| Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing … S Chakrabarti, S Ginnaram, S Jana, ZY Wu, K Singh, A Roy, P Kumar, ... Scientific Reports 7 (1), 4735, 2017 | 53 | 2017 |
| Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure S Chakrabarti, S Samanta, S Maikap, SZ Rahaman, HM Cheng Nanoscale research letters 11, 1-8, 2016 | 47 | 2016 |
| Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection S Samanta, SZ Rahaman, A Roy, S Jana, S Chakrabarti, R Panja, S Roy, ... Scientific Reports 7 (1), 11240, 2017 | 36 | 2017 |
| Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure S Chakrabarti, R Panja, S Roy, A Roy, S Samanta, M Dutta, S Ginnaram, ... Applied Surface Science 433, 51-59, 2018 | 30 | 2018 |
| Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO2-Based Resistive Random Access Memory … DJJ Loy, PA Dananjaya, S Chakrabarti, KH Tan, SCW Chow, EH Toh, ... ACS Applied Electronic Materials 2 (10), 3160-3170, 2020 | 28 | 2020 |
| Scalable cross-point resistive switching memory and mechanism through an understanding of H 2 O 2/glucose sensing using an IrO x/Al 2 O 3/W structure S Chakrabarti, S Maikap, S Samanta, S Jana, A Roy, JT Qiu Physical Chemistry Chemical Physics 19 (38), 25938-25948, 2017 | 24 | 2017 |
| Cross-point resistive switching memory and urea sensing by using annealed GdOx film in IrOx/GdOx/W structure for biomedical applications P Kumar, S Maikap, S Ginnaram, JT Qiu, D Jana, S Chakrabarti, ... Journal of The Electrochemical Society 164 (4), B127, 2017 | 20 | 2017 |
| Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode S Roy, A Roy, R Panja, S Samanta, S Chakrabarti, PL Yu, S Maikap, ... Journal of alloys and compounds 726, 30-40, 2017 | 16 | 2017 |
| Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure D Jana, S Chakrabarti, SZ Rahaman, S Maikap Nanoscale research letters 10, 1-8, 2015 | 12 | 2015 |
| Impact of AlOx interfacial layer and switching mechanism in W/AlOx/TaOx/TiN RRAMs S Chakrabarti, D Jana, M Dutta, S Maikap, YY Chen, JR Yang 2014 IEEE 6th International Memory Workshop (IMW), 1-4, 2014 | 9 | 2014 |
| Effects of Thermal Annealing on Ta2O5 based CMOS compatible RRAM S Chakrabarti, JM Ang, JR Thong, K Hou, MY Chee, PA Dananjaya, ... 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 79-80, 2020 | 3 | 2020 |
| Bulk-limited Effect in Gradual Conductance Switching Behaviour of HfOx-based Memristive Devices for Analog Synaptic Device Applications PA Dananjaya, DLJ Jun, MY Chee, SCC Wai, JM Ang, K Hou, JR Thong, ... 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 87-88, 2020 | | 2020 |
| Impact of Stopping Voltage and Hopping Conduction on the Oxygen Vacancy Concentration of Multi-Level HfO2-Based Resistive Switching Devices DJJ Loy, PA Dananjaya, S Chakrabarti, KH Tan, SCW Chow, MY Chee, ... 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 91-92, 2020 | | 2020 |
| Al2O3 based resistive random access memory for H2O2/glucose sensing S Maikap, S Chakrabarti | | |
| Highly uniform and robust retention under 30 µA current operation by inserting ultrathin Al2O3 layer in TaOx-based RRAM S Samanta, D Jana, S Chakrabarti, M Dutta, S Roy, R Mahapatra, ... | | |
| Fabrication and characterization of vertical 20 nm RRAM using novel Ir (20 nm)/AlOx/W cross-point architecture D Jana, A Prakash, S Chakrabarti, S Maikap | | |
Siddheswar MaikapProfessor of Electronics Engineering, Chang Gung UniversityVerified email at mail.cgu.edu.tw
