Thin Films 18, 1-119, 1994 | 183 | 1994 |
| Integrated liquid crystal display and digitizer having a black matrix layer adapted for sensing screen touch location RA Boie, RA Gottscho, AR Kmetz, RH Krukar, PY Lu, JR Morris Jr US Patent 5,847,690, 1998 | 168 | 1998 |
| Measurement of spatially resolved gas‐phase plasma temperatures by optical emission and laser‐induced fluorescence spectroscopy GP Davis, RA Gottscho Journal of Applied Physics 54 (6), 3080-3086, 1983 | 159 | 1983 |
| Ion transport in an electron cyclotron resonance plasma N Sadeghi, T Nakano, DJ Trevor, RA Gottscho Journal of applied physics 70 (5), 2552-2569, 1991 | 158 | 1991 |
| Ion dynamics of rf plasmas and plasma sheaths: A time‐resolved spectroscopic study RA Gottscho, RH Burton, DL Flamm, VM Donnelly, GP Davis Journal of applied physics 55 (7), 2707-2714, 1984 | 120 | 1984 |
| Ion and neutral temperatures in electron cyclotron resonance plasma reactors T Nakano, N Sadeghi, RA Gottscho Applied physics letters 58 (5), 458-460, 1991 | 117 | 1991 |
